Abstract: A communications network, coupled to a first and a second port, for communicating a media resource; and a first and second real-time communication client, coupled respectively to the first and second ports, each of the clients including: a communications subsystem for receiving the media resource; a renderizer subsystem, responsive to a control signal, for rendering the media resource; an interface for generating the control signal; and a synchronization subsystem for communicating the control signal; wherein a first one of the communications clients generates the control signal and communicates the control signal to the second one communications client to render the media resource in substantial synchronization on the communications clients.

Abstract: Apparatus and method for rapid interactive viewing of a digital image over a network. A client computer displays a view of an image. The image is originally resident on a server computer. The client computer maintains a cache, initially empty, of image blocks already obtained from the server. When the client computer is asked to render a view of a particular portion of the image at a particular resolution, it first ascertains if any image blocks in the image-block cache intersect the requested view. It then computes the residual area of the view resulting from subtracting out from the view the intersecting portions of cached image blocks, and, if the residual area is positive, downloads from the server computer a set of image blocks comprising the residual portion of the view at the given resolution.

Abstract: A system, method, computer program product, and propagated signal of this collaborative system are adapted to track metadata relating to an online digital asset that captures each user's or group's interest in the asset and thus, in the aggregate, defines a collective interest in the asset and self-selects a relevant market based upon the nature of the asset, the distribution, and the collective group. Further, the system, method, computer program product, and propagated signal implement a rights manager to provide for digital rights management in collaborative systems.

Abstract: A system, method, computer program product, and propagated signal for a real-time concurrent multi-user multi-way collaboration system that is able to incorporate one or more electronic devices including one or more portable devices that permits distributed users to easily and efficiently share both content and editorial input on such content (of course, text messaging is not limited to editorial input on the content), while enabling tracking/monitoring of the resource and its uses. Specifically, the system includes an electronic resource having an associated identifier; a plurality of communication clients, inter-communicated by a network, for initiating a transfer of said electronic resource from one of said plurality of communication clients to one or more other ones of said plurality of communication clients; and an asset tracker, coupled to said network, for communicating with a data file to link said associated identifier with each communication client receiving said electronic resource.

Abstract: A system, method, computer program product, and propagated signal for a real-time concurrent multi-user multi-way collaboration system that is able to incorporate one or more electronic devices including one or more portable devices that permits distributed users to easily and efficiently share both content and editorial input on such content (of course, text messaging is not limited to editorial input on the content). Specifically, a real-time concurrent multi-user multi-way collaboration system, method, and computer program capable of operation providing two or more users to be able to unambiguously collaborate in the rendering of a media resource, such that any user at any time may set a rendering of the media resource to a desired reference on all participating clients.

Abstract: A system, method, computer program product, and propagated signal for a real-time concurrent multi-user multi-way collaboration system that is able to incorporate one or more electronic devices including one or more portable devices that permits distributed users to easily and efficiently share both content and editorial input on such content.

Abstract: Apparatus and method for rapid interactive viewing of a digital image over a network. A client computer displays a view of an image. The image is originally resident on a server computer. The client computer maintains a cache, initially empty, of image blocks already obtained from the server. When the client computer is asked to render a view of a particular portion of the image at a particular resolution, it first ascertains if any image blocks in the image-block cache intersect the requested view. It then computes the residual area of the view resulting from subtracting out from the view the intersecting portions of cached image blocks, and, if the residual area is positive, downloads from the server computer a set of image blocks comprising the residual portion of the view at the given resolution.

Abstract: Apparatus and method for rapid interactive viewing of a digital image over a network. A client computer displays a view of an image. The image is originally resident on a server computer. The client computer maintains a cache, initially empty, of image blocks already obtained from the server. When the client computer is asked to render a view of a particular portion of the image at a particular resolution, it first ascertains if any image blocks in the image-block cache intersect the requested view. It then computes the residual area of the view resulting from subtracting out from the view the intersecting portions of cached image blocks, and, if the residual area is positive, downloads from the server computer a set of image blocks comprising the residual portion of the view at the given resolution.

