Abstract: A specimen handling apparatus is provided and includes a body in which a bore is defined and a needle having a tip portion and a bit, which is removably insertible into the bore with the tip portion at least partially exposed, the bore and the bit each being formed such that, when the bit is inserted into the bore, the needle is forced into one of first or second rotational positions relative to a long axis thereof.

Abstract: A structure and a method for operating the same. The method includes providing a detecting structure which includes N detectors. N is a positive integer. A fabrication step is simultaneously performed on the detecting structure and M product structures in a fabrication tool resulting in a particle-emitting layer on the detecting structure. The detecting structure is different than the M product structures. The M product structures are identical. M is a positive integer. An impact of emitting particles from the particle-emitting layer on the detecting structure is analyzed after said performing is performed.

Abstract: A structure and a method for operating the same. The method includes providing a detecting structure which includes N detectors. N is a positive integer. A fabrication step is simultaneously performed on the detecting structure and M product structures in a fabrication tool resulting in a particle-emitting layer on the detecting structure. The detecting structure is different than the M product structures. The M product structures are identical. M is a positive integer. An impact of emitting particles from the particle-emitting layer on the detecting structure is analyzed after said performing is performed.

Abstract: A semiconductor structure having silicon dioxide layers of different thicknesses is fabricated by forming a sacrificial silicon dioxide layer on the surface of a substrate; implanting nitrogen ions through the sacrificial silicon dioxide layer into first areas of the semiconductor substrate; implanting chlorine and/or bromine ions through the sacrificial silicon dioxide layer into second areas of the semiconductor substrate where silicon dioxide having the highest thickness is to be formed; removing the sacrificial silicon dioxide layer; and then growing a layer of silicon dioxide on the surface of the semiconductor substrate. The growth rate of the silicon dioxide will be faster in the areas containing the chlorine and/or bromine ions and therefore the silicon dioxide layer will be thicker in those regions as compared to the silicon dioxide layer in the regions not containing the chlorine and/or bromine ions.

Abstract: A semiconductor structure having silicon dioxide layers of different thicknesses is fabricated by forming a sacrificial silicon dioxide layer on the surface of a substrate; implanting nitrogen ions through the sacrificial silicon dioxide layer into first areas of the semiconductor substrate; implanting chlorine and/or bromine ions through the sacrificial silicon dioxide layer into second areas of the semiconductor substrate where silicon dioxide having the highest thickness is to be formed; removing the sacrificial silicon dioxide layer; and then growing a layer of silicon dioxide on the surface of the semiconductor substrate. The growth rate of the silicon dioxide will be faster in the areas containing the chlorine and/or bromine ions and therefore the silicon dioxide layer will be thicker in those regions as compared to the silicon dioxide layer in the regions not containing the chlorine and/or bromine ions.