Patents by Inventor Paul PIVA

Paul PIVA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210184115
    Abstract: A multiple-atom germanium quantum dot is provided that includes multiple dangling bonds on an otherwise H-terminated germanium surface, each dangling bonds having one of three ionization states of +1, 0 or ?1 and corresponding respectively to 0, 1, or 2 electrons in a dangling bond state. The dangling bonds together in close proximity and having the dangling bond states energetically in the germanium band gap with selective control of the ionization state of one of the dangling bonds. A new class of electronics elements is provided through the inclusion of at least one input and at least one output to the multiple dangling bonds. Selective modification or creation of a dangling bond is also detailed.
    Type: Application
    Filed: February 4, 2021
    Publication date: June 17, 2021
    Applicant: Quantum Silicon Inc.
    Inventors: Robert A. Wolkow, Roshan Achal, Taleana Huff, Hatem Labidi, Lucian Livadaru, Paul Piva, Mohammad Rashidi
  • Patent number: 10937959
    Abstract: A multiple-atom silicon quantum dot is provided that includes multiple dangling bonds on an otherwise H-terminated silicon surface, each dangling bonds having one of three ionization states of +1, 0 or ?1 and corresponding respectively to 0, 1, or 2 electrons in a dangling bond state. The dangling bonds together in close proximity and having the dangling bond states energetically in the silicon band gap with selective control of the ionization state of one of the dangling bonds. A new class of electronics elements is provided through the inclusion of at least one input and at least one output to the multiple dangling bonds. Selective modification or creation of a dangling bond is also detailed.
    Type: Grant
    Filed: July 19, 2017
    Date of Patent: March 2, 2021
    Assignee: QUANTUM SILICON INC.
    Inventors: Robert A. Wolkow, Roshan Achal, Taleana Huff, Hatem Labidi, Lucian Livadaru, Paul Piva, Mohammad Rashidi
  • Publication number: 20200044150
    Abstract: A multiple-atom silicon quantum dot is provided that includes multiple dangling bonds on an otherwise H-terminated in silicon surface, each dangling bonds having one of three ionization states of +1, 0 or ?1 and corresponding respectively to 0, 1, or 2 electrons in a dangling bond state. The dangling bonds together in close proximity and having the dangling bond states energetically in the silicon band gap with selective control of the ionization state of one of the dangling bonds. A new class of electronics elements is provided through the inclusion of at least one input and at least one output to the multiple dangling bonds. Selective modification or creation of a dangling bond is also detailed.
    Type: Application
    Filed: July 19, 2017
    Publication date: February 6, 2020
    Inventors: Robert A. C, Roshan ACHAI, Taleana HUFF, Hatem LABIDI, Lucian LIVADARU, Paul PIVA, Mohammad RASHIDI