Abstract: A Group 4 transition metal complex containing a boron or aluminum bridging group containing a nitrogen containing electron donating group, especially an amido group.

Abstract: High internal phase emulsions (HIPEs), porous polymeric materials made therefrom, and methods for making and using the same. Specific embodiments of the invention include water-in-oil high internal phase emulsions having at least 70 volume percent of an internal aqueous phase and less than 30 volume percent of an external oil phase wherein the oil phase comprises a vinyl polymerizable monomer and a surfactant effective to stabilize the emulsion. The subject surfactants are oil soluble and preferably include an oxyalkylene component.

Abstract: Module (10) including a circuit board (30) having a first power-receiving connector (20) and a second power-receiving connector (42) and a power output connector (also 20). A shunt switch (60) is removably matable with posts (74) of the circuit board (30) in either of two orientations by simply being reversed in orientation, to interconnect circuits of the power output connector (20) with either the first power-receiving connector (20) or the second power-receiving connector (42). The module (10) is useful in an NIU and provides for an alternate source of power to the electronics elsewhere in the NIU as well as for voltage test probing of the power circuits (46,48) and testing of the electronics at test port connector (40), while the module also includes connectors (14) for connection of telephony distribution cable to subscriber premise wiring and test ports (16) for testing thereof.

Abstract: Disclosed is a process for preparing bridged Group 4 metal complexes containing a neutral diene ligand starting from the corresponding novel, metal diene containing complexes by reaction thereof with the divalent derivative of a bridged bidentate ligand compound. The novel, intermediate metal diene complexes, their formation from tetravalent metal salts and an integrated process combining both process steps are claimed.

Abstract: Disclosed is a process for preparing bridged Group 4 metal complexes containing a neutral diene ligand starting from the corresponding novel, metal diene containing complexes by reaction thereof with the divalent derivative of a bridged bidentate ligand compound. The novel, intermediate metal diene complexes, their formation from tetravalent metal salts and an integrated process combining both process steps are claimed.

Abstract: Disclosed is a process for preparing bridged Group 4 metal complexes containing a neutral diene ligand starting from the corresponding novel, metal diene containing complexes by reaction thereof with the divalent derivative of a bridged bidentate ligand compound. The novel, intermediate metal diene complexes, their formation from tetravalent metal salts and an integrated process combining both process steps are claimed.

Abstract: An RF transceiver operable in two separate frequency bands has transmitter and receiver elements with broadband components to provide a flat frequency response across the two separate operating frequency bands. The broadband transmitting and receiving elements are utilized with other narrow band components which are designed for operating in either the first frequency band or the second frequency band. The use of common components for operating in both frequency bands reduces part count and cost along with reduced size and weight.

Abstract: A differential input buffer operable at power supply voltages below 3.0 V comprises first and second field effect transistors connected between a power supply and a current source as a differential pair in receiving input and input bar signals. Using enhancement mode field effect transistors and heterojunction bipolar transistors for a current source, a power supply voltage Vcc as low as 2 V is possible for circuit operation.

Abstract: A low voltage regulator integrated circuit for high speed/high frequency circuits incorporates a field effect transistor switch with a heterojunction bipolar transistor in order to reduce voltage requirements of the circuit and allow lower power voltages to be regulated. A first field effect transistor connects an unregulated power input terminal to a regulated power output terminal with a bias circuit including the heterojunction bipolar transistor provided to maintain conductance of the field effect transistor in regulating a voltage on the output terminal. A second field effect transistor can be included in the circuit to provide a power down or power saving mode of operation. An input voltage range of the voltage regulator is reduced from 3-3.5 V to 2-2.3 V using the integrated field effect transistor/heterojunction bipolar transistor device structure.

Abstract: An ATM switch with multicast capability uses a feedback mechanism for resolving contentions. A multicast network reads N cells from an input queue, replicates multicast cells and translates their addresses in accordance with an external look-up table. The processed N cells are stored in a temporary buffer until information regarding the number (F) of cells fed back due to contention in the previous switching cycle is available. A rotator positions N-F cells from the temporary buffer on inputs of an output network so as to assign the cells from the temporary buffer a lower priority than a priority of the feed back cells. The output network selects the cells that can be switched to their destinations and transfers them to output ports. The cells that cannot be switched due to contention are fed back to be presented for the output network consideration in the next switching cycle.

Abstract: A microstrip L-band bipolar dielectric resonator stabilized oscillator (DRO) devised in a moderate size (2'.times.5".times.3.6"), low-cost, reproducible circuit. Embedment of back to back varactors in the DRO provide voltage tuning for phase lock application without compromise of noise performance. Extremely low phase noise with a low l/f noise corner is achieved and the DRO is essentially constant in frequency and output power over temperature, all due to unique circuit configuration. An internal buffer amplifier and dc regulatory circuits provide a DRO that is insensitive to frequency pulling due to load changes and power supply voltage leads. New standards of performance are accomplished that permit simplified stalo configuration with lower phase noise.