Patents by Inventor Paul McHugh
Paul McHugh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220270923Abstract: Exemplary methods of producing a semiconductor substrate may include plating a metal within a plurality of vias on the semiconductor substrate. A target average fill thickness of the metal within the plurality of vias may be between about a thickness equal to an average via radius of the plurality of vias and a thickness twice the average via radius of the plurality of vias. At least one via of the plurality of vias may be filled to a height below the target average fill thickness of the metal. The methods may include heating the metal to cause reflow of the metal within each via of the plurality of vias. The reflow may adjust the metal within the at least one via to increase in height towards the target average fill thickness.Type: ApplicationFiled: May 12, 2022Publication date: August 25, 2022Applicant: Applied Materials, Inc.Inventors: Paul McHugh, Kwan Wook Roh, Gregory J. Wilson
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Patent number: 11367653Abstract: Exemplary methods of producing a semiconductor substrate may include characterizing a substrate pattern to identify a zonal distribution of a plurality of vias and a height and a radius of each via of the plurality of vias. The methods may include determining a fill rate for each via within the zonal distribution of the plurality of vias. The methods may include modifying a die pattern to adjust via fill rates between two zones of vias. The methods may also include producing a substrate according to the die pattern.Type: GrantFiled: September 17, 2019Date of Patent: June 21, 2022Assignee: Applied Materials, Inc.Inventors: Paul McHugh, Kwan Wook Roh, Gregory J. Wilson
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Patent number: 10971354Abstract: Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.Type: GrantFiled: July 14, 2017Date of Patent: April 6, 2021Assignee: Applied Materials, Inc.Inventors: Eric J. Bergman, John L. Klocke, Paul McHugh, Stuart Crane, Richard W. Plavidal
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Patent number: 10840104Abstract: Methods of etching a semiconductor substrate may include applying an etchant to the semiconductor substrate. The semiconductor substrate may include an exposed region of an oxygen-containing material and an exposed region of a nitrogen-containing material. The methods may include heating the semiconductor substrate from a first temperature to a second temperature. The methods may include maintaining the semiconductor substrate at the second temperature for a period of time sufficient to perform an etch of the nitrogen-containing material relative to the oxygen-containing material. The methods may also include quenching the etch subsequent the period of time.Type: GrantFiled: July 16, 2018Date of Patent: November 17, 2020Assignee: Applied Materials, Inc.Inventors: Eric J. Bergman, John L. Klocke, Charles Sharbono, Kyle Moran Hanson, Paul McHugh
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Patent number: 10655226Abstract: Apparatus and methods to deposit a film using a batch processing chamber with a plurality of heating zones are described. The film is deposited on one or more substrates and the uniformity of the deposition thickness is determined at a plurality of points. The heating zones set points are applied to a sensitivity matrix and new temperature or power set points for the heating zones are determined and set. One or more substrates are processed using the new set points and the thickness uniformity is determined and may be adjusted again to increase the uniformity.Type: GrantFiled: May 22, 2018Date of Patent: May 19, 2020Assignee: Applied Materials, Inc.Inventors: Gregory J. Wilson, Paul McHugh, Karthik Ramanathan
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Publication number: 20200098628Abstract: Exemplary methods of producing a semiconductor substrate may include characterizing a substrate pattern to identify a zonal distribution of a plurality of vias and a height and a radius of each via of the plurality of vias. The methods may include determining a fill rate for each via within the zonal distribution of the plurality of vias. The methods may include modifying a die pattern to adjust via fill rates between two zones of vias. The methods may also include producing a substrate according to the die pattern.Type: ApplicationFiled: September 17, 2019Publication date: March 26, 2020Applicant: Applied Materials, Inc.Inventors: Paul McHugh, Kwan Wook Roh, Gregory J. Wilson
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Patent number: 10546762Abstract: Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.Type: GrantFiled: November 15, 2017Date of Patent: January 28, 2020Assignee: Applied Materials, Inc.Inventors: Eric J. Bergman, John L. Klocke, Paul McHugh, Stuart Crane, Richard W. Plavidal
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Patent number: 10494731Abstract: Embodiments of the present technology may include an electroplating system. The electroplating system may include a vessel. The system may also include a wafer holder configured for holding a wafer in the vessel. The system may further include an anode in the vessel. In addition, the method may include a plurality of thief electrodes. For each thief electrode of the plurality of thief electrodes, a thief current channel may be defined by a channel wall. The channel wall for each thief electrode may define an aperture adjacent to the wafer holder. The thief current channel may extend from each thief electrode to the aperture. The system may include a current control system in electrical communication with the plurality of thief electrodes. The current control system may be configured such that an amount of current delivered to each thief electrode can be adjusted independently.Type: GrantFiled: December 11, 2017Date of Patent: December 3, 2019Assignee: Applied Materials, Inc.Inventors: Paul McHugh, Gregory J. Wilson, Daniel Woodruff, Marvin Bernt
