Patents by Inventor Patrick N. Grillot
Patrick N. Grillot has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9905730Abstract: In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.Type: GrantFiled: March 7, 2014Date of Patent: February 27, 2018Assignee: Lumileds LLCInventors: Patrick N. Grillot, Rafael I. Aldaz, Deborah L. Colbentz, Anneli Munkholm, Hanmin Zhao
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Patent number: 8945975Abstract: In some embodiments of the invention, a device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. The second semiconductor layer is disposed between the first semiconductor layer and the third semiconductor layer. The third semiconductor layer is disposed between the second semiconductor layer and the light emitting layer. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the third semiconductor layer is no more than 1%. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the second semiconductor layer is at least 1%. The third semiconductor layer is at least partially relaxed.Type: GrantFiled: February 12, 2014Date of Patent: February 3, 2015Assignees: Koninklijke Philips N.V., Philips Lumileds Lighting Company LLCInventors: Andrew Y. Kim, Patrick N. Grillot
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Publication number: 20140183595Abstract: In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.Type: ApplicationFiled: March 7, 2014Publication date: July 3, 2014Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Patrick N. GRILLOT, Rafael I. ALDAZ, Deborah L. COLBENTZ, Anneli MUNKHOLM, Hanmin ZHAO
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Publication number: 20140162389Abstract: In some embodiments of the invention, a device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. The second semiconductor layer is disposed between the first semiconductor layer and the third semiconductor layer. The third semiconductor layer is disposed between the second semiconductor layer and the light emitting layer. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the third semiconductor layer is no more than 1%. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the second semiconductor layer is at least 1%. The third semiconductor layer is at least partially relaxed.Type: ApplicationFiled: February 12, 2014Publication date: June 12, 2014Applicant: KONINKLIJKE PHILIPS N.V.Inventors: Andrew Y. Kim, Patrick N. Grillot
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Patent number: 8692261Abstract: In some embodiments of the invention, a device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. The second semiconductor layer is disposed between the first semiconductor layer and the third semiconductor layer. The third semiconductor layer is disposed between the second semiconductor layer and the light emitting layer. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the third semiconductor layer is no more than 1%. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the second semiconductor layer is at least 1%. The third semiconductor layer is at least partially relaxed.Type: GrantFiled: May 19, 2010Date of Patent: April 8, 2014Assignees: Koninklijke Philips N.V., Philips Lumileds Lighting Company, LLCInventors: Andrew Y. Kim, Patrick N. Grillot
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Patent number: 8692286Abstract: In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.Type: GrantFiled: December 14, 2007Date of Patent: April 8, 2014Assignee: Philips Lumileds Lighing Company LLCInventors: Patrick N. Grillot, Rafael I. Aldaz, Deborah L. Coblentz, Anneli Munkholm, Hanmin Zhao
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Patent number: 8679869Abstract: An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to a mount via the contacts. A growth substrate is removed from the semiconductor structure and a thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 ?m some embodiments, less than 10 ?m in some embodiments. The top side of the semiconductor structure may be textured.Type: GrantFiled: March 19, 2012Date of Patent: March 25, 2014Assignee: Philips Lumileds Lighting Company, LLCInventors: Rafael I. Aldaz, John E. Epler, Patrick N. Grillot, Michael R. Krames
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Patent number: 8507929Abstract: One or more regions of graded composition are included in a III-P light emitting device, to reduce the Vf associated with interfaces in the device. In accordance with embodiments of the invention, a semiconductor structure comprises a III-P light emitting layer disposed between an n-type region and a p-type region. A graded region is disposed between the p-type region and a GaP window layer. The aluminum composition is graded in the graded region. The graded region may have a thickness of at least 150 nm. In some embodiments, in addition to or instead of a graded region between the p-type region and the GaP window layer, the aluminum composition is graded in a graded region disposed between an etch stop layer and the n-type region.Type: GrantFiled: June 16, 2008Date of Patent: August 13, 2013Assignee: Koninklijke Philips Electronics N.V.Inventors: Patrick N. Grillot, Rafael I. Aldaz, Eugene I. Chen, Sateria Salim
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Publication number: 20120187372Abstract: An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to the mount via the contacts. The growth substrate is removed from the semiconductor structure and the thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 ?m in some embodiments, less than 10 ?m in some embodiments. The top side of the semiconductor structure may be textured.Type: ApplicationFiled: March 19, 2012Publication date: July 26, 2012Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Rafael I. Aldaz, John E. Epler, Patrick N. Grillot, Michael R. Krames
