Abstract: A method for adjusting a detector (110) for determining a position of at least one object (112) within a range of measurement (114) is disclosed. The detector (110) comprises at least two longitudinal optical sensors (116) and at least one transfer device (118) for imaging the object (112) into an image plane. The transfer device (118) has a focal plane. The transfer device (118) is positioned in between the longitudinal optical sensors (116) and the object (112). Each of the longitudinal optical sensors (116) has at least one sensor region (120). Each of the longitudinal optical sensors (116) is designed to generate at least one longitudinal sensor signal in a manner dependent on an illumination of the respective sensor region (120) by at least one light beam (178) propagating from the object (112) to the detector (110), wherein the longitudinal sensor signal, given the same total power of the illumination, is dependent on a beam cross-section of the light beam (178) in the sensor region (120).

Abstract: A detector (110) for determining a position of at least one object (112) is disclosed.

Abstract: A semiconductor device includes transistor cells formed along a first surface at a front side of a semiconductor body and having body regions of a first conductivity type, a drift region of a second conductivity type that is opposite from the first conductivity type and is disposed between the body regions and a second surface of the semiconductor body that is opposite from the first surface, and an emitter layer of the second conductivity type that is disposed between the drift region and a second surface of the semiconductor body, the emitter layer having a higher dopant concentration than the drift region, a metal drain electrode directly adjoining the emitter layer. The metal drain electrode comprises spikes extending into the emitter layer.

Abstract: A detector for determining a position of at least one object is provided. The detector includes an evaluation device adapted to select at least one reflection feature of a reflection image, wherein the evaluation device is configured for determining at least one longitudinal region of the selected reflection feature of the reflection image by evaluating a combined signal Q from the sensor signals, wherein the evaluation device is adapted to determine at least one displacement region in at least one reference image corresponding to the longitudinal region, wherein the evaluation device is adapted to match the selected reflection feature with at least one reference feature within the displacement region.

Abstract: A system for the reduction of noises in an interior of a vehicle includes a closure element, in particular a vehicle door or a window element, closing an opening of a body of the vehicle. A sealing arrangement is provided between the opening and the closure element. The sealing arrangement includes at least a first sealing element and a second sealing element. The rigidity of the first sealing element differs from the rigidity of the second sealing element.

Abstract: A detector for determining a position of at least one object is disclosed and includes at least one sensor element having a matrix of optical sensors, the optical sensors each having a light-sensitive area. Each optical sensor is designed to generate at least one sensor signal in response to an illumination of its respective light-sensitive area by a light beam propagating from the object to the detector. The sensor element is adapted to determine at least one reflection image. The detector also includes at least one evaluation device adapted to select at least one reflection feature of the reflection image at least one first image position in the reflection image. The evaluation device is adapted to determine at least one reference feature in at least one reference image and at least one second image position in the reference image corresponding to the at least one reflection feature.

Abstract: According to an embodiment of a semiconductor device, the semiconductor device includes: transistor cells formed along a first surface at a front side of a semiconductor portion; a drain structure between the transistor cells and a second surface of the semiconductor portion opposite to the first surface, the drain structure forming first pn junctions with body regions of the transistor cells and including an emitter layer directly adjoining the second surface; and a metal drain electrode directly adjoining the emitter layer. An integrated concentration of activated dopants along a shortest line between the metal drain electrode and a closest doped region of a charge type of the body regions is at most 1.5E13 cm?2. Further semiconductor device embodiments are described.

Abstract: A range finder for determining at least one geometric information about at least one object is proposed that includes at least one illumination source adapted to generate at least one illumination pattern, wherein the illumination source is adapted to illuminate the object with the illumination pattern under an angle of inclination; at least one optical sensor having at least one light sensitive area, wherein the optical sensor is designed to generate at least one image matrix in response to an illumination of its light sensitive area by at least one reflection pattern originating from the object; at least one evaluation device being configured for determining the geometric information about the object from the reflection pattern by evaluating the image matrix assuming at least one geometrical constellation to be present in the reflection pattern.

Abstract: A detector (110) for determining a position of at least one object (112) is disclosed.

Abstract: A method includes partly removing a supporting layer arranged between a first semiconductor layer and a second semiconductor layer using an etching process to form at least one undercut between the first semiconductor layer and the second semiconductor layer, at least partly filling the at least one undercut with a first material having a higher thermal conductivity than the supporting layer, and forming a sensor device in or on the second semiconductor layer. Semiconductor arrangements and devices produced by the method are also described.

