Abstract: Methods are described for obtaining digital data for determining, shaping or testing a semiconductor or anisotropic device or materials under test or manufacture. Optical interferometric techniques can sense a wide region, such as that passing through or reflected off a semiconductor material, which can then be analyzed. In this manner, various characteristics of the resultant transmitted or reflected probing beam, herein called the “object wave,” are recorded in the resultant interference pattern between the object wave and the reference beam. Likewise, when the semiconductor material, such as an integrated circuit, is stressed by applying a voltage therein by energizing a circuit fabricated therein, the same light will reflect or otherwise pass through the semiconductor material, while being affected by the changes imposed upon or acting within the interior structures or interior surfaces by an applied voltage or signal, or by an incident external stress, thereby resulting in a different pattern.

Abstract: An interferometric holographic instrument enables the generation of digital data for testing and enabling 2-dimensional and 3-dimensional analysis of “live” and real-time semiconductor or anisotropic devices and materials. The digitally recorded interferometric data can be displayed, stored or connected to a live data stream for transmission to digital processing devices. A digital electric processor or analyzer connected to the recording device, or live data stream, enables the interferometric data to be utilized to test, develop, and shape semiconductor and anisotropic microelectronic processing, wireless and microwave devices.

Abstract: The Fast Fourier transform describes functions into different dimensions or coordinates such as Cartesian to spherical. For example, a function could be represented in the domains of time and frequency. The concept of the 3-D FFT has the same form as the mathematical representation of the 2-D FFT utilizing a 1-D FFT. This technique is essentially a spatial filtering operation in which the hologram functions as a matched filter. It has been applied here, to function as 4-D FFT by adding the dimension of time to recognize the presence of a specific electronic circuit and detect the moment when specific voltage levels or signals are present within or acting upon, the circuit or device under test and development. Any dynamic changes in the test object from ideal or recorded conditions, such as by defects in the device under test's circuitry or from prescribed voltage or signal induced operating parameters, will not result in the reconstruction of the desired object wave or holographic image.

Abstract: Improved methods and systems for inspection imaging for holographic or interferometric semiconductor test and evaluation through all phases of device development and manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for testing and evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material are provided in which an enhanced imaging method provides continuous and varying the magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways and imaging devices. Analysis of one or more holographic interference patterns displays internal and external stresses and the various effects of such stresses upon the operating characteristics of features within the features, interior structures or within the internal surfaces of the semiconductor device at any stage of development or manufacture.

Abstract: In decreasing the electron beam duration required for increased time resolution, the average beam current decreases, degrading measurement sensitivity and limiting the spatial and time resolution of electron beam and ion beam devices. Optical to optical measurements using two imaging devices permits non-invasive or non-destructive enhancements permits enhanced spatial and time measurements and enables a new regime of internal device and process evaluation and quality control in integrated circuit (IC) manufacture, at every stage from the initial wafer to the point at which the wafer is diced into individual ICs.

Abstract: Improved methods and systems for inspection imaging for holographic or interferometric semiconductor test and evaluation through all phases of device development and manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for testing and evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material are provided in which an enhanced imaging method provides continuous and varying the magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways and imaging devices. Analysis of one or more holographic interference patterns displays internal and external stresses and the various effects of such stresses upon the operating characteristics of features within the features, interior structures or within the internal surfaces of the semiconductor device at any stage of development or manufacture.

Abstract: Improved methods and systems for inspection imaging for holographic or interferometric semiconductor test and evaluation through all phases of device development and manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for testing and evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material are provided in which an enhanced imaging method provides continuous and varying the magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways and imaging devices. Analysis of one or more holographic interference patterns displays internal and external stresses and the various effects of such stresses upon the operating characteristics of features within the features, interior structures or within the internal surfaces of the semiconductor device at any stage of development or manufacture.

Abstract: Methods and systems for resolving and determining sub-wavelength sized features and stresses by using infrared optical and thermal wavelength probing for holographic or interferometric evaluation and testing for all phases of semiconductor device development and manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for testing and evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material in which an enhanced imaging method provides continuous and varying magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways of varying optical paths and imaging devices.

Abstract: Analysis and characterization of semiconductor and free-metal devices using a plurality of “live” and stored interference patterns or data detected to determine or generate two-dimensional or three-dimensional information of at least one internal stress or signal, or determining the effects thereof of internal or external stresses acting upon or within the electrical signals applied to a device under test or evaluation having exterior surfaces, interior structures, electronic features as well as determining the effects thereof of chemicals, bioelectric materials, or substances, placed adjacent to the surface of the devices under test.

Abstract: In decreasing the electron beam duration required for increased time resolution, the average beam current decreases, degrading measurement sensitivity and limiting practical systems to a time resolution of several hundred picoseconds. Optical non-invasive or non-destructive enhancements permits femto-second measurements and a new regime of internal device and process evaluation and quality control in integrated circuit (IC) manufacture, at every stage from the initial wafer to the point at which the wafer is diced into individual ICs.