Abstract: A memory device and method of manufacturing thereof, wherein a silicide material is selectively formed over active regions of a memory device. A silicide material may also be formed on the top surface of wordlines adjacent the active regions during the selective silicidation process. A single nitride insulating layer is used, and portions of the workpiece are covered with photoresist during the formation of the silicide material.

Abstract: A method of forming a buried strap for a memory device includes in-situ doping a semiconductor material during deposition with propane and a dopant to form a polycrystalline buried strap comprising carbon. A barrier layer comprising carbon, such as SiC or SixC1-x, or both, is formed within the buried strap that controls or slows down dopants from migrating to an adjacent outdiffusion region within the substrate. A heavily doped polysilicon region may be formed beneath the carbon-containing buried strap, which reduces the trench semiconductor material resistance.

Abstract: A memory device and method of manufacturing thereof, wherein a silicide material is selectively formed over active regions of a memory device. A silicide material may also be formed on the top surface of wordlines adjacent the active regions during the selective silicidation process. A single nitride insulating layer is used, and portions of the workpiece are covered with photoresist during the formation of the silicide material.

Abstract: Disclosed is an optical lithographic mask having one or more dummy patterns, each said dummy pattern having a masked area of said optical lithographic mask separated from one or more feature masked areas on said optical lithographic mask by an unmasked region of width d, wherein said width d is selected to substantially minimize an average deviation between the dimensions of said feature masked areas and corresponding features etched out upon a semiconductor surface utilizing said optical lithographic mask.

Abstract: A method of providing shallow trench (143) isolation for a semiconductor wafer (100). Trenches (113) are formed within a first semiconductor material (112) and a pad nitride (114), leaving a portion of first semiconductor material (112) and pad nitride (114) in a region between the trenches (113). A second semiconductor material (116) is deposited over the trenches (113) to fill the trenches (113) to a height below the first semiconductor material (112) top surface. A first insulator (130) is selectively formed over the second semiconductor material (116). The pad nitride (114) and a portion of the first semiconductor material (112) between the trenches (113) are removed to isolate element regions of the wafer (100) and form straps (142) having a low resistance.

Abstract: A method of providing shallow trench (143) isolation for a semiconductor wafer (100). Trenches (113) are formed within a first semiconductor material (112) and a pad nitride (114), leaving a portion of first semiconductor material (112) and pad nitride (114) in a region between the trenches (113). A second semiconductor material (116) is deposited over the trenches (113) to fill the trenches (113) to a height below the first semiconductor material (112) top surface. A first insulator (130) is selectively formed over the second semiconductor material (116). The pad nitride (114) and a portion of the first semiconductor material (112) between the trenches (113) are removed to isolate element regions of the wafer (100) and form straps (142) having a low resistance.

Abstract: A method (see e.g., FIG. 4) of fabricating a semiconductor device includes forming a trench 12 in a semiconductor body 10. A dielectric layer 26 is formed within the trench 12. Dielectric layer 26 lines the sidewall and, possibly, the bottom portions of the trench 12 in a manner where the thickness of the dielectric 26s at the sidewall is greater than the thickness of the dielectric 26b at the bottom. A dopant 28 can then be implanted into the semiconductor body beneath the trench.

Abstract: A semiconductor wafer structure in a overlay pattern that permits determination of overlay and critical dimension features by CD SEM in a single pass along a given axis, comprising: a) a center feature section that provides a critical dimension point along a given axis; b) plurality of smaller sections positioned adjacent to the center feature section along the given axis that include a plurality of spaces between each of the plurality of smaller sections; and c) a plurality of displacement lines adjacent to the plurality of the smaller sections to displace a plurality of spaces.

Abstract: Known methods for forming trench storage capacitors require the chemical vapour deposition (CVD) of an undoped silicon oxide layer in order to prevent auto doping of side wall of a semiconductor trench. This layer is deposited once an arsenic doped silicon oxide layer has been disposed and etched to an appropriate depth. Such a technique results in a complex and expensive process. It is therefore proposed to deposit (step 906) the undoped silicon oxide layer 108 in-situ immediately after the arsenic doped silicon oxide layer 106 has been deposited (step 904) and before etching takes place (step 910). It is thus possible to remove the CVD of the undoped silicon oxide, thereby simplifying the overall process and yielding a device having improved performance characteristics.