Patents by Inventor Patrick J. Helly

Patrick J. Helly has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD AND APPARATUS FOR USING SOLUTION BASED PRECURSORS FOR ATOMIC LAYER DEPOSITION
    Publication number: 20120294753
    Abstract: A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.
    Type: Application
    Filed: November 17, 2011
    Publication date: November 22, 2012
    Inventors: Ce MA, Qing Min WANG, Patrick J. HELLY, Richard HOGLE
  • METHOD AND APPARATUS FOR USING SOLUTION BASED PRECURSORS FOR ATOMIC LAYER DEPOSITION
    Publication number: 20120295038
    Abstract: A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.
    Type: Application
    Filed: November 17, 2011
    Publication date: November 22, 2012
    Inventors: Ce Ma, Qing Min Wang, Patrick J. Helly, Richard Hogle
  • METHODS AND APPARATUS FOR THE VAPORIZATION AND DELIVERY OF SOLUTION PRECURSORS FOR ATOMIC LAYER DEPOSITION
    Publication number: 20100151261
    Abstract: Improved apparatus and methods for atomic layer deposition (ALD) are described—In particular, improved methods and apparatus for the vaporization and delivery of solution ALD precursors are provided. The present invention is particularly useful for processing lower volatile metal, metal oxide, metal nitride and other thin film precursors. The present invention uses total vaporization chambers and room temperature valve systems to generate true ALD vapor pulses while increasing utilization efficiency of the solution precursors.
    Type: Application
    Filed: July 6, 2007
    Publication date: June 17, 2010
    Inventors: Ce Ma, Patrick J. Helly, Qing Min Wang
  • METHODS FOR ATOMIC LAYER DEPOSITION
    Publication number: 20100036144
    Abstract: Improved methods for performing atomic layer deposition (ALD) are described. These improved methods provide more complete saturation of the surface reactive sites and provides more complete monolayer surface coverage at each half-cycle of the ALD process. In one embodiment, operating parameters are fixed for a given solvent based precursor. In another embodiment, one operating parameter, e.g. chamber pressure is altered during the precursor deposition to assure full surface saturation.
    Type: Application
    Filed: July 12, 2007
    Publication date: February 11, 2010
    Inventors: Ce Ma, Graham McFarlane, Qing Min Wang, Patrick J. Helly
  • METHOD AND APPARATUS FOR USING SOLUTION PRECURSORS FOR ATOMIC LAYER DEPOSITION
    Publication number: 20090220374
    Abstract: A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.
    Type: Application
    Filed: March 3, 2009
    Publication date: September 3, 2009
    Inventors: Ce MA, Qing Min WANG, Patrick J. HELLY, Richard HOGLE
  • Method and apparatus for using solution based precursors for atomic layer deposition
    Patent number: 7514119
    Abstract: A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.
    Type: Grant
    Filed: April 10, 2006
    Date of Patent: April 7, 2009
    Assignee: Linde, Inc.
    Inventors: Ce Ma, Qing Min Wang, Patrick J. Helly, Richard Hogle
  • Purification of methylsilanes
    Patent number: 6444013
    Abstract: A process for purifying methylsilane is described. Methylsilane containing impurities such as carbon dioxide, chlorosilane and atmospheric gases is fed from a source container unit to an adsorption unit at −40° C. The adsorption unit is connected to a collection unit at −190° C. where the purified methylsilane is transported and can be stored.
    Type: Grant
    Filed: September 19, 2000
    Date of Patent: September 3, 2002
    Assignee: The Boc Group, Inc.
    Inventors: Patrick J. Helly, Masud Akhtar