Abstract: A detector (110, 1110, 2110) for determining a position of at least one object (112) is proposed. The detector (110, 1110, 2110) comprises: at least one transfer device (128, 1128), wherein the transfer device (128, 1128) has at least one focal length in response to at least one incident light beam (116, 1116) propagating from the object (112, 1112) to the detector (110, 1110, 2110); at least two optical sensors (113, 1118, 1120), wherein each optical sensor (113, 1118, 1120) has at least one light sensitive area (121, 1122, 1124), wherein each optical sensor (113, 1118, 1120) is designed to generate at least one sensor signal in response to an illumination of its respective light-sensitive area by the light beam (116, 1116), at least one evaluation device (132, 1132) being configured for determining at least one longitudinal coordinate z of the object (112, 1112) by evaluating a quotient signal Q from the sensor signals.

Abstract: According to an embodiment of a semiconductor device, the semiconductor device includes: transistor cells formed along a first surface at a front side of a semiconductor portion; a drain structure between the transistor cells and a second surface of the semiconductor portion opposite to the first surface, the drain structure forming first pn junctions with body regions of the transistor cells and including an emitter layer directly adjoining the second surface; and a metal drain electrode directly adjoining the emitter layer. An integrated concentration of activated dopants along a shortest line between the metal drain electrode and a closest doped region of a charge type of the body regions is at most 1.5E13 cm?2. Further semiconductor device embodiments are described.

Abstract: An epitaxial layer is formed by epitaxy on a base substrate at a front side. From opposite to the front side, at least a portion of the base substrate is removed, wherein the base substrate is completely removed or a remnant base section has a thickness of at most 20 ?m. Dopants of a first charge type are implanted from opposite of the front side into an implant layer of the epitaxial layer. A metal drain electrode is formed opposite to the front side. At least the implant layer is heated to a temperature not higher than 500° C. The heating activates only a portion of the implanted dopants in the implant layer. After heating, an integrated concentration of activated dopants along a shortest line between the metal drain electrode and a closest doped region of a second, complementary charge type is at most 1.5E13 cm?2.

Abstract: A receiving clamp for a power tool has a clamp body with first and second end faces and a receptacle extending from the first to the second end face. The receptacle is provided to receive a guide rod of the power tool. The receptacle has a longitudinal center axis and a slot extending from the first to the second end face. The slot is open across its entire length relative to the environment. The clamp body has bending elasticity in a direction transverse to the slot so that the slot can be widened. A suspending location is arranged on the clamp body and connectable to a carrying system for the power tool. The suspending location is arranged such that, when the receiving clamp is suspended by the suspending location and the longitudinal center axis is positioned in a horizontal plane, the slot is lower than the suspending location.

Abstract: An epitaxial layer is formed by epitaxy on a base substrate at a front side. From opposite to the front side, at least a portion of the base substrate is removed, wherein the base substrate is completely removed or a remnant base section has a thickness of at most 20 ?m. Dopants of a first charge type are implanted from opposite of the front side into an implant layer of the epitaxial layer. A metal drain electrode is formed opposite to the front side. At least the implant layer is heated to a temperature not higher than 500° C. The heating activates only a portion of the implanted dopants in the implant layer. After heating, an integrated concentration of activated dopants along a shortest line between the metal drain electrode and a closest doped region of a second, complementary charge type is at most 1.5E13 cm?2.

Abstract: According to various embodiments, a transistor model for a computer based simulation of a field effect transistor may include: a first electrical network coupled between a drain node, a source node and a gate node, wherein the first electrical network is configured to represent an electrical characteristic of the field effect transistor in a forward operation; a second electrical network coupled parallel to the first electrical network and between the source node and the drain node, wherein the second electrical network is configured to represent an electrical characteristic of the field effect transistor in at least one of a commutation operation and a reverse operation; wherein the second electrical network includes: a controlled first source representing a parasitic junction of the field effect transistor; at least one controlled second source representing a charge injection dependent parasitic impedance of the field effect transistor; wherein the controlled first source and the at least one controlled sec

Abstract: The present invention relates to a method and an apparatus for separation of molecules, particularly biomolecules, in solution. Certain aspects of the invention further relate to a system for automated separation of molecules in solution. Further aspects of the invention relate to a computer program for separation of molecules in solution.