Patents by Inventor Patrick J. McCann
Patrick J. McCann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9683933Abstract: Disclosed herein are methods and mid-IR detection apparatus to measure analytes in gas or liquid phase. Solid state cooling of a crystalline lattice is effectively achieved with the controlled flow of charge carriers that absorb thermal energy from the semiconductor material which senses mid-IR photons. Reduction in temperature improves signal-to-noise ratios thus improving molecular sensitivity. In one embodiment the apparatus is used to detect a biomarker.Type: GrantFiled: October 30, 2013Date of Patent: June 20, 2017Assignee: The Board of Regents of the University of OklahomaInventor: Patrick J. McCann
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Patent number: 9601327Abstract: A high power electronic device package constructed to include a high power electronic device having an epitaxial surface attached to a thermally conductive submount by a thermally conductive interface layer having a eutectic metal contact therein. A gallium nitride high electron mobility transistor (GaN HEMT) having a transistor structure formed of a GaN thin film layer bonded to a thermally conductive host substrate via a thermally conductive interface layer disposed therebetween, and a method of forming the GaN HEMT. The GaN HEMTs can be used in such applications as, for example, power amplifiers with x-band radio frequency (RF) power outputs for micro-radar applications.Type: GrantFiled: August 17, 2015Date of Patent: March 21, 2017Assignee: The Board of Regents of the University of OklahomaInventor: Patrick J. McCann
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Publication number: 20160049351Abstract: A high power electronic device package constructed to include a high power electronic device having an epitaxial surface attached to a thermally conductive submount by a thermally conductive interface layer having a eutectic metal contact therein. A gallium nitride high electron mobility transistor (GaN HEMT) having a transistor structure formed of a GaN thin film layer bonded to a thermally conductive host substrate via a thermally conductive interface layer disposed therebetween, and a method of forming the GaN HEMT. The GaN HEMTs can be used in such applications as, for example, power amplifiers with x-band radio frequency (RF) power outputs for micro-radar applications.Type: ApplicationFiled: August 17, 2015Publication date: February 18, 2016Inventor: Patrick J. McCann
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Publication number: 20140117238Abstract: Disclosed herein are methods and mid-IR detection apparatus to measure analytes in gas or liquid phase. Solid state cooling of a crystalline lattice is effectively achieved with the controlled flow of charge carriers that absorb thermal energy from the semiconductor material which senses mid-IR photons. Reduction in temperature improves signal-to-noise ratios thus improving molecular sensitivity. In one embodiment the apparatus is used to detect a biomarker.Type: ApplicationFiled: October 30, 2013Publication date: May 1, 2014Applicant: The Board of Regents of the University of OklahomaInventor: Patrick J. McCann
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Patent number: 6841805Abstract: A method for generating mid-infrared light by maintaining multiple quantum well (MQW) structures based on the alloy systems PbSrZ and PbSnZ, where Z is S, Se, or Te, at temperatures in the range of from about 5° C. to about 55° C. and pumping the MQW structures with a shorter wavelength laser pump beam or with an electrical current is provided.Type: GrantFiled: July 10, 2002Date of Patent: January 11, 2005Assignee: McCann & Associates, Inc.Inventors: Patrick J. McCann, Xiao-Ming Fang
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Publication number: 20040208219Abstract: A method for generating mid-infrared light by maintaining multiple quantum well (MQW) structures based on the alloy systems PbSrZ and PbSnZ, where Z is S, Se, or Te, at temperatures in the range of from about 5° C. to about 55° C. and pumping the MQW structures with a shorter wavelength continuous wave laser pump beam or with an electrical current is provided.Type: ApplicationFiled: May 10, 2004Publication date: October 21, 2004Inventors: Patrick J. McCann, Xiao-Ming Fang
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Publication number: 20040050004Abstract: Disclosed is a tie for securing insulation to a cast concrete wall comprising: a head; a shaft attached to the head and having a longitudinal axis, the shaft comprising a series of barbs positioned at pre-determined longitudinal positions along the longitudinal axis, each successive barb being rotated about the longitudinal axis by a pre-determined rotational increment from the immediately preceding barb; and, a tip on the shaft.Type: ApplicationFiled: September 12, 2002Publication date: March 18, 2004Applicant: McCann Redi-Mix Inc.Inventor: Patrick J. McCann
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Publication number: 20020177248Abstract: A method for generating mid-infrared light by maintaining multiple quantum well (MQW) structures based on the alloy systems PbSrZ and PbSnZ, where Z is S, Se, or Te, at temperatures in the range of from about 5° C. to about 55° C. and pumping the MQW structures with a shorter wavelength laser pump beam or with an electrical current is provided.Type: ApplicationFiled: July 10, 2002Publication date: November 28, 2002Inventors: Patrick J. McCann, Xiao-Ming Fang
