Abstract: A system may include a first semiconductor processing station configured to deposit a material on a first semiconductor wafer and a chemical tank that provides liquid to the processing station during a deposition process. The chemical tank may provide measurements of characteristics of the liquid to a controller. The controller may be configured to receive the measurements from the chemical tank; provide an input based on the measurements to a trained model that is configured to generate an output that adjusts an operating parameter of the first station such that the thickness uniformity of the material is closer to a target thickness uniformity; and cause the first station to deposit the material on a second wafer using the operating parameter as adjusted by the output.

Abstract: Embodiments of the present technology include electroplating methods that include providing a first portion of an electrolyte feedstock to a first compartment of an electrochemical cell. The first portion of an electrolyte feedstock may be characterized by an initial metal ion concentration and an initial acid concentration. The methods may include providing a second portion of an electrolyte feedstock to a second compartment of the electrochemical cell. The second compartment and first compartment may be separated by a first membrane. The methods may include providing an acidic solution to a third compartment of the electrochemical cell. The third compartment and second compartment may be separated by a second membrane. The acidic solution may be characterized by an initial acid concentration. The methods may include applying a current to an anode of the electrochemical cell. The anode of the electrochemical cell may be disposed proximate the first compartment and across from the first membrane.

Abstract: Electroplating methods may include providing an electrolyte feedstock comprising copper to a first compartment of an electrochemical cell. The methods may include providing an acidic solution to a second compartment of the electrochemical cell. The first compartment and second compartment may be separated by a membrane. The methods may include applying a current to an anode of the electrochemical cell. The anode of the electrochemical cell may be disposed proximate the first compartment and across from the membrane. The methods may include forming an anolyte and catholyte precursor.

Abstract: A method of plating substrates may include placing a substrate in a plating chamber comprising a liquid, and applying a current to the liquid in the plating chamber to deposit a metal on exposed portions of the substrate, where the current may include alternating cycles of a forward plating current and a reverse deplating current. To determine the current characteristics, a model of a substrate may be simulated during the plating process to generate data points that relate characteristics of the plating process and a pattern on the substrate to a range nonuniformity of material formed on the substrate during the plating process. Using information from the data points, values for the forward and reverse currents may be derived and provided to the plating chamber to execute the plating process.

Abstract: A system may include a first semiconductor processing station configured to deposit a material on a first semiconductor wafer, a second semiconductor processing station configured perform measurements indicative of a thickness of the material after the material has been deposited on the first semiconductor wafer, and a controller. The controller may be configured to receive the measurements from the second station; provide an input based on the measurements to a trained model that is configured to generate an output that adjusts an operating parameter of the first station such that the thickness of the material is closer to a target thickness; and causing the first station to deposit the material on a second wafer using the operating parameter as adjusted by the output.

Abstract: Electroplating systems may include an electroplating chamber. The systems may also include a replenish assembly fluidly coupled with the electroplating chamber. The replenish assembly may include a first compartment housing anode material. The first compartment may include a first compartment section in which the anode material is housed and a second compartment section separated from the first compartment section by a divider. The replenish assembly may include a second compartment fluidly coupled with the electroplating chamber and electrically coupled with the first compartment. The replenish assembly may also include a third compartment electrically coupled with the second compartment, the third compartment including an inert cathode.

Abstract: Systems and methods for electroplating are described. The electroplating system may include a vessel configured to hold a first portion of a liquid electrolyte. The system may also include a substrate holder configured for holding a substrate in the vessel. The system may further include a first reservoir in fluid communication with the vessel. In addition, the system may include a second reservoir in fluid communication with the vessel. Furthermore, the system may include a first mechanism configured to expel a second portion of the liquid electrolyte from the first reservoir into the vessel. The system may also include a second mechanism configured to take in a third potion of the liquid electrolyte from the vessel into the second reservoir when the second portion of the liquid electrolyte is expelled from the first reservoir. Methods may include oscillating flow of the electrolyte within the vessel.

Abstract: An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.

Abstract: Exemplary electroplating systems may include a vessel. The systems may include a paddle disposed within the vessel. The paddle may be characterized by a first surface and a second surface. The first surface of the paddle may be include a plurality of ribs that extend upward from the first surface. The plurality of ribs may be arranged in a generally parallel manner about the first surface. The paddle may define a plurality of apertures through a thickness of the paddle. Each of the plurality of apertures may have a diameter of less than about 5 mm. The paddle may have an open area of less than about 15%.