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Publication number: 20110284890Abstract: In some embodiments of the invention, a device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. The second semiconductor layer is disposed between the first semiconductor layer and the third semiconductor layer. The third semiconductor layer is disposed between the second semiconductor layer and the light emitting layer. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the third semiconductor layer is no more than 1%. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the second semiconductor layer is at least 1%. The third semiconductor layer is at least partially relaxed.Type: ApplicationFiled: May 19, 2010Publication date: November 24, 2011Applicants: PHILIPS LUMILEDS LIGHTING COMPANY, LLC, KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Andrew Y. KIM, Patrick N. GRILLOT
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Patent number: 7951693Abstract: In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane?abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.Type: GrantFiled: December 22, 2006Date of Patent: May 31, 2011Assignee: Philips Lumileds Lighting Company, LLCInventors: Patrick N. Grillot, Nathan F. Gardner, Werner K. Goetz, Linda T. Romano
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Publication number: 20090309111Abstract: One or more regions of graded composition are included in a III-P light emitting device, to reduce the Vf associated with interfaces in the device. In accordance with embodiments of the invention, a semiconductor structure comprises a III-P light emitting layer disposed between an n-type region and a p-type region. A graded region is disposed between the p-type region and a GaP window layer. The aluminum composition is graded in the graded region. The graded region may have a thickness of at least 150 nm. In some embodiments, in addition to or instead of a graded region between the p-type region and the GaP window layer, the aluminum composition is graded in a graded region disposed between an etch stop layer and the n-type region.Type: ApplicationFiled: June 16, 2008Publication date: December 17, 2009Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: PATRICK N. GRILLOT, RAFAEL I. ALDAZ, EUGENE I. CHEN, SATERIA SALIM
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Publication number: 20090173956Abstract: An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to the mount via the contacts. The growth substrate is removed from the semiconductor structure and the thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 ?m in some embodiments, less than 10 ?m in some embodiments. The top side of the semiconductor structure may be textured.Type: ApplicationFiled: December 14, 2007Publication date: July 9, 2009Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: RAFAEL I. ALDAZ, JOHN E. EPLER, PATRICK N. GRILLOT, MICHAEL R. KRAMES
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Publication number: 20090152584Abstract: In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.Type: ApplicationFiled: December 14, 2007Publication date: June 18, 2009Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: PATRICK N. GRILLOT, RAFAEL I. ALDAZ, DEBORAH L. COBLENTZ, ANNELI MUNKHOLM, HANMIN ZHAO
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Patent number: 7547908Abstract: In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane?abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.Type: GrantFiled: December 22, 2006Date of Patent: June 16, 2009Assignee: Philips Lumilieds Lighting Co, LLCInventors: Patrick N. Grillot, Nathan F. Gardner, Werner K. Goetz, Linda T. Romano
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Patent number: 7534638Abstract: In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane?abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.Type: GrantFiled: December 22, 2006Date of Patent: May 19, 2009Assignee: Philips Lumiled Lighting Co., LLCInventors: Patrick N. Grillot, Nathan F. Gardner, Werner K. Goetz, Linda T. Romano
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Publication number: 20090032828Abstract: A semiconductor light emitting device includes a wurtzite III-nitride semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A template layer and a dislocation bending layer are grown before the light emitting layer. The template layer is grown such that at least 70% of the dislocations in the template layer are edge dislocations. At least some of the edge dislocations in the template layer continue into the dislocation bending layer. The dislocation bending layer is grown to have a different magnitude of strain than the template layer. The change in strain at the interface between the template layer and the dislocation bending layer causes at least some of the edge dislocations in the template layer to bend to a different orientation in the dislocation bending layer. Semiconductor material grown above the bent edge dislocations may exhibit reduced strain.Type: ApplicationFiled: August 3, 2007Publication date: February 5, 2009Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Linda T. Romano, Patrick N. Grillot
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Publication number: 20080149961Abstract: In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane?abulk)/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.Type: ApplicationFiled: December 22, 2006Publication date: June 26, 2008Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Patrick N. Grillot, Nathan F. Gardner, Werner K. Goetz, Linda T. Romano
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Publication number: 20080153192Abstract: In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane?abulk)/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.Type: ApplicationFiled: December 22, 2006Publication date: June 26, 2008Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Patrick N. Grillot, Nathan F. Gardner, Werner K. Goetz, Linda T. Romano
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Publication number: 20080153191Abstract: In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane?abulk)/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.Type: ApplicationFiled: December 22, 2006Publication date: June 26, 2008Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Patrick N. Grillot, Nathan F. Gardner, Werner K. Goetz, Linda T. Romano