Abstract: An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode layer. The conductive electrode has been etched to define an opening thereby exposing a portion of the cathode layer.

Abstract: An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Abstract: An electronic device of a preferred embodiment includes a tip emitter formed in a well defined in a substrate. An extractor disposed about the well extracts emissions from the tip emitter. A wide lens is spaced apart from the extractor for focusing the emissions through an opening defined the wide lens. The opening has a diameter greater than a diameter of the well. An aperture is disposed between the extractor and the wide lens.

Abstract: An electronic device of a preferred embodiment includes a tip emitter formed in a well defined in a substrate. An extractor disposed about the well extracts emissions from the tip emitter. A wide lens is spaced apart from the extractor for focusing the emissions through an opening defined the wide lens. The opening has a diameter greater than a diameter of the well. An aperture is disposed between the extractor and the wide lens.

Abstract: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Abstract: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Abstract: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Abstract: An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Abstract: An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode layer. The conductive electrode has been etched to define an opening thereby exposing a portion of the cathode layer.

Abstract: An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Abstract: An electron lens is used for focusing electrons from a cathode to an anode. The lens includes a first conductive layer with a first opening at a first distance from the cathode. The first conductive layer is held at a first voltage. The lens also includes a second conductive layer with a second opening at a second distance from the first conductive layer and a third distance from the anode. The second conductive layer is held at a second voltage substantially equal to the voltage of the anode. The first and second openings are chosen based on the first voltage, the second voltage, the first distance, the second distance and the third distance. The opening focuses the electrons emitted from the cathode onto the anode to a spot size preferably less than 40 nanometers. The force created between the cathode and anode is minimized by the structure of the lens.

Abstract: An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode layer. The conductive electrode has been etched to define an opening thereby exposing a portion of the cathode layer.

Abstract: A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etched to expose the flat cathode emission surface.

Abstract: An electrical device includes a plurality of integrated circuits respectively fabricated in a first substrate bonded to a second substrate by a bond that deforms above, but not below, a deformation condition. The deformation condition can be a predetermined pressure from opposing surfaces on the first and second substrates or it can be a predetermined combination of temperature and pressure from opposing surfaces on the first and second substrates.

Abstract: An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode layer. The conductive electrode has been etched to define an opening thereby exposing a portion of the cathode layer.

Abstract: An electron lens is used for focusing electrons from a cathode to an anode. The lens includes a first conductive layer with a first opening at a first distance from the cathode. The first conductive layer is held at a first voltage. The lens also includes a second conductive layer with a second opening at a second distance from the first conductive layer and a third distance from the anode. The second conductive layer is held at a second voltage substantially equal to the voltage of the anode. The first and second openings are chosen based on the first voltage, the second voltage, the first distance, the second distance and the third distance. The opening focuses the electrons emitted from the cathode onto the anode to a spot size preferably less than 40 nanometers. The force created between the cathode and anode is minimized by the structure of the lens.

Abstract: The photoresist barrier layer of an inkjet printer printhead is processed to enable channels narrower than a predetermined width in the barrier layer to be created without blockage. Relatively large volumes of photoresist which form a wall of the channel are exposed to a partial exposure of electromagnetic radiation to yield a reduced concentration of photoresist barrier layer in the large volume.

Abstract: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Abstract: An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Abstract: The photoresist barrier layer of an inkjet printer printhead is processed to enable channels narrower than a predetermined width in the barrier layer to be created without blockage. Relatively large volumes of photoresist which form a wall of the channel are exposed to a partial exposure of electomagnetic radiation to yield a reduced concentration of photoresist barrier layer in the large volume.