Abstract: A fluorination catalyst such as a chromium oxide-based fluorination catalyst may be activated or reactivated by contacting the catalyst. with a source of reactive fluorine, for example nitrogen trifluoride (NF3) or fluorine (F2). Fluorinated compounds may be prepared by the gas phase reaction of hydrogen fluoride (HF) with various substrates such as chlorinated compounds. A number of metal oxide-based catalysts have been developed for this purpose.

Abstract: A fluorination catalyst such as a chromium oxide-based fluorination catalyst may be activated or reactivated by contacting the catalyst. with a source of reactive fluorine, for example nitrogen trifluoride (NF3) or fluorine (F2). Fluorinated compounds may be prepared by the gas phase reaction of hydrogen fluoride (HF) with various substrates such as chlorinated compounds. A number of metal oxide-based catalysts have been developed for this purpose.

Abstract: A family of slurries are disclosed which are useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working slurries, and semiconductor wafers. The slurries of the invention are comprised of a liquid carrier; a sulfur-bearing compounds capable of converting copper to copper sulfide; optionally, abrasive particles (polishing agent; optionally a chelating agent; optionally a buffering agent; optionally, a stopping compound; optionally, other additives; and optionally, a co-solvent.

Abstract: A family of slurries are disclosed which are useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working slurries, and semiconductor wafers. The slurries of the invention are comprised of a liquid carrier; a sulfur-bearing compounds capable of converting copper to copper sulfide; optionally, abrasive particles (polishing agent; optionally a chelating agent; optionally a buffering agent; optionally, a stopping compound; optionally, other additives; and optionally, a co-solvent.

Abstract: Formulations and procedures for the deposition of precious metals onto solid substrates are disclosed wherein the formulations are iodide-free and contain an organosulfur compound and/or a carboxylic acid and a source of soluble precious metal ion which is one or more precious metal alkanesulfonates, precious metal alkanesulfonamides and/or precious metal alkanesulfonimides. The formulations and processes may be cyanide-free, and the deposition may be effected by electrolytic, electroless and/or immersion plating techniques.