Abstract: Systems, methods, circuits, and devices for providing and using transistors in a physically unclonable function (PUF) circuit. The transistors comprise a split source drain configuration including one or more inflection segments that increase process variations between the transistors such that each transistor generates a unique output signal.

Abstract: A sun tracking canopy structure having a canopy positionable to maintain a shaded area based on calculated solar elevation and azimuth.

Abstract: A spectral sensor and a method for forming the spectral sensor is disclosed. The spectral sensor includes a planar waveguide on a substrate; a restriction mechanism that restricts a range of angles of incidence of light impinging onto the chirped input coupling grating; the chirped input grating formed to couple incident light into the planar waveguide, wherein the chirped input coupling grating comprises a first transverse chirp to provide a spectrally selective coupling of incident light Into the planar waveguide; a propagation region to filter out light that is not coupled into the planar waveguide; a detector array arranged on the opposite side of the propagation region from the chirped input coupling S grating to receive light coupled out of the planar waveguide and produce output signals representative of the light; and an electrical circuit to readout output signals from the detector array.

Abstract: An occupancy sensor covering a wide field in an integrated chip is disclosed. The occupancy sensor includes an array of grating coupled waveguide sensors wherein continuous wave (cw) signals monitor an ambient light field for dynamic changes on times scales of seconds, and high frequency signals map in three-dimensions of the space using time-of-flight (TOF) measurements, pixel level electronics that perform signal processing; array level electronics that perform additional signal processing; and communications and site level electronics that interface with actuators to respond to occupancy sensing.

Abstract: An angular sensitive time-of-flight position sensor device is provided and includes an array of pixels each comprising: a planar waveguide structure; a collection area with a grating pattern at a specific periodicity to couple incident light into the planar waveguide structure; at least one detector placed outside of the collection area and in a plane different from that of the planar waveguide structure; an output coupler to direct the light from planar waveguide to the at least one detector; a mask to shield the at least one detector from direct illumination; a narrow band light source that illuminates a field-of-view; a first electronics configured to detect the time-of-flight of light retroreflected, scattered, or both incident onto the position sensor and configured to provide distance ranging information; and a second electronics configured to interpret and retain time-of-flight information and configured to communicate with external electronics for system applications.

Abstract: Provided is a spectral sensor array, including: a planar waveguide on a substrate; a chirped input coupling grating, wherein the chirped input coupling grating comprises a transverse chirp to provide a spectrally selective coupling of incident light into the planar waveguide; an output coupling grating; and an array of photodetectors arranged to receive the light coupled out of the waveguide.

Abstract: A sun tracking canopy structure having a canopy positionable to maintain a shaded area based on calculated solar elevation and azimuth.

Abstract: An occupancy sensor covering a wide field in an integrated chip is disclosed. The occupancy sensor includes an array of grating coupled waveguide sensors wherein continuous wave (cw) signals monitor an ambient light field for dynamic changes on times scales of seconds, and high frequency signals map in three-dimensions of the space using time-of-flight (TOF) measurements, pixel level electronics that perform signal processing; array level electronics that perform additional signal processing; and communications and site level electronics that interface with actuators to respond to occupancy sensing.

Abstract: Devices that include a substrate; a source region and a drain region formed within the substrate and having a channel region provided therebetween; a first insulating layer formed over the channel region; a first floating gate formed over the first insulating layer, the first floating gate configured to respond to an analyte in a target material; and a second gate formed over the first floating gate, the second gate capacatively coupled but not electrically connected to the first floating gate.

Abstract: A 2-D sensor array includes a semiconductor substrate and a plurality of pixels disposed on the semiconductor substrate. Each pixel includes a coupling region and a junction region, and a slab waveguide structure disposed on the semiconductor substrate and extending from the coupling region to the region. The slab waveguide includes a confinement layer disposed between a first cladding layer and a second cladding layer. The first cladding and the second cladding each have a refractive index that is lower than a refractive index of the confinement layer. Each pixel also includes a coupling structure disposed in the coupling region and within the slab waveguide. The coupling structure includes two materials having different indices of refraction arranged as a grating defined by a grating period. The junction region comprises a p-n junction in communication with electrical contacts for biasing and collection of carriers resulting from absorption of incident radiation.

Abstract: Systems and methods implementing a resonance circuit, including an avalanche photodiode, in which a resonance frequency of the resonance circuit is matched with the frequency of a dynamic biasing signal of the avalanche photodiode, can be used in a variety of applications. In various embodiments, a method for blocking and/or compensating current injection associated with the parasitic capacitance of APDs operated under dynamic biasing may be substantially realized by the matching of the resonance frequency of a resonance circuit including the avalanche photodiode with the frequency of an applied dynamic biasing signal. Additional systems and methods are described that can be used in a variety of applications.