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Publication number: 20190345624Abstract: Electroplating systems according to the present technology may include a two-bath electroplating chamber including a separator configured to provide fluid separation between a first bath configured to maintain a catholyte during operation and a second bath configured to maintain an anolyte during operation. The system may include a catholyte tank fluidly coupled with the first bath of the two-bath electroplating chamber. The system may also include a contaminant retrieval system configured to remove contaminant ions from the catholyte.Type: ApplicationFiled: May 9, 2019Publication date: November 14, 2019Applicant: Applied Materials, Inc.Inventors: Kwan Wook Roh, Paul McHugh, Sam Lee, Kyle M. Hanson, Marvin L. Bernt, Bioh Kim
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Patent number: 10373864Abstract: Methods of wetting a semiconductor substrate may include forming a controlled atmosphere in a processing chamber housing the semiconductor substrate. The semiconductor substrate may define a plurality of features, which may include vias. The methods may include flowing a wetting agent into the processing chamber. A chamber pressure may be maintained below about 100 kPa. The methods may also include wetting the plurality of features defined in the substrate.Type: GrantFiled: December 22, 2017Date of Patent: August 6, 2019Assignee: Applied Materials, Inc.Inventors: Paul McHugh, Bridger Hoerner, Marvin Bernt, Thomas H. Oberlitner, Brian Aegerter, Richard W. Plavidal, Andrew Anten, Adam McClure, Randy Harris
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Publication number: 20190177869Abstract: Embodiments of the present technology may include an electroplating system. The electroplating system may include a vessel. The system may also include a wafer holder configured for holding a wafer in the vessel. The system may further include an anode in the vessel. In addition, the method may include a plurality of thief electrodes. For each thief electrode of the plurality of thief electrodes, a thief current channel may be defined by a channel wall. The channel wall for each thief electrode may define an aperture adjacent to the wafer holder. The thief current channel may extend from each thief electrode to the aperture. The system may include a current control system in electrical communication with the plurality of thief electrodes. The current control system may be configured such that an amount of current delivered to each thief electrode can be adjusted independently.Type: ApplicationFiled: December 11, 2017Publication date: June 13, 2019Applicant: Applied Materials, Inc.Inventors: Paul McHugh, Gregory J. Wilson, Daniel Woodruff, Marvin Bernt
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Publication number: 20190019688Abstract: Methods of etching a semiconductor substrate may include applying an etchant to the semiconductor substrate. The semiconductor substrate may include an exposed region of an oxygen-containing material and an exposed region of a nitrogen-containing material. The methods may include heating the semiconductor substrate from a first temperature to a second temperature. The methods may include maintaining the semiconductor substrate at the second temperature for a period of time sufficient to perform an etch of the nitrogen-containing material relative to the oxygen-containing material. The methods may also include quenching the etch subsequent the period of time.Type: ApplicationFiled: July 16, 2018Publication date: January 17, 2019Applicant: Applied Materials, Inc.Inventors: Eric J. Bergman, John L. Klocke, Charles Sharbono, Kyle Moran Hanson, Paul McHugh
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Publication number: 20180340259Abstract: Apparatus and methods to deposit a film using a batch processing chamber with a plurality of heating zones are described. The film is deposited on one or more substrates and the uniformity of the deposition thickness is determined at a plurality of points. The heating zones set points are applied to a sensitivity matrix and new temperature or power set points for the heating zones are determined and set. One or more substrates are processed using the new set points and the thickness uniformity is determined and may be adjusted again to increase the uniformity.Type: ApplicationFiled: May 22, 2018Publication date: November 29, 2018Inventors: Gregory J. Wilson, Paul McHugh, Karthik Ramanathan
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Publication number: 20180182664Abstract: Methods of wetting a semiconductor substrate may include forming a controlled atmosphere in a processing chamber housing the semiconductor substrate. The semiconductor substrate may define a plurality of features, which may include vias. The methods may include flowing a wetting agent into the processing chamber. A chamber pressure may be maintained below about 100 kPa. The methods may also include wetting the plurality of features defined in the substrate.Type: ApplicationFiled: December 22, 2017Publication date: June 28, 2018Applicant: Applied Materials, Inc.Inventors: Paul McHugh, Bridger Hoerner, Marvin Bernt, Thomas H. Oberlitner, Brian Aegerter, Richard W. Plavidal, Andrew Anten, Adam McClure, Randy Harris
