Abstract: Opto-electronic integrated waveguide devices are provided using a tilted valence band quantum well semiconductor double heterostructure with one growth of the same waveguide material, that operate simply by their normal operating forward bias for active waveguides with optical gain and operating in a reverse or no bias for active waveguide without optical gain or passive waveguides. The optical waveguides comprise a substrate, a bottom cladding layer, a core layer having a quantum well optical waveguiding double heterostructure and a top cladding layer. The quantum well optical waveguiding double heterostructure includes an InGaPAs first barrier layer atop the bottom cladding layer, a quantum well layer constructed of InxGa1.sub.-x-y Al.sub.y As is stacked on top of the first barrier layer which is graded from one side to the other forming a linearly increasing quantum well energy bandgap and an In.sub..52 AlGaAs second barrier layer is stacked on top of said quantum well core layer.

Abstract: The invention is directed to resonators and more particularly to an MMIC-compatible resonator which can be fabricated on an MMIC chip using MMIC processing techniques. The MMIC-compatible resonator has a substrate approximately 100 microns thick made of semi-insulating GaAs and/or AlGaAs. The substrate flanks an air via on which is fabricated a thin film piezoelectric semi-insulating GaAs film, comprising the piezoelectrically active element. The piezoelectrically active element is flanked either laterally or from the top to bottom thereof by a pair of electrodes which serve to excite the thickness shear or thickness extensional mode of the thin film piezoelectrically active element. There are a number of III-V and II-VI binary compounds and ternary, and other piezoelectric semiconductor alloys, which can be used for the purposes of the invention. The thin film measures approximately 5 microns or less in thickness and is fabricated on the semi-insulating GaAs, on the ?110!, ?111! or ?100! axis thereof.

Abstract: A quantum-well semiconductor laser/amplifier mounted on a highly conductive semiconductor substrate. Inactive regions include a highly doped N-region and a highly doped P-region. The N-region is composed of semiconductor material mounted on the substrate. The active region includes a quantum-well heterostructure of intrinsic semiconductor material that mounts on the N-region. The quantum-well structure includes a series of quantum wells, each having barrier layers, quantum-well layers, and a delta-strained layer mounted near the center of the quantum wells. The delta-strained layers are very thin, being formed from a number of mono-layers of semiconductor material. There is a large lattice mismatch between each of the delta-strained layers and its adjacent quantum-well layers. The band edges of the quantum-well layers and the delta-strained layers are located at substantially the same level. The P-region is composed of a semiconductor material that mounts on the quantum-well structure.

Abstract: A quantum well laser exhibiting near ideal switching characteristics, high power conversion efficiency and, moreover, capable of utilizing the advantageous characteristics of a double heterostructure optoelectronic switch comprises a quantum well region disposed between carrier confinement regions. In particular, the interface between the qunatum well regioin and a confinement region is adapted to the formation of an inversion layer.