Abstract: A highly extensible nonwoven web is provided. The highly extensible nonwoven web may include continuous multi-component fibers. The continuous multi-component fibers may include polypropylene, wherein the polypropylene has a crystallinity of less than about 41%. The polypropylene may have a melting temperature of less than about 161° C. The highly extensible nonwoven web may define a plurality of apertures. The apertures may be patterned. The highly extensible nonwoven web may form a portion of an absorbent article.

Abstract: A technique is disclosed for ending metro-clustering on metro volumes. The technique includes collecting a plurality of metrics that indicate respective characteristics associated with a metro volume. In response to receiving a request to end metro on the metro volume, the technique includes comparing the plurality of metrics with a database that associates multiple permutations of metrics with respective procedures for ending metro. The technique further includes identifying, based on the comparison, a target procedure having a permutation of metrics that matches the plurality of metrics and implementing the target procedure.

Abstract: Described herein are compounds of Formula (I) and pharmaceutically acceptable salts thereof, as well as pharmaceutical compositions thereof. Compounds of the present invention are useful for inhibiting PRMT5 activity and may have use in treating proliferative, such as cancer, metabolic and blood disorders. Compounds of Formula (I) have the following structure of Formula (I).

Abstract: A highly extensible nonwoven web is provided. The highly extensible nonwoven web may include continuous multi-component fibers. The continuous multi-component fibers may include polypropylene, wherein the polypropylene has a crystallinity of less than about 41%. The polypropylene may have a melting temperature of less than about 161° C. The highly extensible nonwoven web may define a plurality of apertures. The apertures may be patterned. The highly extensible nonwoven web may form a portion of an absorbent article.

Abstract: The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material.

Abstract: In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.

Abstract: In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.

Abstract: A method and apparatus for forming and annealing a dielectric layer. According to the present invention an active atomic species is generated in a first chamber. A dielectric layer formed on a substrate is then exposed to the active atomic species in a second chamber, wherein the second chamber is remote from the first chamber.

Abstract: An alignment mechanism for aligning a substrate on a support member in a process chamber includes a set of guide pins extending from the upper surface of the support member equally spaced about the periphery thereof and spaced to receive a substrate therebetween and align a shadow ring thereover. The inner surfaces of the guide pins are slanted outwardly to form an inverted funnel for receiving and aligning the substrate on the support member. An annular gas groove in the upper surface of the support member provides communication for a supply of purge gas and directs the gas about the peripheral edge of the substrate. The guide pins which extend partially over the gas groove include slots therein that provide fluid communication through the guide pins from the gas groove to the peripheral edge of the substrate.

Abstract: A method and apparatus for forming a titanium doped tantalum pentaoxide dielectric using a CVD process. According to the present invention a substrate is placed in the deposition chamber. A source of tantalum, a source of titanium, and an oxygen containing gas are then fed into the chamber. Thermal energy is used to decompose the source of tantalum to form tantalum atoms, and decompose the source of titanium to form titanium atoms in the deposition chamber. The titanium atoms, tantalum atoms and the oxygen containing gas then react to form a tantalum pentaoxide dielectric film doped with titanium.

Abstract: An alignment mechanism for aligning a substrate on a support member in a process chamber includes a set of guide pins extending from the upper surface of the support member equally spaced about the periphery thereof and spaced to receive a substrate therebetween and align a shadow ring thereover. The inner surfaces of the guide pins are slanted outwardly to form an inverted funnel for receiving and aligning the substrate on the support member. An annular gas groove in the upper surface of the support member provides communication for a supply of purge gas and directs the gas about the peripheral edge of the substrate. The guide pins which extend partially over the gas groove include slots therein that provide fluid communication through the guide pins from the gas groove to the peripheral edge of the substrate.