Abstract: Systems and methods for electroplating are described. The electroplating system may include a vessel configured to hold a first portion of a liquid electrolyte. The system may also include a substrate holder configured for holding a substrate in the vessel. The system may further include a first reservoir in fluid communication with the vessel. In addition, the system may include a second reservoir in fluid communication with the vessel. Furthermore, the system may include a first mechanism configured to expel a second portion of the liquid electrolyte from the first reservoir into the vessel. The system may also include a second mechanism configured to take in a third potion of the liquid electrolyte from the vessel into the second reservoir when the second portion of the liquid electrolyte is expelled from the first reservoir. Methods may include oscillating flow of the electrolyte within the vessel.

Abstract: An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.

Abstract: An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.

Abstract: Systems and methods for electroplating are described. The electroplating system may include a vessel configured to hold a first portion of a liquid electrolyte. The system may also include a substrate holder configured for holding a substrate in the vessel. The system may further include a first reservoir in fluid communication with the vessel. In addition, the system may include a second reservoir in fluid communication with the vessel. Furthermore, the system may include a first mechanism configured to expel a second portion of the liquid electrolyte from the first reservoir into the vessel. The system may also include a second mechanism configured to take in a third potion of the liquid electrolyte from the vessel into the second reservoir when the second portion of the liquid electrolyte is expelled from the first reservoir. Methods may include oscillating flow of the electrolyte within the vessel.

Abstract: Electroplating systems may include an electroplating chamber. The systems may also include a replenish assembly fluidly coupled with the electroplating chamber. The replenish assembly may include a first compartment housing anode material. The first compartment may include a first compartment section in which the anode material is housed and a second compartment section separated from the first compartment section by a divider. The replenish assembly may include a second compartment fluidly coupled with the electroplating chamber and electrically coupled with the first compartment. The replenish assembly may also include a third compartment electrically coupled with the second compartment, the third compartment including an inert cathode.

Abstract: An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.

Abstract: Systems and methods for electroplating are described. The electroplating system may include a vessel configured to hold a first portion of a liquid electrolyte. The system may also include a substrate holder configured for holding a substrate in the vessel. The system may further include a first reservoir in fluid communication with the vessel. In addition, the system may include a second reservoir in fluid communication with the vessel. Furthermore, the system may include a first mechanism configured to expel a second portion of the liquid electrolyte from the first reservoir into the vessel. The system may also include a second mechanism configured to take in a third potion of the liquid electrolyte from the vessel into the second reservoir when the second portion of the liquid electrolyte is expelled from the first reservoir. Methods may include oscillating flow of the electrolyte within the vessel.

Abstract: An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.

Abstract: Systems and methods for electroplating are described. The electroplating system may include a vessel configured to hold a first portion of a liquid electrolyte. The system may also include a substrate holder configured for holding a substrate in the vessel. The system may further include a first reservoir in fluid communication with the vessel. In addition, the system may include a second reservoir in fluid communication with the vessel. Furthermore, the system may include a first mechanism configured to expel a second portion of the liquid electrolyte from the first reservoir into the vessel. The system may also include a second mechanism configured to take in a third potion of the liquid electrolyte from the vessel into the second reservoir when the second portion of the liquid electrolyte is expelled from the first reservoir. Methods may include oscillating flow of the electrolyte within the vessel.

Abstract: Electroplating apparatus agitates electrolyte to provide high velocity fluid flows at the surface of a wafer. The apparatus includes a paddle which provides uniform high mass transfer over the entire wafer, even with a relatively large gap between the paddle and the wafer. Consequently, the processor may have an electric field shield positioned between the paddle and the wafer for effective shielding at the edges of the wafer. The influence of the paddle on the electric field across the wafer is reduced as the paddle is spaced relatively farther from the wafer.

Abstract: An electroplating apparatus has a vessel for holding electrolyte. A head has a rotor including a contact ring for holding a wafer having a notch. The contact ring includes a perimeter voltage ring having perimeter contact fingers for contacting the wafer around the perimeter of the wafer, except at the notch. The contact ring also has a notch contact segment having one or more notch contact fingers for contacting the wafer at the notch. The perimeter voltage ring is insulated from the notch contact segment. A negative voltage source is connected to the perimeter voltage ring, and a positive voltage source connected to the notch contact segment. The positive voltage applied at the notch reduces the current crowding effect at the notch. The wafer is plated with a film having more uniform thickness.