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Publication number: 20180144954Abstract: Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.Type: ApplicationFiled: November 15, 2017Publication date: May 24, 2018Applicant: Applied Materials, Inc.Inventors: Eric J. Bergman, John L. Klocke, Paul McHugh, Stuart Crane, Richard W. Plavidal
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Publication number: 20180019119Abstract: Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.Type: ApplicationFiled: July 14, 2017Publication date: January 18, 2018Applicant: Applied Materials Inc,Inventors: Eric J. Bergman, John L. Klocke, Paul McHugh, Stuart Crane, Richard W. Plavidal
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Patent number: 9859135Abstract: An example waterfall apparatus includes (1) a first portion of a first width having (a) a first plenum, a second plenum, and a restricted fluid path therebetween; (b) a first coupling surface; and (c) an inlet opening that creates a fluid path between the first coupling surface and the first plenum; and (2) a second portion of a second width larger than the first width and having (a) a second coupling surface; and (b) an inlet aligned with the first portion inlet opening. The first and second coupling surfaces form a slot that extends along at least a portion of a length of the waterfall apparatus and that connects to the second plenum. Fluid introduced into the second portion inlet fills the first plenum, travels through the restricted fluid path to the second plenum, and exits the slot between the first and second portions to form a rinsing fluid waterfall.Type: GrantFiled: February 19, 2015Date of Patent: January 2, 2018Assignee: Applied Materials, Inc.Inventors: Jonathan S. Frankel, Brian J. Brown, Vincent S. Francischetti, Paul McHugh, Kyle M. Hanson, Ekaterina Mikhaylichenko
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Publication number: 20160175857Abstract: An example waterfall apparatus includes (1) a first portion of a first width having (a) a first plenum, a second plenum, and a restricted fluid path therebetween; (b) a first coupling surface; and (c) an inlet opening that creates a fluid path between the first coupling surface and the first plenum; and (2) a second portion of a second width larger than the first width and having (a) a second coupling surface; and (b) an inlet aligned with the first portion inlet opening. The first and second coupling surfaces form a slot that extends along at least a portion of a length of the waterfall apparatus and that connects to the second plenum. Fluid introduced into the second portion inlet fills the first plenum, travels through the restricted fluid path to the second plenum, and exits the slot between the first and second portions to form a rinsing fluid waterfall.Type: ApplicationFiled: February 19, 2015Publication date: June 23, 2016Inventors: Jonathan S. Frankel, Brian J. Brown, Vincent S. Francischetti, Paul McHugh, Kyle M. Hanson, Ekaterina Mikhaylichenko
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Publication number: 20120036131Abstract: A method for obtaining and analyzing information objects including generating, collecting or discovering information objects. The information objects are signified at least in part using deliberately ambiguated signifier prompts, for example, linear scale opposing negatives or positives, and/or multi-dimensional signifier prompts. The information objects may comprise text or non-text fragments, and may be generated or selected. The responses to the signifier prompts are stored with the fragments to provide a dataset of signified fragments. The signified fragments may be analyzed based on the signifiers and can be utilized as part of an explorable knowledge repository, or objective measures can be created to aid in mass opinion capture or human attitude auditing. The fragments may be represented on a graphical template.Type: ApplicationFiled: September 30, 2011Publication date: February 9, 2012Applicant: COGNITIVE EDGE PTE LTDInventors: Steven Anthony Bealing, David John Snowden, Michael Alexander Cheveldave, Peter Richard Stanbridge, Kenneth John-Paul McHugh
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Patent number: 8031201Abstract: A method for obtaining and analyzing information objects including generating, collecting or discovering information objects. The information objects are signified at least in part using deliberately ambiguated signifier prompts, for example, linear scale opposing negatives or positives, and/or multi-dimensional signifier prompts. The information objects may comprise text or non-text fragments, and may be generated or selected. The responses to the signifier prompts are stored with the fragments to provide a dataset of signified fragments. The signified fragments may be analyzed based on the signifiers and can be utilized as part of an explorable knowledge repository, or objective measures can be created to aid in mass opinion capture or human attitude auditing. The fragments may be represented on a graphical template.Type: GrantFiled: February 13, 2009Date of Patent: October 4, 2011Assignee: Cognitive Edge Pte LtdInventors: David John Snowden, Steven Anthony Bealing, Michael Alexander Cheveldave, Peter Richard Stanbridge, Kenneth John-Paul McHugh