Abstract: Provided is a spectral sensor array, including: a planar waveguide on a substrate; a chirped input coupling grating, wherein the chirped input coupling grating comprises a transverse chirp to provide a spectrally selective coupling of incident light into the planar waveguide; an output coupling grating; and an array of photodetectors arranged to receive the light coupled out of the waveguide.

Abstract: A 2-D sensor array includes a semiconductor substrate and a plurality of pixels disposed on the semiconductor substrate. Each pixel includes a coupling region and a junction region, and a slab waveguide structure disposed on the semiconductor substrate and extending from the coupling region to the region. The slab waveguide includes a confinement layer disposed between a first cladding layer and a second cladding layer. The first cladding and the second cladding each have a refractive index that is lower than a refractive index of the confinement layer. Each pixel also includes a coupling structure disposed in the coupling region and within the slab waveguide. The coupling structure includes two materials having different indices of refraction arranged as a grating defined by a grating period. The junction region comprises a p-n junction in communication with electrical contacts for biasing and collection of carriers resulting from absorption of incident radiation.

Abstract: A 2-D sensor array includes a semiconductor substrate and a plurality of pixels disposed on the semiconductor substrate. Each pixel includes a coupling region and a junction region, and a slab waveguide structure disposed on the semiconductor substrate and extending from the coupling region to the region. The slab waveguide includes a confinement layer disposed between a first cladding layer and a second cladding layer. The first cladding and the second cladding each have a refractive index that is lower than a refractive index of the confinement layer. Each pixel also includes a coupling structure disposed in the coupling region and within the slab waveguide. The coupling structure includes two materials having different indices of refraction arranged as a grating defined by a grating period. The junction region comprises a p-n junction in communication with electrical contacts for biasing and collection of carriers resulting from absorption of incident radiation.

Abstract: A detector or sensor including a transistor having a sensor element that generates a current when exposed to a stimulus such as light or a chemical, in one implementation, the sensor element is positioned between a transistor gate and a transistor channel. When the sensor element is not being exposed to the stimulus, the transistor outputs a first voltage on a transistor drain contact when the transistor inverts. When the sensor element is being exposed to the stimulus, the transistor outputs a second voltage on the transistor drain contact when the transistor inverts, where the second voltage is higher than the first voltage.

Abstract: Systems and methods implementing a resonance circuit, including an avalanche photodiode, in which a resonance frequency of the resonance circuit is matched with the frequency of a dynamic biasing signal of the avalanche photodiode, can be used in a variety of applications. In various embodiments, a method for blocking and/or compensating current injection associated with the parasitic capacitance of APDs operated under dynamic biasing may be substantially realized by the matching of the resonance frequency of a resonance circuit including the avalanche photodiode with the frequency of an applied dynamic biasing signal. Additional systems and methods are described that can be used in a variety of applications.

Abstract: This disclosure describes, in one aspect, a method of electric-field-assisted nucleotide sequencing. Generally, the method includes performing an ion-sensitive nucleotide sequencing method, applying an electric field across the device while the nucleotide sequencing reactions are being performed so that ions released by the sequencing reactions are directed to contact with the ion-sensitive detector, and detecting at least a portion of the released ions in contact with the ion-sensitive detector.

Abstract: Systems and methods implementing a resonance circuit, including an avalanche photodiode, in which a resonance frequency of the resonance circuit is matched with the frequency of a dynamic biasing signal of the avalanche photodiode, can be used in a variety of applications. In various embodiments, a method for blocking and/or compensating current injection associated with the parasitic capacitance of APDs operated under dynamic biasing may be substantially realized by the matching of the resonance frequency of a resonance circuit including the avalanche photodiode with the frequency of an applied dynamic biasing signal. Additional systems and methods are described that can be used in a variety of applications.

Abstract: Method and apparatus for maximizing the output of a dynamically biased avalanche photodiode (APD). The output of the APD is amplified. A feedback loop comprising a phase shifter measures the RF power of the amplified output and adjusts the phase of the AC signal which is used to dynamically bias the APD until the output power is maximized. The AC signal is also split into out of phase signals, thereby substantially canceling out the bias current injected into the APD output, leaving only the desired amplified optical output signal. The monitoring and tuning of the AC dynamic bias can eliminate phase drift over time, as well as other non-ideal effects that can occur, such as those due to temperature changes or device aging effects.

Abstract: A 2-D sensor array includes a semiconductor substrate and a plurality of pixels disposed on the semiconductor substrate. Each pixel includes a coupling region and a junction region, and a slab waveguide structure disposed on the semiconductor substrate and extending from the coupling region to the region. The slab waveguide includes a confinement layer disposed between a first cladding layer and a second cladding layer. The first cladding and the second cladding each have a refractive index that is lower than a refractive index of the confinement layer. Each pixel also includes a coupling structure disposed in the coupling region and within the slab waveguide. The coupling structure includes two materials having different indices of refraction arranged as a grating defined by a grating period. The junction region comprises a p-n junction in communication with electrical contacts for biasing and collection of carriers resulting from absorption of incident radiation.