Patents by Inventor Paolo Vergani
Paolo Vergani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11402673Abstract: There is described an RF waveguide array. The array comprises a substrate comprising a plurality of optical waveguides, each waveguide being elongate in a first direction. An electrical RF transmission line array is located on a face of the substrate and comprises a plurality of signal electrodes and a plurality of ground electrodes, each electrode extending in the first direction. Each signal electrode is positioned to provide a signal to two respective waveguides. The ground electrodes include at least one intermediate ground electrode positioned between each pair of signal electrodes. Each intermediate ground electrode includes a portion extending into the substrate.Type: GrantFiled: December 21, 2017Date of Patent: August 2, 2022Assignee: Lumentum Technology UK LimitedInventors: Flavio Dell'Orto, Stefano Balsamo, Paolo Vergani
-
Publication number: 20190346706Abstract: There is described an RF waveguide array. The array comprises a substrate comprising a plurality of optical waveguides, each waveguide being elongate in a first direction. An electrical RF transmission line array is located on a face of the substrate and comprises a plurality of signal electrodes and a plurality of ground electrodes, each electrode extending in the first direction. Each signal electrode is positioned to provide a signal to two respective waveguides. The ground electrodes include at least one intermediate ground electrode positioned between each pair of signal electrodes. Each intermediate ground electrode includes a portion extending into the substrate.Type: ApplicationFiled: December 21, 2017Publication date: November 14, 2019Inventors: Flavio DELL'ORTO, Stefano BALSAMO, Paolo VERGANI
-
Patent number: 10401703Abstract: The invention relates to a folded Mach-Zehnder modulator. The modulator may comprise a beam splitter configured to split an input light beam into a plurality of light beams. The modulator may comprise a plurality of Mach-Zehnder devices configured to receive one or more of the plurality of light beams. The modulator may comprise a U-turn section configured to receive light beams from the Mach-Zehnder devices and to change the direction of the light beams by substantially 180 degrees. The modulator may comprise a polarization management section configured to combine light beams received from the U-turn section and to output a polarization multiplexed phase modulated light beam.Type: GrantFiled: July 31, 2013Date of Patent: September 3, 2019Assignee: Lumentum Technology UK LimitedInventors: Stefano Balsamo, Giuseppe Cusmai, Marco Villa, Nicola Rettani, Paolo Vergani, Haydn Jones
-
Publication number: 20150293426Abstract: The invention relates to a folded Mach-Zehnder modulator. The modulator may comprise a beam splitter configured to split an input light beam into a plurality of light beams. The modulator may comprise a plurality of Mach-Zehnder devices configured to receive one or more of the plurality of light beams. The modulator may comprise a U-turn section configured to receive light beams from the Mach-Zehnder devices and to change the direction of the light beams by substantially 180 degrees. The modulator may comprise a polarisation management section configured to combine light beams received from the U-turn section and to output a polarisation multiplexed phase modulated light beam.Type: ApplicationFiled: July 31, 2013Publication date: October 15, 2015Applicant: OCLARO TECHNOLOGY LIMITEDInventors: Stefano Balsamo, Giuseppe Cusmai, Marco Villa, Nicola Rettani, Paolo Vergani, Haydn Jones
-
Patent number: 8623153Abstract: The present application discloses a method for producing a stable ultra thin metal film that comprises the following steps: a) deposition, on a substrate, of an ultra thin metal film, such as an ultra thin film of nickel, chromium, aluminum, or titanium; b) thermal treatment of the ultra thin metal film, optionally in combination with an O2 treatment; and c) obtaining a protective oxide layer on top of the ultra thin metal film.Type: GrantFiled: June 10, 2009Date of Patent: January 7, 2014Assignee: Fundacio Institut de Ciencies FotoniquesInventors: Valerio Pruneri, Luis Martinez Montblanch, Stefano Giurgola, Paolo Vergani
-
