Abstract: A variety of applications can include systems and methods that control a memory size of a changelog in a storage device, where the changelog is implemented to correlate virtual page addresses to physical addresses in one or more memory devices. The memory size can be controlled by an allocation schema for a scalable memory area for the changelog in the storage device. The allocation schema can include using bitmaps, lists linked to the bitmaps, and a counter to count bits asserted in the bitmaps such that the allocation of memory space in the storage device can depend on usage rather than allocating a large memory space for all possible correlations of virtual page addresses to physical addresses.

Abstract: Disclosed in some examples are improvements to data placement architectures in NAND that provide additional data protection through an improved NAND data placement schema that allows for recovery from certain failure scenarios. The present disclosure stripes data diagonally across page lines and planes to enhance the data protection. Parity bits are stored in SLC blocks for extra protection until the block is finished writing and then the parity bits may be deleted.

Abstract: Disclosed in some examples are improvements to data placement architectures in NAND that provide additional data protection through an improved NAND data placement schema that allows for recovery from certain failure scenarios. The present disclosure stripes data diagonally across page lines and planes to enhance the data protection. Parity bits are stored in SLC blocks for extra protection until the block is finished writing and then the parity bits may be deleted.

Abstract: Methods, systems, and devices for adaptive block mapping are described. In some examples, a first superblock and a second superblock may be established across one or more dice of a memory device. The superblocks may each include one or more blocks from a plurality of planes of a memory die. In some examples, the second superblock may include at least one bad block (e.g., defective block) in addition to one or more good blocks (e.g., non-defective blocks). The memory device may receive a command for writing data in a first mode and may write a first subset of the data to the first superblock in the first mode, a second subset of the data to the second superblock in the first mode, and one or more blocks associated with the second superblock in a second mode. Additionally or alternatively, the memory device may receive a second command for writing data in the second mode and may write the data to the first superblock in the first mode.

Abstract: Methods, systems, and devices for dynamic wear leveling techniques are described. A memory system may determine a type of data associated with data to be written to a block of the memory system. The memory system may determine the type of data based on a value of a counter associated with a segment of a mapping of the memory system that includes a logical address of the data. Additionally, or alternatively, the memory system may determine the type of data based on determining a quantity of invalid data in a set of recently selected (e.g., opened) blocks of the memory system. The memory system may select the block for storing the data based on the type of data and a quantity of times that the block has been erased and write the data to the selected block.

Abstract: Methods, systems, and devices for data relocation operation techniques are described. A memory system may include blocks of memory cells, for example, within a non-volatile memory device of the memory system. The memory system may identify a command to perform a data relocation operation associated with a block of memory cells and may select between a first procedure and a second procedure for performing the data relocation operation. The memory system may select between the first procedure and the second procedure based on whether one or more parameters associated with the data relocation operation satisfy a threshold. For example, the memory system may select the first procedure if the one or more parameters satisfy the threshold and may select the second procedure if the one or more parameters do not satisfy the threshold. The memory system may perform the data relocation operation using the selected procedure.

Abstract: Disclosed in some examples are improvements to data placement architectures in NAND that provide additional data protection through an improved NAND data placement schema that allows for recovery from certain failure scenarios. The present disclosure stripes data diagonally across page lines and planes to enhance the data protection. Parity bits are stored in SLC blocks for extra protection until the block is finished writing and then the parity bits may be deleted.

Abstract: Methods, systems, and devices for adaptive block mapping are described. In some examples, a first superblock and a second superblock may be established across one or more dice of a memory device. The superblocks may each include one or more blocks from a plurality of planes of a memory die. In some examples, the second superblock may include at least one bad block (e.g., defective block) in addition to one or more good blocks (e.g., non-defective blocks). The memory device may receive a command for writing data in a first mode and may write a first subset of the data to the first superblock in the first mode, a second subset of the data to the second superblock in the first mode, and one or more blocks associated with the second superblock in a second mode. Additionally or alternatively, the memory device may receive a second command for writing data in the second mode and may write the data to the first superblock in the first mode.

Abstract: Disclosed in some examples are improvements to data placement architectures in NAND that provide additional data protection through an improved NAND data placement schema that allows for recovery from certain failure scenarios. The present disclosure stripes data diagonally across page lines and planes to enhance the data protection. Parity bits are stored in SLC blocks for extra protection until the block is finished writing and then the parity bits may be deleted.

Abstract: A processing device of a system receives a request to access a selected sector in a memory component. The selected sector is associated with a sector number. The processing device determines a virtual block corresponding to the selected sector. The virtual block is associated with a misalignment factor and a misalignment counter. The processing device determines if the misalignment counter satisfies a threshold criterion. In response to the misalignment counter satisfying the threshold criterion, the processing device generates an updated sector number by shifting the sector number by the misalignment factor and performs the access to the selected sector using the updated sector number. In response to the misalignment counter not satisfying the threshold criterion, the processing device updates the misalignment counter and performs the access to the selected sector using the sector number.

