Patents by Inventor Pascal Michel Landais

Pascal Michel Landais has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6978057
    Abstract: A laser diode (1) having an optical path (15) defined in an active layer (2) which is sandwiched between a substrate layer (3) and a top layer (4) and defined by a ridge (14) formed in the top layer (4) outputs laser light of a single predetermined wavelength. Refractive index altering grooves (21) extending transversely in the top layer (4) are provided at spaced apart locations for altering the refractive index of the active layer (2) along the optical path at partial reflecting locations (20) for causing partial longitudinal reflections of the laser light generated in the optical path (15) so that standing waves or harmonics thereof of the single predetermined wavelength are set up between the respective partial reflecting locations (20) and a first mirror facet (8) in the optical path (15).
    Type: Grant
    Filed: September 25, 2000
    Date of Patent: December 20, 2005
    Assignee: The Provost Fellows and Scholars of the College of the Holy and Undivided Trinity of Queen Elizabeth near Dublin
    Inventors: James Christopher O'Gorman, Paul McEvoy, David McDonald, Frederick Paul Logue, Pascal Michel Landais
  • Patent number: 6804272
    Abstract: A semiconductor self-pulsating laser diode (1) comprises a wave guiding layer (2) sandwiched between lower and upper cladding layers (4, 5). A current blocking layer (8) defining a slot (10) through which pumping current is directed through the laser diode between upper and lower contact plates (5, 6) defines an active wave guiding region (15). The current blocking layer (8) is shaped by the formation of longitudinally extending recesses (12) for defining the active wave guiding region (15) such that a central pulse light generating region (17) is formed surrounded by an outer light propagating region (18). As the laser diode is continuously pumped, an effective step change in refractive index between the wave guiding layer (2) and the outer light propagating region (18) is formed, and the carrier density and refractive index profiles across the active wave guiding region (15) vary as each light pulse cycle progresses.
    Type: Grant
    Filed: March 14, 2003
    Date of Patent: October 12, 2004
    Assignee: The Provost, Fellows and Scholars of the College of the Holy and Undivided Trinity of Queen Elizabeth Near Dublin
    Inventors: James Christopher O'Gorman, Paul McEvoy, Stephen Anthony Lynch, Pascal Michel Landais
  • Publication number: 20030185262
    Abstract: A semiconductor self-pulsating laser diode (1) comprises a wave guiding layer (2) sandwiched between lower and upper cladding layers (4, 5). A current blocking layer (8) defining a slot (10) through which pumping current is directed through the laser diode between upper and lower contact plates (5, 6) defines an active wave guiding region (15). The current blocking layer (8) is shaped by the formation of longitudinally extending recesses (12) for defining the active wave guiding region (15) such that a central pulse light generating region (17) is formed surrounded by an outer light propagating region (18). As the laser diode is continuously pumped, an effective step change in refractive index between the wave guiding layer (2) and the outer light propagating region (18) is formed, and the carrier density and refractive index profiles across the active wave guiding region (15) vary as each light pulse cycle progresses.
    Type: Application
    Filed: March 14, 2003
    Publication date: October 2, 2003
    Inventors: James Christopher O'Gorman, Paul McEvoy, Stephen Anthony Lynch, Pascal Michel Landais