Abstract: A CMOS semiconductor device is programmed by a laser beam which causes a PN junction in a silicon substrate to be permanently altered. This produces a leakage path between a program node and a tank region in the substrate; the program node can be an input to a transistor in a CMOS circuit, for example, so this node will always hold the transistor on or off depending whether or not it has been laser-programmed. Preferably, the tank region is of opposite type compared to the substrate, so the program node is electrically isolated from the substrate in either case.

Abstract: A CMOS semiconductor device is programmed by a laser beam which causes a PN junction in a silicon substrate to be permanently altered. This produces a leakage path between a program node and a tank region in the substrate; the program node can be an input to a transistor in a CMOS circuit, for example, so this node will always hold the transistor on or off depending whether or not it has been laser-programmed. Preferably, the tank region is of opposite type compared to the substrate, so the program node is electrically isolated from the substrate in either case.

Abstract: A process for manufacturing device or die is presented which uses laser deposited leads, with a filler to bridge the gap between the die and the lead frame. The filler may be oxide, poly amide, a combination of oxide layers and poly amide layers, plastic or a plastic which has plastic coated beads of metal. The die and lead frame are placed on a heat spreader. Leads are formed over the filler material from bond pads on the lead frame to bond pads on the die. Various protective materials are placed over the die to protect it from the package. Over the protective material is another heat spreader or other device that is required to make the die function better. Typical devices are batteries, capacitors, or other die. Finally, the structure is encapsulated in a package of non-conductive material.

Abstract: A channel is formed in a wafer to fore descrite die. A portion of the wafer is heated in the channel. A portion of the heated portion is cooled to eliminate the uniform structure. The cooled portion is scribed to separate the die.

Abstract: A semiconductor die is enveloped by an ambient gas that will react to the presence of a particular wave length of light. A laser beam is focused on the edge of the die to deposit a dielectric coating. The laser beam or the die is rotated until the dielectric coating covers the entire die edge. The dielectric coating acts as a seal that is impervious to water and other contamination that can reduce the die reliability. The dielectric coating also electrically insulates the die from its surroundings.

Abstract: A ring of polycrystalline material is developed around the edge of a wafer by general heating of the wafer and localized heating with a laser beam followed by rapid cooling. The ring of polycrystalline material helps prevent wafer breakage due to thermal shock. One or more additional ring, loop or closed figures of polycrystalline material can be formed inside of said ring of polycrystalline material developed around the edge of the wafer to further reinforce the wafer.

Abstract: A ring of polycrystalline material is developed around the edge of a wafer by general heating of the wafer and localized heating with a laser beam followed by rapid cooling. The ring of polycrystalline material helps prevent wafer breakage due to thermal shock. One or more additonal ring, loop or closed figures of polycrystalline material can be formed inside of said ring of polycrystalline material developed around the edge of the wafer to further reinforce the wafer.

Abstract: Optical waveguides are used to bridge between integrated circuits on different die. The waveguide is suspended on polyamid or some other material. An optional waveguide is built which can have both active components or passive components and beam dumps. The optical waveguides allow the signal from one integrated circuit to another to travel at the speed of light. Such waveguides can be direct deposited to better than 0.2 micron accuracy to connect submicron waveguides on the integrated circuit. The use of conductive waveguides or conductive coatings to encapsulate the waveguide allows electrical signals to be passed along with the optical signal.

Abstract: A semiconductor device is programmed by a laser beam which causes a PN junction in a silicon substrate to be permanently altered. This produces a leakage path between a program node and a tank region in the substrate; the program node can be an input to a transistor in a CMOS circuit, for example, so this node will always hold the transistor on or off depending whether or not it has been laser-programmed. Preferably, the tank region is of opposite type compared to the substrate, so the program node is electrically isolated from the substrate in either case.

Abstract: An apparatus in which original documents used in an electrophotographic printing machine are temporarily stored. The apparatus is mounted on the unused space of the printing machine to organize the original documents to be processed therein. A plurality of trays are mounted pivotably on the base of the apparatus. The trays pivot from a nested position wherein they occupy a minimum amount of space on the printing machine to a substantially vertical position defining a plurality of bins for temporarily storing the original documents therein.

Abstract: A target for a laser beam consists of a plurality of closely spaced lines that causes the generation of an readily-identifiable read-out so that the laser beam can be indexed when performing laser scribing for redundant memory devices or the like.