Patents by Inventor Paola Besana

Paola Besana has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Increasing adherence of dielectrics to phase change materials
    Patent number: 7470922
    Abstract: A phase change material is formed over a dielectric material. An impurity is introduced into the dielectric to improve the adherence of said dielectric to said phase change material.
    Type: Grant
    Filed: November 21, 2007
    Date of Patent: December 30, 2008
    Assignee: Ovonyx, Inc.
    Inventors: Paola Besana, Tina Marangon, Amos Galbiati
  • Increasing adherence of dielectrics to phase change materials
    Publication number: 20080067485
    Abstract: A phase change material is formed over a dielectric material. An impurity is introduced into the dielectric to improve the adherence of said dielectric to said phase change material.
    Type: Application
    Filed: November 21, 2007
    Publication date: March 20, 2008
    Inventors: Paola Besana, Tina Marangon, Amos Galbiati
  • Increasing adherence of dielectrics to phase change materials
    Patent number: 7338857
    Abstract: A phase change material is formed over a dielectric material. An impurity is introduced into the dielectric to improve the adherence of said dielectric to said phase change material.
    Type: Grant
    Filed: October 14, 2004
    Date of Patent: March 4, 2008
    Assignee: Ovonyx, Inc.
    Inventors: Paola Besana, Tina Marangon, Amos Galbiati
  • Phase change memory device having an adhesion layer and manufacturing process thereof
    Publication number: 20060278900
    Abstract: A memory includes a phase change memory element having a memory layer of a calcogenide material and a glue layer of an alloy of the form TiaXbNc where X is selected in the group comprising silicon, aluminum, carbon, or boron, and c may be 0. The nitrogen and silicon are adapted to reduce the diffusion of titanium toward the chalcogenide layer.
    Type: Application
    Filed: December 19, 2005
    Publication date: December 14, 2006
    Applicant: STMicroelectronics S.r.I.
    Inventors: Kuo-Wei Chang, Jong-Won Lee, Paola Besana
  • Process for physical vapor deposition of a chalcogenide material layer and chamber for physical vapor deposition of a chalcogenide material layer of a phase change memory device
    Publication number: 20060249369
    Abstract: A method for depositing a chalcogenide layer in a phase change memory, whereby a chalcogenide layer is deposited by physical vapor deposition in a deposition chamber, having a collimator. The collimator is formed by a holed disk arranged in a deposition area delimited by the chamber walls and the chamber cover. The target is biased by a pulsed voltage to avoid charging and arching. The method is used to manufacture a phase change memory cell, whereby a resistive heater element is formed in a dielectric layer, a mold layer is formed over the dielectric layer; an aperture is formed in the mold layer over the resistive heater element; a chalcogenide layer is conformally deposited in the aperture to define a phase change portion; and a select element is formed in electrical contact with the phase change portion.
    Type: Application
    Filed: April 5, 2006
    Publication date: November 9, 2006
    Applicant: STMicroelectronics S.r.l.
    Inventors: Maria Marangon, Paola Besana, Raimondo Cecchini, Mauro Tresoldi
  • Increasing adherence of dielectrics to phase change materials
    Publication number: 20060084227
    Abstract: A phase change material is formed over a dielectric material. An impurity is introduced into the dielectric to improve the adherence of said dielectric to said phase change material.
    Type: Application
    Filed: October 14, 2004
    Publication date: April 20, 2006
    Inventors: Paola Besana, Tina Marangon, Amos Galbiati