Abstract: Resist compositions containing silicon, boron, or both silicon and boron may be used with ultra-violet lithography processes and extreme ultra-violet (EUV) lithography processes to increase the reactive ion etch resistance of the resist compositions, improve transmission of the resist materials, and to dope substrates.

Abstract: The present invention provides patterned features of dimensions of less than 50 nm on a substrate. According to various embodiments, the features may be “Manhattan” style structures, have high aspect ratios, and/or have atomically smooth surfaces. The patterned features are made from polymer brushes grafted to a substrate. In some embodiments, the dimensions of the features may be determined by adjusting the grafting density and/or the molecular weight of the brushes. Once the brushes are patterned, the features can be shaped and reshaped with thermal or solvent treatments to achieve the desired profiles. The chemical nature of the polymer brush is thus independent of the patterning process, which allows for optimization of the polymer brush used for specific applications. Applications include masks for pattern transfer techniques such as reactive ion etching.

Abstract: The present invention provides improved and compositions methods for replicating substrate patterns including patterns containing irregular features. The methods of the invention involve depositing block copolymer materials on a patterned substrate and ordering components in the material to replicate the pattern. In some embodiments, ordering is facilitated through the use of blends of the copolymer material and/or configuring substrate patterns so that regions of the substrate pattern interact in a highly preferential manner with at least one of the components in the copolymer material. The invention also provides compositions containing a substrate pattern with irregular features replicated in a block copolymer material.

Abstract: Resist compositions containing silicon, boron, or both silicon and boron may be used with ultra-violet lithography processes and extreme ultra-violet (EUV) lithography processes to increase the reactive ion etch resistance of the resist compositions, improve transmission of the resist materials, and to dope substrates.