Abstract: The invention relates to a gas sampling device for a filling station for hydrogen tanks, said device comprising a circuit comprising a first upstream end provided with an inlet connector to a detachably connected to an outlet connector of a filling station, and two conduits respectively for sampling and filling connected in parallel to the inlet connector, the sampling conduit comprising a valve system, a first pressure reducing valve and a container for collecting a sample of gas expanded by said first pressure reducing valve, and the filling conduit comprising a downstream end provided with a first outlet connector to a detachably connected to an inlet connector of a tank to be filled.

Abstract: The invention relates to a gas sampling device for a filling station for hydrogen tanks, said device comprising a circuit comprising a first upstream end provided with an inlet connector to a detachably connected to an outlet connector of a filling station, and two conduits respectively for sampling and filling connected in parallel to the inlet connector, the sampling conduit comprising a valve system, a first pressure reducing valve and a container for collecting a sample of gas expanded by said first pressure reducing valve, and the filling conduit comprising a downstream end provided with a first outlet connector to a detachably connected to an inlet connector of a tank to be filled.

Abstract: Provided is a process for measuring the amount of impurities in a gas sample filling a laser absorption spectroscopy analysis cell. The process includes calculating the value of a characteristic representative of the absorbance of the gas sample, from a measurement of the gas sample at a single given pressure, and quantifying the impurities on the basis of a predetermined law for the variation of the characteristic as a function of the amount of impurities. The characteristic is the ratio of the difference between the luminous intensity (Iana) of a light beam transmitted through the gas and the luminous intensity (Iref) of the incident beam to the luminous intensity (Iref) of the incident beam. The impurities are quantified on the basis of a value of the coefficient of proportionality between the amount of impurities and the characteristic, determined on the basis of a table of variation of the characteristic as a function of pressure, for a given amount of impurities.

Abstract: The invention relates to a process for analyzing traces of at least one impurity in a gas sample, by absorption by the impurity to be detected of a light beam emitted by a semiconductor diode laser, the beam emitted by the diode being split into at least two branched beams, one called the measurement beam which passes through the gas sample to be analyzed in a multipassage cell before being focused onto a measurement photodetector, another branched beam, called the reference beam, being along a reference path and directly focused onto a reference photodetector without encountering the gas sample, in which process the gas sample is at a pressure at least equal to atmospheric pressure, and a modulation of the supply current of the diode has been introduced, which comprises at least one function of the exponential type.

Abstract: The apparatus for determining the quantity of impurity in a gas by chromatography in gas phase comprises a device for cryogenically trapping impurities, which is provided with a column filled with granular particles of a product capable of adsorbing the impurities, refrigerating means capable of keeping the column at low temperature during passage of the gas loaded with impurities and reheating means for an ulterior desorption;a first chromatographic adsorber in gas phase intended for a preliminary analysis and provided with a filling column for each impurity;a device for the cryogenic recentering of the purities, which is provided with a capillary column, refrigerating means capable of keeping the column at low temperature during the passage of a carrier gas which has gone through the first chromatographic adsorber, and desorption reheating means;and a second chromatographic adsorber in gas phase provided with a capillary column, a detection device being mounted at the outlet.