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Patent number: 5932964Abstract: A light-emitting, specifically electroluminescent, europium-containing Group IIA fluoride epitaxial layer on silicon with a europium concentration in the range of from about 4 to about 40 wt % and a molecular beam epitaxy method for growth thereof are provided. Also provided is a light-emitting, specifically electroluminescent, device including a europium-containing Group IIA fluoride epitaxial layer on silicon with a europium concentration in the range of from about 4 to about 40 wt %. The Group IIA fluoride layer exhibits electroluminescence in the wavelength range of from about 450 to about 700 nm.Type: GrantFiled: September 15, 1997Date of Patent: August 3, 1999Assignee: McCann & Associates, Inc.Inventors: Patrick J. McCann, Xiao-Ming Fang, Tathagata Chatterjee
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Patent number: 5882739Abstract: The present invention provides a method for improving the drying performance of a dishwasher and the resulting products thereof. The method involves chemically treating a dishwasher component to alter or modify the chemical properties of the surface, rendering such surface hydrophilic. The hydrophilic surface sufficiently attracts water molecules within the dishwasher to enhance the drying capabilities of the dishwasher.Type: GrantFiled: March 20, 1997Date of Patent: March 16, 1999Assignee: Whirlpool CorporationInventors: Duane M. Kobos, Patrick J. MCCann
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Patent number: 5776794Abstract: A semiconductor laser device, and method for making such, having higher operating temperatures than previously available. A semiconductor epitaxial layer is bonding to a cleaving assembly which allows the epitaxial layer to be manipulated without use of traditional substrate forms. The resulting semiconductor laser is bonded to a metal portion which serves as a heat sink for dissipating heat from the active lasing region. The resulting semiconductor lasers can be cooled by thermoelectric cooling modules, thus eliminating the necessity of using more bulky cryogenic systems.Type: GrantFiled: May 7, 1997Date of Patent: July 7, 1998Assignee: The Board of Regents of the University of OklahomaInventor: Patrick J. McCann
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Patent number: 5629097Abstract: A semiconductor laser device, and method for making such, having higher operating temperatures than previously available. A semiconductor epitaxial layer is bonding to a cleaving assembly which allows the epitaxial layer to be manipulated without use of traditional substrate forms. The resulting semiconductor laser is bonded to a metal portion which serves as a heat sink for dissipating heat from the active lasing region. The resulting semiconductor lasers can be cooled by thermoelectric cooling modules, thus eliminating the necessity of using more bulky cryogenic systems.Type: GrantFiled: November 30, 1994Date of Patent: May 13, 1997Assignee: The Board of Regents of the University of OklahomaInventor: Patrick J. McCann
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Patent number: 5454002Abstract: A semiconductor laser device, and method for making such, having higher operating temperatures than previously available. A semiconductor epitaxial layer is bonding to a cleaving assembly which allows the epitaxial layer to be manipulated without use of traditional substrate forms. The resulting semiconductor laser is bonded to a metal portion which serves as a heat sink for dissipating heat from the active lasing region. The resulting semiconductor lasers can be cooled by thermoelectric cooling modules, thus eliminating the necessity of using more bulky cryogenic systems.Type: GrantFiled: April 28, 1994Date of Patent: September 26, 1995Assignee: The Board of Regents of The University of OklahomaInventor: Patrick J. McCann
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Patent number: 5310696Abstract: A chemical method for the modification of a substrate surface by compound formation to accomplish heteroepitaxial crystal growth is provided. This method enables the growth of semiconductors on insulators allowing fabrication of three dimensionally integrated devices. Devices include vertical FET's for DRAM storage cells, integrated diode laser/FET's, integrated detector/FET's, and common gate CMOS inverters.Type: GrantFiled: September 30, 1991Date of Patent: May 10, 1994Assignee: Massachusetts Institute of TechnologyInventors: Patrick J. McCann, Glifton G. Fonstad
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Patent number: 4369946Abstract: Several cable clips are disclosed, all capable of use with an extensive range of numbers and/or sizes of cable, by virtue of providing a resilient arm of particular shape and stiffness, in conjunction with a finger which extends from one end of the arm, the other end of the finger being either free, or joined with the arm, or capable of latching engagement with either the arm or a base of the cable clip.Type: GrantFiled: July 14, 1980Date of Patent: January 25, 1983Assignee: ITW LimitedInventors: John P. Palmer, Patrick J. McCann