Abstract: Coating compositions comprise: a curable compound comprising: a core chosen from a C6 carbocyclic aromatic ring, a C2-5 heterocyclic aromatic ring, a C9-30 fused carbocyclic aromatic ring system, a C4-30 fused heterocyclic aromatic ring system, C1-20 aliphatic, and C3-20 cycloaliphatic, and three or more substituents of formula (1) wherein at least two substituents of formula (1) are attached to the aromatic core; provided that no substituents of formula (1) are in an ortho position to each other on the same aromatic ring of the core; a polymer; and one or more solvents, wherein the total solvent content is from 50 to 99 wt % based on the coating composition.

Abstract: A photoactive compound including an organic cation; and an anion represented by Formula (1): wherein X is an organic group; Y1 and Y2 are each independently a non-hydrogen substituent; Y1 and Y2 together optionally form a ring; Z2 is hydrogen, halogen, substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C3-30 heterocycloalkyl, substituted or unsubstituted C6-50 aryl, substituted or unsubstituted C7-50 arylalkyl, substituted or unsubstituted C7-50 alkylaryl, substituted or unsubstituted C6-50 aryloxy, substituted or unsubstituted C3-30 heteroaryl, substituted or unsubstituted C4-30 alkylheteroaryl, substituted or unsubstituted C4-30 heteroarylalkyl, or substituted or unsubstituted C3-30 heteroaryloxy; Z2 optionally further comprises one or more divalent linking groups as part of its structure; Z2 and one of Y1 or Y2 together optionally form a ring; X and Z2 together optionally form a ring; and X and one of Y1 or Y2 together optionally form a

Abstract: Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.

Abstract: Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.

Abstract: A method of forming a pattern on a substrate, the method including: forming a photoresist underlayer over a surface of the substrate, the photoresist underlayer formed from a composition including a polymer having a glass transition temperature of less than 110° C. and a solvent; subjecting the photoresist underlayer to a metal precursor, where the metal precursor infiltrates a free volume of the photoresist underlayer; and exposing the metal precursor-treated photoresist underlayer to an oxidizing agent to provide a metallized photoresist underlayer.

Abstract: A method of forming a pattern on a substrate, the method including: forming a photoresist underlayer over a surface of the substrate, wherein the photoresist underlayer is formed from a composition comprising a polymer and a solvent, and the photoresist underlayer has a carbon content of greater than 47 at %; subjecting the photoresist underlayer to a a metal precursor, where the metal precursor infiltrates a free volume of the photoresist underlayer; and exposing the metal precursor-treated photoresist underlayer to an oxidizing agent to provide a metallized photoresist underlayer.

Abstract: Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising one or more condensed polymers having an organic polymer chain having pendently-bound moieties having an acidic proton and a pKa in water from ?5 to 13 and having pendently-bound siloxane moieties are provided.

Abstract: Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.

Abstract: Coating compositions comprise: a curable compound comprising: a core chosen from a C6 carbocyclic aromatic ring, a C2-5 heterocyclic aromatic ring, a C9-30 fused carbocyclic aromatic ring system, a C4-30 fused heterocyclic aromatic ring system, C1-20 aliphatic, and C3-20 cycloaliphatic, and three or more substituents of formula (1) wherein at least two substituents of formula (1) are attached to the aromatic core; and wherein: Ar1 is chosen from a C6 carbocyclic aromatic ring, a C2-5 heterocyclic aromatic ring, a C9-30 fused carbocyclic aromatic ring system, and a C4-30 fused heteroocyclic aromatic ring system; Z is a substituent independently chosen from OR1, protected hydroxyl, carboxyl, protected carboxyl, SR1, protected thiol, —O—C(?O)—C1-6 alkyl, halogen, and NHR2; wherein each R1 is independently chosen from H, C1-10 alkyl, C2-10 unsaturated hydrocarbyl, and C5-30 aryl; each R2 is independently chosen from H, C1-10 alkyl, C2-10 unsaturated hydrocarbyl, C5-30 aryl, C(?O)—R1, and S(?O)2—R1; x is an in

Abstract: Compounds having three or more alkynyl moieties substituted with an aromatic moiety having one or more of certain substituents are useful in forming underlayers useful in semiconductor manufacturing processes.

Abstract: A resist underlayer composition including a polymer having a polymer backbone and a substituted or unsubstituted fullerene group pendant to the polymer backbone, and a solvent in an amount of from 50 to 99.9 weight % based on the total resist underlayer composition.

Abstract: Acid generators comprising a carbocyclic aryl or heteroaromatic group substituted with at least one acetate moiety are provided. These acid generators are particularly useful as a photoresist composition component.

Abstract: A resist underlayer composition including a polyarylene ether, an additive polymer that is different from the polyarylene ether, and a solvent, wherein the additive polymer includes an aromatic or heteroaromatic group having at least one protected or free functional group selected from hydroxy, thiol, and amino.

Abstract: Compositions for forming thin, silicon-containing antireflective coatings and methods of using these compositions in the manufacture of electronic devices are provided. Silicon-containing antireflective coatings formed from the these compositions can be easily removed during processing without the need for a separate removal step.

Abstract: Compounds having three or more alkynyl moieties substituted with an aromatic moiety having one or more of certain substituents are useful in forming underlayers useful in semiconductor manufacturing processes.

Abstract: Acid generator compounds are provided that are particularly useful as a photoresist composition component. In one preferred aspect, photoresists are provided that comprise (i) a polymer; (ii) a first onium salt acid generator that produces a first acid upon exposure of the photoresist composition to activating radiation; and (iii) a second onium salt acid generator that 1) comprises a covalently bound acid-labile moiety and 2) produces a second acid upon exposure of the photoresist composition to activating radiation, wherein the first acid and second acid have pKa values that differ by at least 0.5.

Abstract: Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.

Abstract: Acid generator compounds are provided that are particularly useful as a photoresist composition component. In one preferred aspect, cyclic sulfonium salt and photoresist compositions that comprise such compounds are provided. In another preferred aspect, acid generator compounds are provided that comprise one or more covalently linked acid-labile moieties, particularly ester-containing acid-labile moieties.

Abstract: Compositions for forming thin, silicon-containing antireflective coatings and methods of using these compositions in the manufacture of electronic devices are provided. Silicon-containing antireflective coatings formed from the these compositions can be easily removed during processing without the need for a separate removal step.

Abstract: Acid generator compounds are provided that are particularly useful as a photoresist composition component. In one preferred aspect, photoresists are provided that comprise (i) a polymer; (ii) a first onium salt acid generator that produces a first acid upon exposure of the photoresist composition to activating radiation; and (iii) a second onium salt acid generator that 1) comprises a covalently bound acid-labile moiety and 2) produces a second acid upon exposure of the photoresist composition to activating radiation, wherein the first acid and second acid have pKa values that differ by at least 0.5.