Abstract: A method for thermally processing a substrate provides a target substrate temperature and generates a move profile of the substrate within a thermal processing system. An amount of heat is provided to the substrate, and one or more temperatures associated with one or more respective locations on the substrate are measured. A predicted temperature profile is further generated, wherein a predicted temperature of the substrate is based on the amount of heat provided and the one or more measured temperatures. The amount of heat provided to the substrate is further regulated, based on the predicted temperature profile, wherein the substrate is thermally processed generally according to the intended substrate temperature profile. The amount of heat provided to the substrate can be further regulated by controlling a position of the substrate within the thermal processing system.

Abstract: A charge neutralization monitor monitors the operation of a charge neutralization system for an ion implantation system. The charge neutralization system produces neutralizing electrons in a region through which an ion beam passes in treating one or more workpieces. The charge neutralization monitor applies a suitable voltage to a target electrode positioned to collect neutralizing electrons produced by the charge neutralization system. The charge neutralization monitor then determines the available neutralizing electron current that may be produced by the charge neutralization system by monitoring the current flowing through the target electrode.