Abstract: A semiconductor arrangement is disclosed. One embodiment includes a first semiconductor layer including a first and second component zone that form a pn-junction or a Schottky-junction. A second semiconductor layer includes a drift control zone adjacent to the second component zone. A dielectric layer separates the first semiconductor layer from the second semiconductor layer. A rectifying element is coupled between the drift control zone and the second component zone.

Abstract: A semiconductor arrangement is disclosed. One embodiment includes a first semiconductor layer including a first and second component zone that form a pn-junction or a Schottky-junction. A second semiconductor layer includes a drift control zone adjacent to the second component zone. A dielectric layer separates the first semiconductor layer from the second semiconductor layer. A rectifying element is coupled between the drift control zone and the second component zone.

Abstract: A semiconductor component including a lateral transistor component is disclosed. One embodiment provides an electrically insulating carrier layer. A first and a second semiconductor layer are arranged on above another and are separated from another by a dielectric layer. The first semiconductor layer includes a polycrystalline semiconductor material, an amorphous semiconductor material or an organic semiconductor material. In the first semiconductor layer: a source zone, a body zone, a drift zone and a drain zone are provided. In the second semiconductor layer; a drift control zone is arranged adjacent to the drift zone, including a control terminal at a first lateral end for applying a control potential, and is coupled to the drain zone via a rectifying element at a second lateral end. A gate electrode is arranged adjacent to the body zone and is dielectrically insulated from the body zone by a gate dielectric layer.

Abstract: A method of producing a semiconductor element in a substrate includes forming a plurality of micro-cavities in a substrate, creating an amorphization of the substrate to form crystallographic defects and a doping of the substrate with doping atoms, depositing an amorphous layer on top of the substrate, and annealing the substrate, such that at least a part of the crystallographic defects is eliminated using the micro-cavities. The semiconductor element is formed using the doping atoms.

Abstract: A semiconductor component including a lateral transistor component is disclosed. One embodiment provides an electrically insulating carrier layer. On the carrier layer a first and a second semiconductor layer are arranged on above another and are separated from another by a dielectric layer and from which at least the first semiconductor layer includes a polycrystalline semiconductor material, an amorphous semiconductor material or an organic semiconductor material. In the first semiconductor layer: a source zone, a body zone, a drift zone and a drain zone are provided. In the second semiconductor layer; a drift control zone is arranged adjacent to the drift zone, including a control terminal at a first lateral end for applying a control potential, and is coupled to the drain zone via a rectifying element at a second lateral end. A gate electrode is arranged adjacent to the body zone and is dielectrically insulated from the body zone by a gate dielectric layer.

Abstract: A method of producing a semiconductor element in a substrate includes forming a plurality of micro-cavities in a substrate, creating an amorphization of the substrate to form crystallographic defects and a doping of the substrate with doping atoms, depositing an amorphous layer on top of the substrate, and annealing the substrate, such that at least a part of the crystallographic defects is eliminated using the micro-cavities. The semiconductor element is formed using the doping atoms.