Abstract: A method for fabricating silicon nanowires. The method includes the steps of: depositing a silicon nitride layer on a silicon on insulator (SOI) starting wafer; patterning the silicon nitride to define at least one silicon microbar; etching the SOI starting wafer to expose the at least one silicon microbar, wherein the at least one microbar is surrounded by a raised perimeter; growing a silicon oxide layer on the raised perimeter of the at least one microbar; and etching a portion of the at least one silicon microbar to produce at least one silicon nanowire adjacent the silicon oxide layer.

Abstract: A method of performing magnetic annealing of a ferromagnetic thin film applied to a substrate includes applying an oscillating magnetic field to the ferromagnetic thin film to induce a current therein and heat the ferromagnetic thin film. A directional magnetic field is applied to the ferromagnetic thin film at the same time as the ferromagnetic thin film is heated, and the ferromagnetic thin film is allowed to acquire a desired magnetic characteristic, and then the oscillating magnetic field is removed and the ferromagnetic thin film is allowed to cool.

Abstract: A method of performing regional heating of a system having a substrate. The method may include applying a thin film to the system, and controllably energizing a coil positioned near the thin film. The energized coils thereby generate a magnetic flux. The method further includes inducing a current in the thin film with the magnetic flux thereby heating the system.

Abstract: A method of performing regional heating of a system having a substrate. The method may include applying a thin film to the system, and controllably energizing a coil positioned near the thin film. The energized coils thereby generate a magnetic flux. The method further includes inducing a current in the thin film with the magnetic flux thereby heating the system.

Abstract: A capacitively sensed micromachined component includes an electrically insulative substrate (120) having a first side (121) and a second side (122) opposite the first side. The component also includes a first layer (130) adjacent to the second side of the electrically insulative substrate where at least a first portion of the first layer located adjacent to the second side of the electrically insulative substrate is infra-red light absorbing and is also electrically conductive. The component further includes a diffusion and chemical barrier layer (240) encapsulating the first layer and the electrically insulative substrate. The component still further includes a capacitively sensed micromachined device (310) on the diffusion and chemical barrier layer.

Abstract: A sensor has an electrode (120) that is movable along three mutually perpendicular axes (10, 11, 12). The sensor also has stationary over-travel limiting structures that restrict the movement of the electrode (120) along the three axes (10, 11, 12).

Abstract: A sensor has an electrode (120) that is movable along three mutually perpendicular axes (10, 11, 12). The sensor also has stationary over-travel limiting structures that restrict the movement of the electrode (120) along the three axes (10, 11, 12).

Abstract: A semiconductor device (50) has a sensing element (30) and a transistor (40). The sensing element (30) is formed in a cavity (11) in a substrate (10). The sensing element (30) is formed in part using an epitaxial deposition process that fills the cavity (11) with a conductive material (18) such as polysilicon. A dielectric layer (17) is used to electrically isolate the sensing element (30) from the substrate (10).