Abstract: A method and apparatus of preventing lateral oxidation through gate dielectrics that are highly permeable to oxygen diffusion, such as high-k gate dielectrics. According to one embodiment of the invention, a gate structure is formed on a substrate, the gate structure having an oxygen-permeable gate dielectric. An oxygen diffusion barrier is then formed on the sidewalls of the gate structure to prevent oxygen from diffusing laterally into the oxygen-permeable gate dielectric, thus preventing oxidation to the substrate underneath the gate dielectric or to the electrically conductive gate electrode overlying the gate dielectric.

Abstract: A method and apparatus of preventing lateral oxidation through gate dielectrics that are highly permeable to oxygen diffusion, such as high-k gate dielectrics. According to one embodiment of the invention, a gate structure is formed on a substrate, the gate structure having an oxygen-permeable gate dielectric. An oxygen diffusion barrier is then formed on the sidewalls of the gate structure to prevent oxygen from diffusing laterally into the oxygen-permeable gate dielectric, thus preventing oxidation to the substrate underneath the gate dielectric or to the electrically conductive gate electrode overlying the gate dielectric.

Abstract: A method and apparatus of preventing lateral oxidation through gate dielectrics that are highly permeable to oxygen diffusion, such as high-k gate dielectrics. According to one embodiment of the invention, a gate structure is formed on a substrate, the gate structure having an oxygen-permeable gate dielectric. An oxygen diffusion barrier is then formed on the sidewalls of the gate structure to prevent oxygen from diffusing laterally into the oxygen-permeable gate dielectric, thus preventing oxidation to the substrate underneath the gate dielectric or to the electrically conductive gate electrode overlying the gate dielectric.

Abstract: A structure is provided comprising a semiconductor substrate, a gate oxide layer on the substrate, and a polysilicon layer on the gate oxide layer. A masking layer is formed on the polysilicon layer. The masking layer is then patterned into a mask utilizing conventional photolithographic techniques, but without patterning the polysilicon layer. The photoresist layer is then removed, whereafter the mask, which is patterned out of the masking layer, is utilized for patterning the polysilicon layer. The use of a carbon free mask for patterning the polysilicon layer, instead of a conventional photoresist layer containing carbon, results in less breakthrough through the gate oxide layer when the polysilicon layer is patterned. Less breakthrough through the gate oxide layer allows for the use of thinner gate oxide layers, and finally fabricated transistors having lower threshold voltages.