Patents by Inventor Paul R. Nisson

Paul R. Nisson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Incorporation of an impurity into a thin film
    Patent number: 6774019
    Abstract: The present invention describes a method of forming a thin film on a substrate arranged in a deposition system comprising the step of introducing a pre-determined amount of an impurity in a confined volume in the deposition system. One or more gases are introduced into the deposition system for forming the thin film. The impurity is removed from the confined volume in a gas phase during formation of the thin film. The impurity in the gas phase is incorporated into the thin film.
    Type: Grant
    Filed: May 17, 2002
    Date of Patent: August 10, 2004
    Assignee: International Business Machines Corporation
    Inventors: Charles Augustus Choate, IV, Timothy S. Hayes, Michael Raymond Lunn, Paul R. Nisson, Dean W. Siegel, Michael C. Triplett
  • Incorporation of an impurity into a thin film
    Publication number: 20040144313
    Abstract: The present invention describes a method of forming a thin film on a substrate arranged in a deposition system comprising the step of introducing a pre-determined amount of an impurity in a confined volume in the deposition system. One or more gases are introduced into the deposition system for forming the thin film. The impurity is removed from the confined volume in a gas phase during formation of the thin film. The impurity in the gas phase is incorporated into the thin film.
    Type: Application
    Filed: December 12, 2003
    Publication date: July 29, 2004
    Applicant: International Business Machines Corporation
    Inventors: Charles Augustus Choate, Timothy S. Hayes, Michael Raymond Lunn, Paul R. Nisson, Dean W. Siegel, Michael C. Triplett
  • Incorporation of an impurity into a thin film
    Publication number: 20030213433
    Abstract: The present invention describes a method of forming a thin film on a substrate arranged in a deposition system comprising the step of introducing a pre-determined amount of an impurity in a confined volume in the deposition system. One or more gases are introduced into the deposition system for forming the thin film. The impurity is removed from the confined volume in a gas phase during formation of the thin film. The impurity in the gas phase is incorporated into the thin film.
    Type: Application
    Filed: May 17, 2002
    Publication date: November 20, 2003
    Applicant: International Business Machines Corporation
    Inventors: Charles Augustus Choate, Timothy S. Hayes, Michael Raymond Lunn, Paul R. Nisson, Dean W. Siegel, Michael C. Triplett