Publication number: 20110114226Abstract: The present application discloses a method for producing a stable ultra thin metal film that comprises the following steps: a) deposition, on a substrate, of an ultra thin metal film, such as an ultra thin film of nickel, chromium, aluminium, or titanium; b) thermal treatment of the ultra thin metal film, optionally in combination with an O2 treatment; and c) obtaining a protective oxide layer on top of the ultra thin metal film.Type: ApplicationFiled: June 10, 2009Publication date: May 19, 2011Inventors: Valerio Pruneri, Luis Martinez Montblanch, Stefano Giurgola, Paolo Vergani
-
Patent number: 7155102Abstract: A method and structure are disclosed with a simplified approach for fabricating a LiNbO3 wafer with Ti indiffusion wafeguide on the surface that is domain inverted. The method involves indiffusing Ti into LiNbO3 with a predefined temperature and time indiffusion range, a Li enriched and dry oxygen atmosphere, which allows making optical waveguides on the z? crystal face without any significant domain inversion occurring on the z+ face of the crystal. This allows for subsequent poling without the need of any additional removal of the thin domain inverted layer which would otherwise appear on the z+ face. Even in instance where a thin domain inversion layer is formed, it is insufficient thick to prevent poling, eliminating the need for the grinding process.Type: GrantFiled: June 19, 2004Date of Patent: December 26, 2006Assignee: Avanex CorporationInventors: Valerio Pruneri, Federico Lucchi, Paolo Vergani
-
Publication number: 20050281523Abstract: A method and structure are disclosed with a simplified approach for fabricating a LiNbO3 wafer with Ti indiffusion wafeguide on the surface that is domain inverted. The method involves indiffusing Ti into LiNbO3 with a predefined temperature and time indiffusion range, a Li enriched and dry oxygen atmosphere, which allows making optical waveguides on the z? crystal face without any significant domain inversion occurring on the z+ face of the crystal. This allows for subsequent poling without the need of any additional removal of the thin domain inverted layer which would otherwise appear on the z+ face. Even in instance where a thin domain inversion layer is formed, it is insufficient thick to prevent poling, eliminating the need for the grinding process.Type: ApplicationFiled: June 19, 2004Publication date: December 22, 2005Applicant: Avanex CorporationInventors: Valerio Pruneri, Federico Lucchi, Paolo Vergani
-
Patent number: 6395618Abstract: The method is based on the use of an etching mask comprising silicon carbide or titanium nitride for removing a sacrificial region. In case of manufacture of integrated semiconductor material structures, the following steps are performed: forming a sacrificial region of silicon oxide on a substrate of semiconductor material; growing a pseudo-epitaxial layer; forming electronic circuit components; depositing a masking layer comprising silicon carbide or titanium nitride; defining photolithographically the masking layer so as to form an etching mask containing the topography of a microstructure to be formed; with the etching mask, forming trenches in the pseudo-epitaxial layer as far as the sacrificial region so as to laterally define the microstructure; and removing the sacrificial region through the trenches.Type: GrantFiled: December 19, 2000Date of Patent: May 28, 2002Assignee: STMicroelectronics S.r.l.Inventors: Paolo Vergani, Ilaria Gelmi, Pietro Montanini, Marco Ferrera, Laura Castoldi
-
Publication number: 20010026951Abstract: The method is based on the use of an etching mask comprising silicon carbide or titanium nitride for removing a sacrificial region. In case of manufacture of integrated semiconductor material structures, the following steps are performed: forming a sacrificial region of silicon oxide on a substrate of semiconductor material; growing a pseudo-epitaxial layer; forming electronic circuit components; depositing a masking layer comprising silicon carbide or titanium nitride; defining photolithographically the masking layer so as to form an etching mask containing the topography of a microstructure to be formed; with the etching mask, forming trenches in the pseudo-epitaxial layer as far as the sacrificial region so as to laterally define the microstructure; and removing the sacrificial region through the trenches.Type: ApplicationFiled: December 19, 2000Publication date: October 4, 2001Inventors: Paolo Vergani, Ilaria Gelmi, Pietro Montanini, Marco Ferrera, Laura Castoldi