Abstract: In a nitride semiconductor light-emitting device, a nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer are successively stacked on an n-type nitride semiconductor layer. In a semiconductor light-emitting device, a first lower layer, a second lower layer, an active layer, and an upper layer having a thickness not greater than 40 nm are successively stacked on a substrate, and an interface of a second electrode for n-type in contact with the upper layer includes a metal of which a surface plasmon can be excited by light generated from the active layer.

Abstract: A nitride semiconductor laser device has a semiconductor multi-layer structure that includes a lower clad layer of a first conductive type, an active layer, and an upper clad layer of a second conductive type stacked in this order on a substrate, wherein a layer under the active layer includes a stripe-like trench; the semiconductor multi-layer structure includes a stripe-like optical cavity arranged along the stripe-like trench; the stripe-like trench has a narrower width in its both end regions compared to its central main region; and the active layer is formed of a nitride semiconductor containing In.

Abstract: A nitride semiconductor laser device has a semiconductor multi-layer structure that includes a lower clad layer of a first conductive type, an active layer, and an upper clad layer of a second conductive type stacked in this order on a substrate, wherein a layer under the active layer includes a stripe-like trench; the semiconductor multi-layer structure includes a stripe-like optical cavity arranged along the stripe-like trench; the stripe-like trench has a narrower width in its both end regions compared to its central main region; and the active layer is formed of a nitride semiconductor containing In.

Abstract: An all optics type semiconductor image storage apparatus includes a superlative semiconductor device. The superlattice semiconductor device includes a superlattice layer which is formed by alternately laminating a barrier layer and a quantum well layer. The superlattice layer is interposed between two carrier confinement layers, one of which is formed on a surface of a semiconductor substrate. The superlattice semiconductor device has an effect of modulating a light absorbance in the vicinity of an absorption edge by canceling an internal electric field generated by a piezoelectric effect. This piezoelectric effect is due to a distortion occurring when the superlattice layer is formed. An image is stored so that, light incident into the superlattice semiconductor device at a first stable point is substantially transmitted, while light incident into the device at a second stable point is prevented from being substantially transmitted.