Patents by Inventor Paul J. Augustine

Paul J. Augustine has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power sensor for RF power amplifier
    Patent number: 6528983
    Abstract: A system for sensing RF amplifier output power includes an amplifier transistor and a sampling transistor that is physically smaller than the amplifier transistor. The sampling transistor is configured to sample the same RF input signal that is amplified by the amplifier transistor. A bias circuit associated with the transistors includes a selection of components based upon operating parameters as well as actual physical sizes of the transistors. The selection of component values in association with transistor sizes is used to enable generation of a current sensing signal that is proportional to the power level of the RF output signal generated by the amplifier transistor.
    Type: Grant
    Filed: November 2, 2001
    Date of Patent: March 4, 2003
    Assignee: RF Micro Devices, Inc.
    Inventor: Paul J. Augustine
  • RF power amplifier output power sensor
    Patent number: 6329809
    Abstract: A system for sensing RF amplifier output power includes an amplifier transistor and two sampling transistors. The two sampling transistors are physically smaller than the amplifier transistor, and are preferably the same size. The first sampling transistor is configured to sample the same RF input signal that is amplified by the amplifier transistor. The second sampling transistor is configured to receive and amplify only a bias network signal. The bias network associated with the transistors includes a selection of components based upon operating parameters as well as actual physical sizes of the transistors. The selection of component values in association with transistor sizes is used to enable generation of a current sensing signal that is proportional to the power level of the RF output signal generated by the amplifier transistor.
    Type: Grant
    Filed: January 27, 2000
    Date of Patent: December 11, 2001
    Assignee: RF Micro Devices, Inc.
    Inventors: David C. Dening, Paul J. Augustine
  • Power sensor for RF power amplifier
    Patent number: 6307364
    Abstract: A system for sensing RF amplifier output power includes an amplifier transistor and a sampling transistor that is physically smaller than the amplifier transistor. The sampling transistor is configured to sample the same RF input signal that is amplified by the amplifier transistor. A bias circuit associated with the transistors includes a selection of components based upon operating parameters as well as actual physical sizes of the transistors. The selection of component values in association with transistor sizes is used to enable generation of a current sensing signal that is proportional to the power level of the RF output signal generated by the amplifier transistor.
    Type: Grant
    Filed: August 27, 1999
    Date of Patent: October 23, 2001
    Assignee: RF Micro Devices, Inc.
    Inventor: Paul J. Augustine
  • Integrated RF power sensor that compensates for bias changes
    Patent number: 6265943
    Abstract: A system for controlling a bias circuit by sensing RF amplifier output power and compensating for a dominating quiescent bias current includes an amplifier transistor and two sampling transistors. The two sampling transistors are physically smaller than the amplifier transistor, and are preferably the same size. The first sampling transistor is configured to sample the same RF input signal that is amplified by the amplifier transistor. The second sampling transistor is configured to receive and amplify only a bias network signal. The bias network associated with the transistors includes a selection of components based upon operating parameters as well as actual physical sizes of the transistors. The selection of component values in association with transistor sizes is used to enable generation of a current sensing signal that is proportional to the power level of the RF output signal generated by the amplifier transistor.
    Type: Grant
    Filed: January 27, 2000
    Date of Patent: July 24, 2001
    Assignee: RF Micro Devices, Inc.
    Inventors: David C. Dening, Paul J. Augustine