Abstract: An improved condition testing system and method includes a structure including a semiconductor material with a target portion and a second portion. The target portion has a first feature when at least one of the following occurs: an external force is received by the second portion of the structure and an internal condition occurs in the target portion. The system and method further has a interferogram shaped and located to produce a first optical interference pattern when the target portion and the interferogram are exposed to non-invasive illumination and when the target portion has the first feature. Further implementations use a second test interferogram spaced apart from the first test interferogram.

Abstract: An improved condition testing system and method includes a structure including a semiconductor material with a target portion and a second portion. The target portion has a first feature when at least one of the following occurs: an external force is received by the second portion of the structure and an internal condition occurs in the target portion. The system and method further has a grating shaped and located to produce a first optical interference pattern when the target portion and the grating are exposed to non-invasive illumination and when the target portion has the first feature. Further implementations use a second grating spaced apart from the first grating.

Abstract: A method for optically testing semiconductor devices or wafers using a holographic optical interference system with light source providing a light beam of coherent wavelength with a wavelength to which the semiconductor material is transparent, splitting the light beam into a reference beam and an object beam, imposing the object beam on the semiconductor material to generate a reflected object beam reflected from interior structures of the semiconductor material, adjusting the angle of the reference beam relative to the object beam between a plurality of angles with the semiconductor material being a different state for each angle of the reference beam, imposing the reflected object beam and the reference beam onto a detection device to create a plurality of interference patterns, one for each of the reference beam angles, and comparing the interference patterns to one another to determine and display characteristics within the semiconductor material.

Abstract: A method for optically testing semiconductor devices or wafers using a holographic optical interference system with a light source providing a light beam of coherent wavelength with a wavelength to which the semiconductor material is transparent, splitting the light beam into a reference beam and an object beam, imposing the object beam on the semiconductor material to generate a reflected object beam reflected from interior structures of the semiconductor material, adjusting the angle of the reference beam relative to the object beam between a plurality of angles with the semiconductor material being in a different state for each angle of the reference beam, imposing the reflected object beam and the reference beam onto a detection device to create a plurality of interference patterns, one for each of the reference beam angles, and comparing the interference patterns to one another to determine characteristics within the semiconductor material.

Abstract: An improved voltage test system.

Abstract: A noninvasive testing system using a method of testing a device under test by providing a beam of light from a light source having a first wavelength, and in a first beam instance imposing the beam of light on a test device when the test device has a first state of refractive indexes, and in a second beam instance imposing the beam of light on the test device when the test device has a second state of refractive indexes, in both instances the beam of light being imposed on the test device over a spatial region within the test device substantially greater than the first wavelength. Data resulting from the interference of the first beam instance and the second beam instance within the device under test is obtained representative of the voltages within the region. The first state of refractive indexes is at a first voltage potential, and the second state of refractive indexes is at a second voltage potential different from the first voltage potential.

Abstract: An improved condition testing system and method includes a structure including a semiconductor material with a target portion and a second portion. The target portion has a first feature when at least one of the following occurs: an external force is received by the second portion of the structure and an internal condition occurs in the target portion. The system and method further has a grating shaped and located to produce a first optical interference pattern when the target portion and the grating are exposed to non-invasive illumination and when the target portion has the first feature. Further implementations use a second grating spaced apart from the first grating.

Abstract: An improved condition testing system and method includes a structure including a semiconductor material with a target portion and a second portion. The target portion has a first feature when at least one of the following occurs: an external force is received by the second portion of the structure and an internal condition occurs in the target portion. The system and method further has a grating shaped and located to produce a first optical interference pattern when the target portion and the grating are exposed to non-invasive illumination and when the target portion has the first feature. Further implementations use a second grating spaced apart from the first grating.

Abstract: A non-invasive testing system.

Abstract: An improved voltage test system.

Abstract: A non-invasive testing system.

Abstract: An improved voltage test system.

Abstract: A method of testing a device under test comprising providing a beam of light from a light source having a first wavelength. Imposing the beam of light on a test device over a spatial region within the test device substantially greater than the first wavelength, wherein the test device has a first state of refraction. Imposing the beam of light on the test device over a spatial region within the test device substantially greater than the first wavelength, wherein the test device has a second state of refraction. Obtaining data resulting from the interference of the first beam and the second beam within the device under test representative of the voltages within the region, wherein the first state of refraction is at a first voltage potential, and wherein the second state of refraction is at a second voltage potential different from the first voltage potential.

Abstract: An improved voltage test system.

Abstract: An improved voltage test system.

Abstract: An improved voltage test system.

Abstract: A method of testing a device under test includes providing a beam of coherent light from a light source having a first wavelength, and imposing the beam of light on a test device over a spatial region within the test device substantially greater than the first wavelength, wherein the test device has a first state of birefringence. A second beam of light is imposed on the test device over a spatial region within the test device substantially greater than the first wavelength, wherein the test device has a second state of birefringence.