Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

Abstract: A rolling mill for producing rolling mill product is provided. The rolling mill includes a rolling mill line that moves the rolling mill product. A plurality of rolling mill stands are coupled to the rolling mill line that receives the rolling mill product and rolls the rolling mill product. A plurality of speed measuring devices that are positioned in close proximity to each rolling mill stand, where each speed measuring device measures the speed of the rolling mill product as it passes the speed measuring devices. A control device receives information associated with the speed measuring devices and adjusts the speed of the rolling mill product for any speed differential that might exist between any of the rolling mill stands.

Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.

Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

Abstract: A method induces plasma vapor deposition of metal into a recess in a workpiece. The method achieves re-sputtering of the metal at the base of the recess with a sputter gas by utilizing a mixture of Ar and He and/or Ne as the sputter gas with a ratio of He and/or Ne:Ar of at least about 10:1.

Abstract: A method induces plasma vapour deposition of metal into a recess in a workpiece. The method achieves re-sputtering of the metal at the base of the recess with a sputter gas by utilising a mixture of Ar and He and/or Ne as the sputter gas with a ratio of He and/or Ne:Ar of at least about 10:1.

Abstract: This invention relates to methods of depositing piezoelectric films such as in part of a stack including depositing a piezoelectric layer, measuring the thickness of the layer and depositing a further film or films such that the combined thickness is substantially equal to the target thickness.

Abstract: In one aspect, a method of processing the backsides of a batch of semiconductor wafers includes receiving a cassette for wafers in its inverted orientation in which the wafers are horizontally orientated with their front faces facing downwardly, removing the wafers sequentially, or as a batch, and processing the upwardly facing backsides of the wafers. In another aspect, an apparatus for processing wafers from a cassette holding wafers horizontally includes a cassette support where the cassette support is formed to receive an industry standard cassette in its inverted position but not in its upright position.

Abstract: Films are deposited on a substrate using a plasma chamber having a target disposed about an axis and a magnetron rotatable about the axis at an adjustable offset from the axis to vary the pattern of ions impinging on the target. In the deposition of the films, a first film of target material is deposited with the magnetron at a first inner-offset position relative to the axis, and in the same chamber, a second film is deposited using a reactive physical vapour deposition process with the magnetron at a second outer offset position. The deposition of the first and second film can occur in any order.

Abstract: This invention relates to methods and apparatus for controlling a rotating magnetic field during processing of a substrate. A sputter target 10 is arranged symmetrically about an axis 11, about which rotates an offset magnetron 12. Magnetron 12 is controlled, relative to the proposed process, such that only complete magnetron rotations are used in the deposition process.

Abstract: A method and apparatus for processing a thin film on a substrate. The method involves locating the substrate in a first rotational position a location opposed to a process station. The process station has a first axis and is arranged for processing the substrate about that axis. The substrate location is symmetrical about a second axis parallel to but offset from the first axis. The substrate is rotated about an axis generally orthogonal and passing through the wafer location to a second rotational position after an initial process and further processing takes place when the substrate is in the second rotational position.

Abstract: This invention relates to a method of depositing a layer on an exposed surface of an insulating layer of material. The method includes treating the exposed surface with hydrogen or a gaseous source of hydrogen in the presence of a plasma, prior to or during deposition of a metallic layer.

Abstract: This invention relates to a method of depositing a layer on an exposed surface of an insulating layer of material. The method includes treating the exposed surface with hydrogen or a gaseous source of hydrogen in the presence of a plasma, prior to or during deposition of a metallic layer.

Abstract: A method of sputtering a tungsten or tungsten-containing film from a tungsten target onto a semiconductor wafer includes using krypton or xenon as a sputter gas.

Abstract: This invention relates to methods of depositing piezoelectric films such as in part of a stack including depositing a piezoelectric layer, measuring the thickness of the layer and depositing a further film or films such that the combined thickness is substantially equal to the target thickness.

Abstract: A method of depositing crystallographically orientated aluminium nitride. Aluminium nitride is sputter deposited from a target on a workpiece maintained on a biased platen. The sputter gas is or includes krypton or xenon. The bias to the platen is selected to give a substantially flat XRD FWHM profile across the wafer and a stress in the film of less than or equal to ±5E10-8 dynes per cm2.

Abstract: A method of forming a conductive interconnect in a semiconductor structure. The method involves forming a via or trench through an interlayer dielectric to lie above prior metallisation. The base of the via or trench is sputter etch cleaned to expose a conductive surface of the prior metallisation. The via or trench is then filled with metal. Prior to the sputter etch step, the surface of the wall or walls of the via or trench are chemically modified to form a surface resistant to metal penetration.