Abstract: Methods and systems for resolving and determining sub-wavelength sized features and stresses by using infrared optical and thermal wavelength probing for holographic or interferometric evaluation and testing for all phases of semiconductor device development and manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for testing and evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material in which an enhanced imaging method provides continuous and varying magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways of varying optical paths and imaging devices.

Abstract: Analysis and characterization of semiconductor and free-metal devices using a plurality of “live” and stored interference patterns or data detected to determine or generate two-dimensional or three-dimensional information of at least one internal stress or signal, or determining the effects thereof of internal or external stresses acting upon or within the electrical signals applied to a device under test or evaluation having exterior surfaces, interior structures, electronic features as well as determining the effects thereof of chemicals, bioelectric materials, or substances, placed adjacent to the surface of the devices under test.

Abstract: Improved methods and systems for inspection imaging for holographic or interferometric semiconductor test and evaluation through all phases of device development and manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for testing and evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material are provided in which an enhanced imaging method provides continuous and varying the magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways and imaging devices. Analysis of one or more holographic interference patterns displays internal and external stresses and the various effects of such stresses upon the operating characteristics of features within the features, interior structures or within the internal surfaces of the semiconductor device at any stage of development or manufacture.

Abstract: An improved optical infrared and ultraviolet imaging system including a first imaging device that is sensitive to a light which creates a photocurrent or changes in electric field or stresses within the first imaging device and a second infrared imaging device that is illuminated by light incident to the first imaging device which is reflected to the second imaging device which images optical changes in phase or polarization or amplitude or birefringence within the first imaging device.

Abstract: An improved optical infrared and ultraviolet imaging and testing system including a primary imaging device with a target portion and a secondary imaging device for determining the presence and nature of various external (e.g. magnetic field, microwave, bioelectric or incident infrared, thermal, ultraviolet, radiation, or x-rays) or internal stresses (e.g., photo-generated carriers or photo-induced resistance) or other conditions acting upon the primary detection device which are optically enhanced for detection by the secondary detection device or devices.

Abstract: Improved methods and systems for inspection imaging for holographic or interferometric semiconductor test and evaluation through all phases of device development and manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for testing and evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material are provided in which an enhanced imaging method provides continuous and varying the magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways and imaging devices. Analysis of one or more holographic interference patterns displays internal and external stresses and the various effects of such stresses upon the operating characteristics of features within the features, interior structures or within the internal surfaces of the semiconductor device at any stage of development or manufacture.

Abstract: Improved methods and systems for inspection imaging for holographic or interferometric semiconductor test and evaluation through all phases of manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material are provided in which an enhanced imaging method provides continuous and varying of the magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways and imaging devices. Analysis of one or more holographic interference patterns displays internal and external stresses and the various effects of such stresses upon the operating characteristics of features within the features, interior structures, or internal surfaces of the semiconductor material or wafer under test.

Abstract: An improved condition testing system and method integrated into microelectronic circuits includes a structure including a semiconductor material with a target portion and a second portion for determining the presence and nature of various external (e.g. magnetic field, microwave, bioelectric or incident radiation) or internal stresses (e.g. binary circuit-state or analog signal recognition) or conditions acting upon the material. The target portion has a first feature when at least one of the following occurs: an external force is received by the second portion of the structure and an internal condition occurs in the target portion. The system and method further has a test grating determined and shaped and located to produce a first optical interference pattern when the target portion and the grating are exposed to non-invasive illumination and when the target portion has the first feature.

Abstract: Improved methods and systems for inspection imaging for holographic or interferometric semiconductor test and evaluation through all phases of manufacture. Specifically, systems and methods for extending the range of optical holographic interferometric inspection for evaluating microelectronic devices and the interplay of electromagnetic signals and dynamic stresses to the semiconductor material are provided in which an enhanced imaging method provides continuous and varying magnification over a plurality of interleaved optical pathways and imaging devices. Analysis of one or more holographic interference patterns displays internal and external stresses and the various effects of such stresses upon the operating characteristics of features within the feature or interior structures or internal surfaces of the semiconductor material or wafer.

Abstract: A method for optically testing semiconductor devices or wafers using a holographic optical interference system with an infrared or thermal light source providing a light beam of coherent wavelength with a wavelength to which the semiconductor material is transparent, splitting the light beam into a reference beam and an object beam, imposing the object beam on the semiconductor material to generate a reflected object beam reflected from interior structures of the semiconductor material, adjusting the angle of the reference beam relative to the object beam between a plurality of angles with the semiconductor material being a different state for each angle of the reference beam, imposing the reflected object beam and the reference beam onto a detection device to create a plurality of interference patterns, one for each of the reference beam angles, and comparing the interference patterns to one another to determine and display characteristics within the semiconductor material.