Abstract: Devices and techniques for managing flash memory are disclosed herein. A memory controller may receive a first program request comprising first host data to be written to the flash memory. The flash memory may comprise a number of storage units with each storage unit comprising a number of storage sub-units. If the first host data is less than a remainder threshold, the memory controller may generate a first program data unit comprising the first host data and first log data describing the flash memory. The memory controller may program the program data unit to the first storage unit of the flash memory, where the first log data is written to a first storage sub-unit of the number of storage sub-unit. The memory controller may also store an indication that the first storage sub-unit is invalid.

Abstract: Devices and techniques for fatal error logging in a memory device are described herein. For example, a read request can be received for a component of the memory device. A fatal error indication of an error that prevents correct execution of read request can be detected. Diagnostic information for the failure indication can be collected. A response to the read request can then be made with a portion of the diagnostic information as payload instead of the user data that would have occupied the payload had the read succeeded. Metadata in the response can be used to communicate an error code.

Abstract: In one approach, a computer storage device has one or more pivot tables and corresponding bit maps stored in volatile memory. The storage device has non-volatile storage media that stores data for a host device. The pivot tables and bit maps are used to determine physical addresses of the non-volatile storage media for logical addresses received in commands from the host device that are determined to be within a sequential address range (e.g., LBAs that are part of a prior sequential write operation by the host device). When a command is received by the storage device that includes a logical address within the sequential address range, then one of the pivot tables and its corresponding bit map are used to determine the physical address of the non-volatile storage media that corresponds to the logical address.

Abstract: Methods, systems, and devices for improved data management for memory are described. An apparatus may include a memory array including one or more blocks of memory cells. Data read from a block of memory cells may be written to a buffer, to support providing the data to a host system or modification of the data by the host system. If a quantity of read commands performed at the block of memory cells satisfies a threshold, the data may be written from the buffer to a different block of memory cells, rather than the block from which the data was previously read.

Abstract: A variety of applications can include systems and methods that utilize a hybrid logical to physical (L2P) caching scheme. A L2P cache and a L2P changelog in a storage device can be controlled for use in write and read operations of a memory system. A page pointer table in the L2P cache can be accessed, for performance of a write operation in the memory system, to obtain a specific physical address mapped to a specified logical block address from a host, where the access is based on the page pointer table loaded into the L2P cache from the L2P changelog. The L2P cache area can be progressively configured with the most frequently accessed page pointer tables in the L2P changelog in the latest host accesses.

Abstract: Disclosed in some examples are improvements to data placement architectures in NAND that provide additional data protection through an improved NAND data placement schema that allows for recovery from certain failure scenarios. The present disclosure stripes data diagonally across page lines and planes to enhance the data protection. Parity bits are stored in SLC blocks for extra protection until the block is finished writing and then the parity bits may be deleted.

Abstract: Methods, systems, and devices for improved data management for memory are described. An apparatus may include a memory array including one or more blocks of memory cells. Data read from a block of memory cells may be written to a buffer, to support providing the data to a host system or modification of the data by the host system. If a quantity of read commands performed at the block of memory cells satisfies a threshold, the data may be written from the buffer to a different block of memory cells, rather than the block from which the data was previously read.

Abstract: Methods, systems, and devices for power management techniques are described. A memory system may receive a command to exit a first power mode and enter a second power mode. The first power mode may have a lower power consumption than the second power mode. The memory system may determine whether a duration of an idle period associated with the first power mode satisfies a threshold based on receiving the command to exit the first power mode. The memory system may receive another command associated with executing a flush operation and perform one or more power management operations based on receiving the command and determining that the duration satisfies the threshold.

Abstract: A variety of applications can include systems and methods that control a memory size of a changelog in a storage device, where the changelog is implemented to correlate virtual page addresses to physical addresses in one or more memory devices. The memory size can be controlled by an allocation schema for a scalable memory area for the changelog in the storage device. The allocation schema can include using bitmaps, lists linked to the bitmaps, and a counter to count bits asserted in the bitmaps such that the allocation of memory space in the storage device can depend on usage rather than allocating a large memory space for all possible correlations of virtual page addresses to physical addresses.

Abstract: Disclosed in some examples are improvements to data placement architectures in NAND that provide additional data protection through an improved NAND data placement schema that allows for recovery from certain failure scenarios. The present disclosure stripes data diagonally across page lines and planes to enhance the data protection. Parity bits are stored in SLC blocks for extra protection until the block is finished writing and then the parity bits may be deleted.