Abstract: Ginkgo leaves contain many beneficial chemicals which can be transferred into a preparation of tea. However, the leaves contain 2-hexenal, a chemical which is toxic and has an unpleasant taste. Therefore, removal of the 2-hexenal is an essential step for the tea production. This removal is accomplished in this invention by a microwave apparatus, which has the advantage of a rapid rate of treatment at great energy efficiency. Therefore, this invention provides an effective means for large scale ginkgo leaf tea production.

Abstract: Ginkgo leaves contain many beneficial chemicals which can be transferred into a preparation of tea. However, the leaves contain 2-hexenal, a chemical which is toxic and has an unpleasant taste. Therefore, removal of the 2-hexenal is an essential step for the tea production. This removal is accomplished in this invention by a microwave apparatus, which has the advantage of a rapid rate of treatment at great energy efficiency. Therefore, this invention provides an effective means for large scale ginkgo leaf tea production.

Abstract: A method to grow diamond crystal by an utilization of liquid template on which carbon precursor is deposited. The liquid template is to replace the conventional solid template to improve the quality and the size of the diamond crystal through the inherent property of the liquid. Its ideal smoothness, its amorphosity and therefore, an absence of the grain boundary, and its high surface mobility for carbon aggregation to form diamond crystal, thus to grow diamond crystal.

Abstract: A method for growing diamond crystals or films by diffusing carbon through one side of a carbon diffusable substrate, such as metal or alloy, and outdiffusing the carbon on opposite side of the substrate is disclosed. The requirements for the metal or the alloy medium are: (1) low solubility of carbon in the medium so that all carbon will not be trapped in the medium; (2) no stable compound is formed between carbon and the medium in the operating temperature region; (3) a proximity to the lattice constant of diamond; and (4) an adequate diffusion rate at the operating temperature to grow the diamond efficiently.

Abstract: A method and apparatus for the production of a form of carbon nitride with a chemical formula consisting of 3 carbon atoms and 4 nitrogen atoms, and a structure similar to that of beta-silicon nitride. The apparatus utilizes a nitrogen ion beam and a carbon arc. The interaction between the ionized nitrogen and the carbon evoluted in the arc produces copious compounds of carbon and nitrogn. Enrichment of the proportion of the specific carbon-nitrogen compound is achieved by adjustment of the operational parameters of the apparatus. A pure form of this compound is produced by an electric and/or magnetic field separator.

Abstract: A method and apparatus for producing thin film silicon solar cells by the deposition of successive passivation and silicon layers in a vacuum of low 10.sup.-4 to high 10.sup.-5 torr is disclosed. The method utilizes three principal sources: a semiconductor, gaseous ion and dopant. Evaporation at low vacuum is achieved by heating solid silicon indirectly in a crucible of refractory material or directly in a crucible of conductive material. Alternatively, the solid silicon can be heated indirectly with rf power. The gaseous plasma and dopant(s) are provided from suitable sources. The result is the deposition of semiconductor material and dopant in the presence of a gaseous plasma at low vacuum. The plasma eliminates contamination from the low vacuum.

Abstract: For electronic devices such as solar cells, the substrate is an integral part of the device. The present invention employs metallic glass as the substrate for semiconductor devices. The metallic glass substrate is both morphologically amorphous and electrically conductive. The use of such a substrate permits a morphologically amorphous semiconductor material to be deposited on a morphologically amorphous and electrically conductive substrate. The metallic glass substrate can also be used in other forms of semiconductor devices whose morphological nature does not affect the device processing and the device performance. Thus, either morphologically amorphous or crystalline semiconductor materials can be deposited on the metallic glass substrate to form electronic devices.