Abstract: The invention relates to a nonwoven fabric towel comprising about 25 to 75% by weight a first fiber comprising a polyester or polyester co-polymer staple fiber having a staple length of between 3 and 6 inches and a surface area per unit length of between approximately 0.2 micrometer2/cm to 1.2 micrometer2/cm, about 25 to 50% by weight a second fiber comprising a multi-segment splitable staple fiber comprising a first component being a polyester or polyester co-polymer component and a second component being a polyamide component or a polyester or polyester co-polymer incompatible with the first component, wherein weight ratio of the first component and the second component is between 40:60 and 80:20, and wherein the first component and the second component have a denier per staple filament of between 0.05 and 0.5, wherein the nonwoven fabric towel is bonded with a stitches of a bulkable yarn, and wherein at least the first or second fiber comprises a hydrophilic surface treatment.

Abstract: A silicon-on-insulator (SOI) field-effect transistor (FET) and a method for making the same are disclosed. The SOI FET is characterized by a source which extends only partially (e.g. about half-way) through the active layer wherein the transistor is formed. Additionally, a minimal-area body tie contact is provided with a short-circuit electrical connection to the source for reducing floating body effects. The body tie contact improves the electrical characteristics of the transistor and also provides an improved single-event-upset (SEU) radiation hardness of the device for terrestrial and space applications. The SOI FET also provides an improvement in total-dose radiation hardness as compared to conventional SOI transistors fabricated without a specially prepared hardened buried oxide layer. Complementary n-channel and p-channel SOI FETs can be fabricated according to the present invention to form integrated circuits (ICs) for commercial and military applications.