Abstract: A method and apparatus for providing quadrature biasing for coupled-pair circuits. A QBCP-circuit for quadrature amplifiers provides a new input common-mode sense point that separates the inputs for the differential-and-common mode feedback-control loops. The QBCP circuit biases all four transistors equivalently and reduces the feedback-loop interaction, thereby simplifying the bias control system and improves the voltage-transfer frequency-response performance.

Abstract: Bi-Variant Coupled Pair (BVCP) circuits suitable for use in channel front-end low noise preamplifiers of magnetic storage devices are described. In a magnetic storage device, a BVCP circuit provides a DC bias voltage for a read transducer, low-noise amplification performance, and relatively small AC coupling capacitor values for reducing the cost of an integrated circuit (IC) in which the BVCP circuit may be embodied. The BVCP circuit also has a controllable input impedance for matching a transmission line impedance for high data rate applications.

Abstract: Bi-Variant Coupled Pair (BVCP) circuits suitable for use in channel front-end low noise preamplifiers of magnetic storage devices are described. In a magnetic storage device, a BVCP circuit provides a DC bias voltage for a read transducer, low-noise amplification performance, and relatively small AC coupling capacitor values for reducing the cost of an integrated circuit (IC) in which the BVCP circuit may be embodied. The BVCP circuit also has a controllable input impedance for matching a transmission line impedance for high data rate applications.

Abstract: A method and apparatus for providing quadrature biasing for coupled-pair circuits. A QBCP-circuit for quadrature amplifiers provides a new input common-mode sense point that separates the inputs for the differential-and-common mode feedback-control loops. The QBCP circuit biases all four transistors equivalently and reduces the feedback-loop interaction, thereby simplifying the bias control system and improves the voltage-transfer frequency-response performance.

Abstract: A method and apparatus for high voltage applications, with the latest MOSFET technology having limited terminal-to-terminal voltage capability, includes a switch circuit having at least two serially coupled MOSFETs and a two-stage MOSFET connection using a plurality of resistors, and/or a bipolar transistor, and a plurality of diodes. One of the high voltage applications is a high speed write driver in a computer disk drive. The switch circuit switches on/off between zero volt and a voltage higher than a maximum terminal-to-terminal voltage of a single MOSFET which is typically five volts. A required voltage in high voltage applications can be in excess of, for example, 8 or 9 volts.

Abstract: A method and system for providing a current-sensing preamplifier for use with a magnetoresistive sensor is disclosed. The method includes providing at least one input device coupled with the magnetoresistive sensor, providing a gain stage, and providing a feedback circuit. In a system aspect, the current-sensing preamplifier includes at least one input device. The at least one input device is coupled with the magnetoresistive sensor through an interconnect having a characteristic impedance. The at least one input device provides an input impedance for the current-sensing preamplifier. The current-sensing preamplifier also includes a gain stage coupled with the at least one input device and a feedback circuit coupled with the gain stage and the at least one input device. The feedback circuit provides at least one signal to the at least one input device. The at least one signal controls the input impedance based on at least one error signal.

Abstract: A method and apparatus for high voltage applications, with the latest MOSFET technology having limited terminal-to-terminal voltage capability, includes a switch circuit having at least two serially coupled MOSFETs and a two-stage MOSFET connection using a plurality of resistors, and/or a bipolar transistor, and a plurality of diodes. One of the high voltage applications is a high speed write driver in a computer disk drive. The switch circuit switches on/off between zero volt and a voltage higher than a maximum terminal-to-terminal voltage of a single MOSFET which is typically five volts. A required voltage in high voltage applications can be in excess of, for example, 8 or 9 volts.

Abstract: A multi-state preamplifier having a first detector and a second detector provides voltage-sensing and current-sensing signal amplification, respectively. Either the first detector or the second detector is selected and switched active at any given time, producing an amplified signal representing either the signal voltage developed across the MR element or the signal current flowing through the MR element, respectively. The switching process to activate either the first detector or the second detector is carried out by a detector determining circuit connected to a disk drive control unit. The detector giving the optimum high frequency bandwidth for the preamplifier is chosen based on the resistance of the MR element coupled with the input interconnect network characteristic and parasitic impedances.

Abstract: A method and system for providing a voltage-sensing preamplifier for use with a magnetoresistive sensor is disclosed. The method includes providing a gain stage and providing a control circuit. The system includes the gain stage and the control circuit. The gain stage includes at least one input device that is coupled with the magnetoresistive sensor through an interconnect having a characteristic impedance. The at least one input device has a first input impedance. The control circuit provides at least one signal to the at least one input device. The at least one signal controls the first input impedance of the at least one input device to control a second input impedance of the voltage-sensing preamplifier, such that the preamplifier input impedance is modified toward the characteristic impedance of the interconnect to improve the bandwidth of the signal amplified by the system.

Abstract: The present invention is a preampifier circuit for magnetoresistive (MR) elements which has a high imput impedance with respect to the MR resistance so that the resultant system would not be sensitive to the series input inductance of the leads necessary to connect the MR element with the preamplifier. With former preamplifiers, nearly all are low impedance types, (using either BiCMOS or BiPolar technology), or differential (using BiPolar technology). The present invention fills a need in the prior art by providing a preamplifier curcuit using BiCMOS technology with a high input impedance, and single ended (SE) topology for minimum power dissipation.

Abstract: A method and apparatus for re-initializing a GMR head after losing initialization is disclosed. The invention may use a voltage controlled waveform, which allows the current to vary with the resistance of the GMR head. Furthermore, according to a further aspect of the invention a stack of GMR heads may be reinitialized having the same orientation to preclude inversion of the reset magnetic fields on half of the heads. In addition, improvements in re-initializing GMR heads is provided by implementing wave shaping. The invention can also provide re-initialization of GMR heads at different points in the manufacturing process.

Abstract: An FET write driver providing high rates of data transfer to a magnetic storage medium by effectively utilizing the voltage swing provided by supply voltage. A first and a second p-channel FET power switch are coupled between the voltage supply and the inductive head, each having a high aspect ratio for low resistance. A first and a second current mirror are coupled at their inputs to the inductive head and a current source, each current mirror having a reference arm coupled to the current source and a mirror arm coupled to the inductive head. Each current mirror has an output coupled respectively to a first and a second mirror enabling FET switch, each having a high aspect ratio for low resistance.