Abstract: A method for determining mask patterns to be used on photo-masks in a multiple-exposure photolithographic process is described. During the method, an initial mask pattern, which is intended for use in a single-exposure photolithographic process, and a target pattern that is to be printed are used to determine a first mask pattern and a second mask pattern, which are intended for use in the multiple-exposure photolithographic process. In particular, the first mask pattern includes a first feature and the second mask pattern includes a second feature, and the first feature and the second feature overlap an intersection between features in the initial mask pattern. Moreover, the first mask pattern and the second mask pattern have at least one decreased spatial frequency relative to the initial mask pattern along at least one direction in the initial mask pattern.

Abstract: A method for determining a mask pattern to be used on a photo-mask in a photolithographic process is described. During the method, a target pattern that includes at least one continuous feature is provided. Then a mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask is determined. Note that the mask pattern includes at least two separate features corresponding to at least the one continuous feature. Furthermore, at least the two separate features are separated by a spacing having a length and the spacing overlaps at least a portion of at least the one continuous feature.

Abstract: A method for determining mask patterns to be used on photo-masks in a multiple-exposure photolithographic process is described. During the method, an initial mask pattern, which is intended for use in a single-exposure photolithographic process, and a target pattern that is to be printed are used to determine a first mask pattern and a second mask pattern, which are intended for use in the multiple-exposure photolithographic process. In particular, the first mask pattern includes a first feature and the second mask pattern includes a second feature, and the first feature and the second feature overlap an intersection between features in the initial mask pattern. Moreover, the first mask pattern and the second mask pattern have at least one decreased spatial frequency relative to the initial mask pattern along at least one direction in the initial mask pattern.

Abstract: A method for determining a mask pattern to be used on a photo-mask in a photolithographic process is described. During the method, a target pattern that includes at least one continuous feature is provided. Then a mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask is determined. Note that the mask pattern includes at least two separate features corresponding to at least the one continuous feature. Furthermore, at least the two separate features are separated by a spacing having a length and the spacing overlaps at least a portion of at least the one continuous feature.

Abstract: Embodiments of the invention include a method for forming alternating aperture phase-shift masks. An optically transparent substrate suitable for having a pattern of phase-shift regions formed thereon is provided. Alternatively, an opaque pattern is formed on the optically transparent substrate, the opaque pattern defining a pattern of phase-shift regions on the substrate. The phase shift regions are then ion implanted to damage the phase-shift regions. The damage penetrates to a predetermined depth and forms damaged regions that can be more easily etched than the adjacent undamaged portions of the substrate. The damaged portions define a final profile for phase shift recesses to be formed in the substrate. After implantation, substrate material is removed from the damaged phase-shift regions so that recesses are formed therein. The recesses are formed having a depth that corresponds to the depth of the damage caused in the phase-shift regions by the ion implantation.

Abstract: The mask includes a substrate formed of a material having a first index of refraction and a first level of transmittance to a wavelength of light with which the phase shift mask is designed for use. Second portions of the substrate are impregnated with a dopant species, leaving first portions of the substrate unaffected by the dopant species. The second portions of the substrate have a second index of refraction and a second level of transmittance to the wavelength of light. The first index of refraction is not equal to the second index of refraction. The second portions of the substrate shift a phase of the light relative to the first portions of the substrate and thereby increase an effective imaging resolution of the phase shift mask. In this manner, instead of using an etch process or a deposition process to form phase shifting regions of the mask, a doping processing is used instead. Most preferably, an ion implantation process is used.

Abstract: Embodiments of the invention include a capping layer of alloy material formed over a copper-containing layer, the alloy configured to prevent diffusion of copper through the capping layer. In another embodiment the alloy capping layer is self-aligned to the underlying conducting layer. Specific embodiments include capping layers formed of alloys of copper with materials including but not limited to calcium, strontium, barium, and other alkaline earth metals, as well as materials from other groups, for example, cadmium or selenium. The invention also includes methods for forming an alloy capping layer on a copper-containing conducting structure. One such method includes providing a substrate having formed thereon electrically conducting layer comprised of a copper-containing material and forming an alloy capping layer on the electrically conducting layer. In another method embodiment, forming the alloy capping layer includes forming a self-aligned capping layer over the conducting layer.

Abstract: Embodiments of the invention include a capping layer of alloy material formed over a copper-containing layer, the alloy configured to prevent diffusion of copper through the capping layer. In another embodiment the alloy capping layer is self-aligned to the underlying conducting layer. Specific embodiments include capping layers formed of alloys of copper with materials including but not limited to calcium, strontium, barium, and other alkaline earth metals, as well as materials from other groups, for example, cadmium or selenium. The invention also includes methods for forming an alloy capping layer on a copper-containing conducting structure. One such method includes providing a substrate having formed thereon electrically conducting layer comprised of a copper-containing material and forming an alloy capping layer on the electrically conducting layer. In another method embodiment, forming the alloy capping layer includes forming a self-aligned capping layer over the conducting layer.

Abstract: A system and method utilize a digital camera-ready printer which can print directly from a variety of conventional digital cameras on the market. The digital camera-ready printer includes a camera interface that can link with a digital camera in different modes to transfer frames of digital image data from the digital cameras to the digital camera-ready printer. Preferably, the camera interface includes a hot shoe receptor to establish a convenient hot shoe link between the digital camera and the digital camera-ready printer. The digital camera-ready printer includes a processor that can identify the coupled digital camera in order to instruct the digital camera to transmit the frames of digital image data. The processor can also convert the format of the digital image data to a predetermined image file format.

Abstract: A method and apparatus for forming a buried insulator layer, typically a silicon dioxide layer, includes using plasma source ion implantation to uniformly implant ions into exposed regions of a semiconductor wafer. A silicon-on-insulator (SOI) structure is formed by an anneal step before fabricating an integrated circuit into the thin semiconductor layer above the buried insulator layer.

Abstract: In electron beam lithography, a beam of incident electrons exposes a preselected circuit pattern in a thin resist layer deposited on top of a substrate to be etched. Some of the electrons scatter from the substrate back into the resist layer producing an undesired exposure which produces variable resolution of features. In accordance with the disclosed technique, the region of the resist which is complementary to the desired circuit pattern is also exposed by an electron beam which has been adjusted to produce an exposure approximating that due to backscattering. This additional exposure removes the spatial variability in resolution attainable by the electron beam lithography.