Patents by Inventor Paul Vanderheijden

Paul Vanderheijden has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Spin-transfer torque MRAM with a negative magnetic anisotropy assist layer and methods of operating the same
    Patent number: 11476409
    Abstract: A MRAM device includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a negative-magnetic-anisotropy assist layer having negative magnetic anisotropy that provides an in-plane magnetization within a plane that is perpendicular to the fixed magnetization direction, and a first nonmagnetic spacer layer located between the free layer and the negative-magnetic-anisotropy assist layer.
    Type: Grant
    Filed: May 21, 2020
    Date of Patent: October 18, 2022
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Quang Le, Zhanjie Li, Zhigang Bai, Paul VanderHeijden, Michael Ho
  • Spin transfer torque MRAM with a spin torque oscillator stack and methods of making the same
    Patent number: 11309487
    Abstract: A MRAM cell includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a spin torque oscillator stack, and a first nonmagnetic spacer layer located between the free layer and the spin torque oscillator stack.
    Type: Grant
    Filed: May 21, 2020
    Date of Patent: April 19, 2022
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Quang Le, Zhanjie Li, Zhigang Bai, Paul Vanderheijden, Michael Ho
  • Metallic magnetic memory devices for cryogenic operation and methods of operating the same
    Patent number: 10916284
    Abstract: A MRAM device includes a spin valve containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic metallic barrier layer located between the reference layer and the free layer, a metallic assist structure configured to provide rotating spin transfer torque to the free layer to assist the free layer switching during programming, and a first nonmagnetic metallic spacer layer located between the free layer and the metallic assist structure.
    Type: Grant
    Filed: June 16, 2020
    Date of Patent: February 9, 2021
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Quang Le, Zhanjie Li, Zhigang Bai, Paul Vanderheijden, Michael Ho
  • Spin-transfer torque MRAM with magnetically coupled assist layers and methods of operating the same
    Patent number: 10862022
    Abstract: A MRAM device includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a first magnetic assist layer, a second magnetic assist layer, an antiferromagnetic coupling spacer layer located between the first and second magnetic assist layers, and a first nonmagnetic spacer layer located between the free layer and the first magnetic assist layer. The antiferromagnetic coupling spacer layer is configured to provide antiferromagnetic coupling between a first magnetization direction of the first magnetic assist layer and a second magnetization direction of the second magnetic assist layer.
    Type: Grant
    Filed: December 6, 2018
    Date of Patent: December 8, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Quang Le, Zhanjie Li, Zhigang Bai, Paul Vanderheijden, Michael Ho
  • Spin transfer torque MRAM with a spin torque oscillator stack and methods of making the same
    Patent number: 10811596
    Abstract: A MRAM cell includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a spin torque oscillator stack, and a first nonmagnetic spacer layer located between the free layer and the a spin torque oscillator stack.
    Type: Grant
    Filed: December 6, 2018
    Date of Patent: October 20, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Quang Le, Zhanjie Li, Zhigang Bai, Paul Vanderheijden, Michael Ho
  • Spin-transfer torque MRAM with a negative magnetic anisotropy assist layer and methods of operating the same
    Patent number: 10797227
    Abstract: A MRAM device includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a negative-magnetic-anisotropy assist layer having negative magnetic anisotropy that provides an in-plane magnetization within a plane that is perpendicular to the fixed magnetization direction, and a first nonmagnetic spacer layer located between the free layer and the negative-magnetic-anisotropy assist layer.
    Type: Grant
    Filed: December 6, 2018
    Date of Patent: October 6, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Quang Le, Zhanjie Li, Zhigang Bai, Paul Vanderheijden, Michael Ho
  • METALLIC MAGNETIC MEMORY DEVICES FOR CRYOGENIC OPERATION AND METHODS OF OPERATING THE SAME
    Publication number: 20200312394
    Abstract: A MRAM device includes a spin valve containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic metallic barrier layer located between the reference layer and the free layer, a metallic assist structure configured to provide rotating spin transfer torque to the free layer to assist the free layer switching during programming, and a first nonmagnetic metallic spacer layer located between the free layer and the metallic assist structure.
    Type: Application
    Filed: June 16, 2020
    Publication date: October 1, 2020
    Inventors: Quang Le, Zhanjie Li, Zhigang Bai, Paul Vanderheijden, Michael Ho
  • SPIN TRANSFER TORQUE MRAM WITH A SPIN TORQUE OSCILLATOR STACK AND METHODS OF MAKING THE SAME
    Publication number: 20200287127
    Abstract: A MRAM cell includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a spin torque oscillator stack, and a first nonmagnetic spacer layer located between the free layer and the spin torque oscillator stack.
