Patents by Inventor Paul Kraatz

Paul Kraatz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5173443
    Abstract: Methods are disclosed for making semiconductor windows which are transparent to light in the infrared range which have good electrical conductivity and are formed of a substrate material (11) having a semiconductor coating (14) having a dopant included therein. The coating is diffused, grown or deposited on one surface of the substrate and is controlled to obtain both low electrical resistivity and high infrared transmissivity. The coating can be formed of the same material as the substrate or can be a different material. Windows having particular thermal properties are formed utilizing zinc selenide and zinc sulfide as the substrate.
    Type: Grant
    Filed: June 27, 1990
    Date of Patent: December 22, 1992
    Assignee: Northrop Corporation
    Inventors: V. Warren Biricik, James M. Rowe, Paul Kraatz, John W. Tully, Wesley J. Thompson, Rudolph W. Modster
  • Patent number: 4939043
    Abstract: A semiconductor window which is transparent to light in the infrared range and which has good electrical conductivity is formed of a substrate material having a semiconductor coating having a dopant included therein. The coating is diffused, grown or deposited on one surface of the substrate and is controlled to obtain both low electrical resistivity and high infrared transmissivity. The coating can be formed of the same material as the substrate or can be a different material. Windows having particular thermal properties are formed utilizing zinc selenide and zinc sulfide as the substrate.
    Type: Grant
    Filed: October 14, 1988
    Date of Patent: July 3, 1990
    Assignee: Northrop Corporation
    Inventors: V. Warren Biricik, James M. Rowe, Paul Kraatz, John W. Tully
  • Patent number: 4778731
    Abstract: A semiconductor window which is transparent to light in the infrared range and which has good electrical conductivity is formed with a substrate of semi-conductor material which has a conduction modifying dopant diffused, grown or deposited on one surface thereof to a substantial depth so that a layer thereof exhibits reduced resistance to a value below 10 ohms/square. Anti-reflection dielectric layers are stacked on both outer surfaces thereof. The dielectric substrate may be of silicon, germanium or gallium arsenide depending on the transparency bandwidth of interest. The thickness of the substrate and the doping of the surface thereof is closely controlled to obtain both low electrical resistivity and high optical transmissivity.
    Type: Grant
    Filed: February 13, 1987
    Date of Patent: October 18, 1988
    Assignee: Northrop Corporation
    Inventors: Paul Kraatz, James M. Rowe, John W. Tully, Vahram W. Biricik, Wesley J. Thompson, Rudolph W. Modster
  • Patent number: 4608272
    Abstract: A laser or other light beam is directed onto an optical substrate while an optical coating is being vacuum deposited thereon. The laser has a wavelength at or near that at which a reduced absorptance of the coating is desired. In one embodiment, the substrate is heated electrically. Thin film optical coatings having a substantially lowered absorptance are made in this manner.
    Type: Grant
    Filed: October 20, 1980
    Date of Patent: August 26, 1986
    Assignee: Northrop Corporation
    Inventors: James M. Rowe, Paul Kraatz, Samuel J. Holmes