Patents by Inventor Paul Loscutoff

Paul Loscutoff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140166094
    Abstract: Methods of fabricating solar cell emitter regions using etch resistant films and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a plurality of regions of N-type doped silicon nano-particles on a first surface of a substrate of the solar cell. A P-type dopant-containing layer is formed on the plurality of regions of N-type doped silicon nano-particles and on the first surface of the substrate between the regions of N-type doped silicon nano-particles. A capping layer is formed on the P-type dopant-containing layer. An etch resistant layer is formed on the capping layer. A second surface of the substrate, opposite the first surface, is etched to texturize the second surface of the substrate. The etch resistant layer protects the capping layer and the P-type dopant-containing layer during the etching.
    Type: Application
    Filed: December 18, 2012
    Publication date: June 19, 2014
    Inventors: Paul Loscutoff, Peter J. Cousins
  • Publication number: 20140166093
    Abstract: Methods of fabricating solar cell emitter regions using N-type doped silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a plurality of regions of N-type doped silicon nano-particles on a first surface of a substrate of the solar cell. A P-type dopant-containing layer is formed on the plurality of regions of N-type doped silicon nano-particles and on the first surface of the substrate between the regions of N-type doped silicon nano-particles. At least a portion of the P-type dopant-containing layer is mixed with at least a portion of each of the plurality of regions of N-type doped silicon nano-particles.
    Type: Application
    Filed: December 18, 2012
    Publication date: June 19, 2014
    Inventors: Paul Loscutoff, Peter J. Cousins, Steven Edward Molesa, Ann Waldhauer
  • Publication number: 20140048133
    Abstract: A method of manufacturing solar cells is disclosed. The method comprises depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material, and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate.
    Type: Application
    Filed: October 23, 2013
    Publication date: February 20, 2014
    Inventors: Kahn C. Wu, Steven M. Kraft, Paul Loscutoff, Steven Edward Molesa
  • Patent number: 8586397
    Abstract: A method of manufacturing solar cells is disclosed. The method comprises depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material, and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate.
    Type: Grant
    Filed: September 30, 2011
    Date of Patent: November 19, 2013
    Assignee: SunPower Corporation
    Inventors: Kahn C. Wu, Steven M. Kraft, Paul Loscutoff, Steven Edward Molesa
  • Publication number: 20130160833
    Abstract: A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.
    Type: Application
    Filed: December 22, 2011
    Publication date: June 27, 2013
    Inventors: Paul LOSCUTOFF, Steve MOLESA, Taeseok KIM
  • Publication number: 20130081677
    Abstract: Dopant ink compositions and methods of fabricating solar cells there from are described. A dopant ink composition may include a cross-linkable matrix precursor, a bound dopant species, and a solvent. A method of fabricating a solar cell may include delivering a dopant ink composition to a region above a substrate. The dopant ink composition includes a cross-linkable matrix precursor, a bound dopant species, and a solvent. The method also includes baking the dopant ink composition to remove a substantial portion of the solvent of the dopant ink composition, curing the baked dopant ink composition to cross-link a substantial portion of the cross-linkable matrix precursor of the dopant ink composition, and driving dopants from the cured dopant ink composition toward the substrate.
    Type: Application
    Filed: September 30, 2011
    Publication date: April 4, 2013
    Inventors: Paul Loscutoff, Kahn Wu, Steven Molesa
  • Publication number: 20130081687
    Abstract: A method of manufacturing solar cells is disclosed. The method comprises depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material, and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate.
    Type: Application
    Filed: September 30, 2011
    Publication date: April 4, 2013
    Inventors: Kahn C. Wu, Steven M. Kraft, Paul Loscutoff, Steven Edward Molesa