Abstract: To compensate for leakage current resulting from parasitic resistance, an integrated circuit device includes a boosting current pump to continuously boost the input of an NMOS output circuit so long as the output circuit is providing a logic high output signal. The NMOS output circuit has an input for receiving an input signal and an output for driving at least one output signal line. An oscillation circuit provides an oscillating digital signal to the boosting current pump. The pump responds to the oscillating digital signal and to the input signal being in one of two predetermined states to provide additional current at the input of the NMOS output circuit to compensate for the leakage current.

Abstract: An integrated circuit memory device has two banks of NAND structured memory cells and a clock input for synchronously latching control, address and data signals. Time delays of sequentially accessing and restoring memory bits in the NAND structure are masked through the use of the dual bank architecture and synchronous timing. The NAND structured memory cells provide an extremely dense memory array for a high capacity memory device. The input clock signal driving a synchronous word line generator provides a simplified high speed access to the array. A set of random access storage registers temporarily store data from the array and provide high speed page access to an entire page of data from each bank of the memory. The ability to access one bank while simultaneously opening or closing a row in the other bank allows for an unlimited number of high speed sequential data accesses.