Abstract: A method of forming a micro-electromechanical systems (MEMS) pixel, such as a DMD type pixel, by forming a substrate having a non-planar upper surface, and depositing a photoresist spacer layer upon the substrate. The spacer layer is exposed to a grey-scale lithographic mask to shape an upper surface of the spacer layer. A control member is formed upon the planarized spacer layer, and an image member is formed over the control member. The image member is configured to be positioned as a function of the control member to form a spatial light modulator (SLM). The spacer layer is planarized by masking a selected portion of the spacer layer with a grey-scale lithographic mask to remove binge in the selected portion.

Abstract: A method of forming a micro-electromechanical systems (MEMS) pixel, such as a DMD-type pixel, by depositing a photoresist spacer layer upon a substrate. The photoresist spacer layer is exposed to a grey-scale lithographic mask to shape an upper surface of the photoresist spacer layer. A control member is formed upon the shaped spacer layer, and has a sloped portion configured to maximize energy density. An image member is configured to be positioned as a function of the control member to form a spatial light modulator (SLM).

Abstract: A MEMS device is formed with facing surfaces of a contoured substrate and a layer of material having complementary contours. In one fabrication approach, a first photoresist layer is formed over a substrate. Selected regions of the first photoresist layer are exposed using a patterning mask. The exposed regions of the first photoresist layer are thermally shrunk to pattern the first photoresist layer with a contour. A layer of material is formed over the contoured first photoresist layer.

Abstract: A method of forming a micro-electromechanical systems (MEMS) pixel, such as a DMD-type pixel, by depositing a photoresist spacer layer upon a substrate. The photoresist spacer layer is exposed to a grey-scale lithographic mask to shape an upper surface of the photoresist spacer layer. A control member is formed upon the shaped spacer layer, and has a sloped portion configured to maximize energy density. An image member is configured to be positioned as a function of the control member to form a spatial light modulator (SLM).

Abstract: A method of forming a micro-electromechanical systems (MEMS) pixel, such as a DMD type pixel, by forming a substrate having a non-planar upper surface, and depositing a photoresist spacer layer upon the substrate. The spacer layer is exposed to a grey-scale lithographic mask to shape an upper surface of the spacer layer. A control member is formed upon the planarized spacer layer, and an image member is formed over the control member. The image member is configured to be positioned as a function of the control member to form a spatial light modulator (SLM). The spacer layer is planarized by masking a selected portion of the spacer layer with a grey-scale lithographic mask to remove binge in the selected portion.

Abstract: A MEMS device is formed with facing surfaces of a contoured substrate and a layer of material having complementary contours. In one fabrication approach, a first photoresist layer is formed over a substrate. Selected regions of the first photoresist layer are exposed using a patterning mask. The exposed regions of the first photoresist layer are thermally shrunk to pattern the first photoresist layer with a contour. A layer of material is formed over the contoured first photoresist layer.

Abstract: A micromirror array 110 fabricated on a semiconductor substrate 11. The array 110 is comprised of three operating layers 12, 13, 14. An addressing layer 12 is fabricated on the substrate. A hinge layer 13 is spaced above the addressing layer 12 by an air gap. A mirror layer 14 is spaced over the hinge layer 13 by a second air gap. The hinge layer 13 has a hinge 13a under and attached to the mirror 14a, the hinge 13a permitting the mirror 14a to tilt. The hinge layer 13 further has spring tips 13c under the mirror 14a, which are attached to the addressing layer 12. These spring tips 13c provide a stationary landing surface for the mirror 14a.

Abstract: A micromirror array fabricated on a semiconductor substrate. The array is comprised of three operating layers. An addressing layer is fabricated on the substrate. A hinge layer is spaced above the addressing layer by an air gap. A mirror layer is spaced over the hinge layer by a second air gap. The hinge layer has a hinge under and attached to the mirror, the hinge permitting the mirror to tilt. The hinge layer further has spring tips under the mirror, which are attached to the addressing layer. These spring tips provide a stationary landing surface for the mirror.

Abstract: A micromirror array fabricated on a semiconductor substrate. The array is comprised of three operating layers. An addressing layer is fabricated on the substrate. A hinge layer is spaced above the addressing layer by an air gap. A mirror layer is spaced over the hinge layer by a second air gap. The hinge layer has a hinge under and attached to the mirror, the hinge permitting the mirror to tilt. The hinge layer further has spring tips under the mirror, which are attached to the addressing layer. These spring tips provide a stationary landing surface for the mirror.

Abstract: A micromirror array 110 fabricated on a semiconductor substrate 11. The array 110 is comprised of three operating layers 12, 13, 14. An addressing layer 12 is fabricated on the substrate. A hinge layer 13 is spaced above the addressing layer 12 by an air gap. A mirror layer 14 is spaced over the hinge layer 13 by a second air gap. The hinge layer 13 has a hinge 13a under and attached to the mirror 14a, the hinge 13a permitting the mirror 14a to tilt. The hinge layer 13 further has spring tips 13c under the mirror 14a, which are attached to the addressing layer 12. These spring tips 13c provide a stationary landing surface for the mirror 14a.

Abstract: A method and apparatus are provided for detecting and monitoring micro-volumetric enthalpic changes caused by molecular reactions. Micro-machining techniques are used to create very small thermally isolated masses incorporating temperature-sensitive circuitry. The thermally isolated masses are provided with a molecular layer or coating, and the temperature-sensitive circuitry provides an indication when the molecules of the coating are involved in an enthalpic reaction. The thermally isolated masses may be provided singly or in arrays and, in the latter case, the molecular coatings may differ to provide qualitative and/or quantitative assays of a substance.

Abstract: A method and apparatus for measuring the viscosity and/or specific density of a fluid utilizes a microcantilever vibrated in the analyte fluid. The source of vibration is switched on and off and the transient behavior or decay in amplitude of the vibration is monitored. The method is particularly useful for the measurement of process conditions in remote locations in real time.

Abstract: A spectrum of electromagnetic radiation is detected by spatially dispersing radiation of varying wavelengths onto micromechanical sensors. As the micromechanical sensors absorb radiation, the sensors bend and/or undergo a shift in the resonance characteristics. The device can be used as a spectrometer or a temperature sensing device. A temperature sensor using micromechanical sensors can accurately and quickly measure the temperature of a remote object by sensing a spectrum of infrared radiation emitted by the object. The temperature sensor can measure temperature without knowing the emissivity of the object or the distance of the object from the detector.

Abstract: A non-contact infrared thermometer measures target temperatures remotely without requiring the ratio of the target size to the target distance to the thermometer. A collection means collects and focusses target IR radiation on an IR detector. The detector measures thermal energy of the target over a spectrum using micromechanical sensors. A processor means calculates the collected thermal energy in at least two different spectral regions using a first algorithm in program form and further calculates the ratio of the thermal energy in the at least two different spectral regions to obtain the target temperature independent of the target size, distance to the target and emissivity using a second algorithm in program form.