Patents by Inventor Pawan Rawat

Pawan Rawat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to minimize iso-dense contact or via gap filling variation of polymeric materials in the spin coat process
    Patent number: 6849293
    Abstract: A method for spin coating a polymeric material film upon a wafer rotatably mounted within a spin coater; the wafer having a surface, including the following steps. A first step of rotating the wafer on an axis perpendicular to the wafer surface while applying a predetermined amount of polymeric material while rotating the wafer at a rotational speed of from about 300 to 1200 rpm for from about 2.5 to 5 seconds to spread the polymeric material on the whole surface of the wafer. A second step of increasing the rotational speed of the wafer to about 5500 rpm for about 2.5 seconds. A third step of decreasing the rotational speed of the wafer to about 300 to 1200 rpm for about 2.5 seconds. A fourth step of increasing the rotational speed of the wafer to about 5500 rpm for about 20 seconds to form the polymeric material film having a predetermined thickness over the whole surface of the wafer.
    Type: Grant
    Filed: May 2, 2002
    Date of Patent: February 1, 2005
    Assignee: Institute of Microelectronics
    Inventor: Pawan Rawat
  • Novel method to minimize iso-dense contact or via gap filling variation of polymeric materials in the spin coat process
    Publication number: 20030207029
    Abstract: A method for spin coating a polymeric material film upon a wafer rotatably mounted within a spin coater; the wafer having a surface, including the following steps. A first step of rotating the wafer on an axis perpendicular to the wafer surface while applying a predetermined amount of polymeric material while rotating the wafer at a rotational speed of from about 300 to 1200 rpm for from about 2.5 to 5 seconds to spread the polymeric material on the whole surface of the wafer. A second step of increasing the rotational speed of the wafer to about 5500 rpm for about 2.5 seconds. A third step of decreasing the rotational speed of the wafer to about 300 to 1200 rpm for about 2.5 seconds. A fourth step of increasing the rotational speed of the wafer to about 5500 rpm for about 20 seconds to form the polymeric material film having a predetermined thickness over the whole surface of the wafer.
    Type: Application
    Filed: May 2, 2002
    Publication date: November 6, 2003
    Applicant: Institute of Microelectronics
    Inventor: Pawan Rawat