    Type: Application
    Filed: May 21, 2020
    Publication date: September 10, 2020
    Inventors: Quang LE, Zhanjie LI, Zhigang BAI, Paul VANDERHEIJDEN, Michael HO
  • SPIN-TRANSFER TORQUE MRAM WITH A NEGATIVE MAGNETIC ANISOTROPY ASSIST LAYER AND METHODS OF OPERATING THE SAME
    Publication number: 20200279991
    Abstract: A MRAM device includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a negative-magnetic-anisotropy assist layer having negative magnetic anisotropy that provides an in-plane magnetization within a plane that is perpendicular to the fixed magnetization direction, and a first nonmagnetic spacer layer located between the free layer and the negative-magnetic-anisotropy assist layer.
    Type: Application
    Filed: May 21, 2020
    Publication date: September 3, 2020
    Inventors: Quang LE, Zhanjie LI, Zhigang BAI, Paul VANDERHEIJDEN, Michael HO
  • Metallic magnetic memory devices for cryogenic operation and methods of operating the same
    Patent number: 10726892
    Abstract: A MRAM device includes a spin valve containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic metallic barrier layer located between the reference layer and the free layer, a metallic assist structure configured to provide rotating spin transfer torque to the free layer to assist the free layer switching during programming, and a first nonmagnetic metallic spacer layer located between the free layer and the metallic assist structure.
    Type: Grant
    Filed: December 6, 2018
    Date of Patent: July 28, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Quang Le, Zhanjie Li, Zhigang Bai, Paul Vanderheijden, Michael Ho
  • SPIN-TRANSFER TORQUE MRAM WITH MAGNETICALLY COUPLED ASSIST LAYERS AND METHODS OF OPERATING THE SAME
    Publication number: 20200185595
    Abstract: A MRAM device includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a first magnetic assist layer, a second magnetic assist layer, an antiferromagnetic coupling spacer layer located between the first and second magnetic assist layers, and a first nonmagnetic spacer layer located between the free layer and the first magnetic assist layer. The antiferromagnetic coupling spacer layer is configured to provide antiferromagnetic coupling between a first magnetization direction of the first magnetic assist layer and a second magnetization direction of the second magnetic assist layer.
    Type: Application
    Filed: December 6, 2018
    Publication date: June 11, 2020
    Inventors: Quang Le, Zhanjie Li, Zhigang Bai, Paul Vanderheijden, Michael Ho
  • SPIN-TRANSFER TORQUE MRAM WITH A NEGATIVE MAGNETIC ANISOTROPY ASSIST LAYER AND METHODS OF OPERATING THE SAME
    Publication number: 20200185594
    Abstract: A MRAM device includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a negative-magnetic-anisotropy assist layer having negative magnetic anisotropy that provides an in-plane magnetization within a plane that is perpendicular to the fixed magnetization direction, and a first nonmagnetic spacer layer located between the free layer and the negative-magnetic-anisotropy assist layer.
    Type: Application
    Filed: December 6, 2018
    Publication date: June 11, 2020
    Inventors: Quang Le, Zhanjie Li, Zhigang Bai, Paul Vanderheijden, Michael Ho
  • SPIN TRANSFER TORQUE MRAM WITH A SPIN TORQUE OSCILLATOR STACK AND METHODS OF MAKING THE SAME
    Publication number: 20200185596
    Abstract: A MRAM cell includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a spin torque oscillator stack, and a first nonmagnetic spacer layer located between the free layer and the a spin torque oscillator stack.
    Type: Application
    Filed: December 6, 2018
    Publication date: June 11, 2020
    Inventors: Quang Le, Zhanjie Li, Zhigang Bai, Paul Vanderheijden, Michael Ho
  • METALLIC MAGNETIC MEMORY DEVICES FOR CRYOGENIC OPERATION AND METHODS OF OPERATING THE SAME
    Publication number: 20200185015
    Abstract: A MRAM device includes a spin valve containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic metallic barrier layer located between the reference layer and the free layer, a metallic assist structure configured to provide rotating spin transfer torque to the free layer to assist the free layer switching during programming, and a first nonmagnetic metallic spacer layer located between the free layer and the metallic assist structure.
    Type: Application
    Filed: December 6, 2018
    Publication date: June 11, 2020
    Inventors: Quang Le, Zhanjie Li, Zhigang Bai, Paul Vanderheijden, Michael Ho