Patents by Inventor Pai-Yu Chang

Pai-Yu Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8557688
    Abstract: A method for fabricating a P-type polycrystalline silicon-germanium structure comprises steps: forming an aluminum layer and an amorphous germanium layer on a P-type monocrystalline silicon substrate in sequence; annealing the P-type monocrystalline silicon substrate, the aluminum layer and the amorphous germanium layer at a temperature of 400-650° C.; and undertaking an aluminum-induced crystallization process in which germanium atoms of the amorphous germanium layer and silicon atoms of the P-type monocrystalline silicon substrate simultaneously pass through the aluminum layer and then the amorphous germanium layer being induced and converted into a P-type polycrystalline silicon-germanium layer between the P-type monocrystalline silicon substrate and the aluminum layer. The present invention is a simple, reliable and low-cost method to fabricate a P-type polycrystalline silicon-germanium layer on a P-type monocrystalline silicon substrate.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: October 15, 2013
    Assignee: National Yunlin University of Science and Technology
    Inventors: Jian-Yang Lin, Pai-Yu Chang
  • Publication number: 20110132456
    Abstract: The present invention discloses a solar cell integrating monocrystalline silicon and a SiGe film, which comprises an N-type amorphous silicon-germanium (SiGe) film formed on a P-type monocrystalline silicon substrate. The P-type monocrystalline silicon substrate has a roughened surface to capture sunlight. A transparent conductive layer is stacked on the N-type amorphous SiGe film. Metal electrodes are formed on the transparent conductive layer and penetrate the transparent conductive layer to contact the N-type amorphous SiGe film. A P-type polycrystalline SiGe film is formed on the backside of the P-type monocrystalline silicon substrate. A back surface field is arranged below the P-type polycrystalline SiGe film to prevent from the recombination of major carriers. A backside metal electrode layer is arranged below the back surface field to function as a backside electrode and decrease the contact resistance. Thereby, the present invention can effectively promote the absorption rate of solar energy.
    Type: Application
    Filed: December 7, 2009
    Publication date: June 9, 2011
    Inventors: Jian-Yang LIN, Pai-Yu Chang, Tsong-Hsueh Wu
  • Patent number: 6048290
    Abstract: A baby walker includes a lower support column swivelably mounted on a base, a curved support bar including a mediate portion secured to the lower support column, two wheels each rotatably mounted on a respective end portion of the curved bar, an upper support column adjustably secured to the lower support column, a top shelf secured to the upper end portion of the upper support column and containing a through hole in the mediate portion thereof, and a seat assembly swivelably mounted in the through hole.
    Type: Grant
    Filed: November 16, 1998
    Date of Patent: April 11, 2000
    Assignee: Link Treasure Limited
    Inventors: Er-Jui Chen, Pai-Yu Chang