Patents by Inventor Peder Bergman

Peder Bergman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Homoepitaxial growth of SiC on low off-axis SiC wafers
    Patent number: 8492772
    Abstract: A wafer including a SiC substrate having a surface that is inclined relative to a (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree, a SiC homoepitaxial device layer, and a SiC homoepitaxial boundary layer having a thickness up to 1 ?m arranged between the substrate and the device layer. The boundary layer has been grown on the substrate under an atmosphere of lower supersaturation than when forming the device layer and at a C/Si ratio above 1.
    Type: Grant
    Filed: March 12, 2009
    Date of Patent: July 23, 2013
    Assignee: Norstel AB
    Inventors: Alexandre Ellison, Christer Hallin, Björn Magnusson, Peder Bergman
  • HOMOEPITAXIAL GROWTH OF SIC ON LOW OFF-AXIS SIC WAFERS
    Publication number: 20090230406
    Abstract: A wafer including a SiC substrate having a surface that is inclined relative to a (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree, a SiC homoepitaxial device layer, and a SiC homoepitaxial boundary layer having a thickness up to 1 ?m arranged between the substrate and the device layer. The boundary layer has been grown on the substrate under an atmosphere of lower supersaturation than when forming the device layer and at a C/Si ratio above 1.
    Type: Application
    Filed: March 12, 2009
    Publication date: September 17, 2009
    Applicant: NORSTEL AB
    Inventors: Alexandre Ellison, Christer Hallin, Bjorn Magnusson, Peder Bergman
  • Homoepitaxial growth of SiC on low off-axis SiC wafers
    Patent number: 7531433
    Abstract: A method for producing, on an SiC substrate, SiC homoepitaxial layers of the same polytype as the substrate. The layers are grown on a surface of the SiC substrate, wherein the surface is inclined relative to the (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree. An homoepitaxial growth is started by forming a boundary layer with a thickness up to 1 ?m.
    Type: Grant
    Filed: July 14, 2005
    Date of Patent: May 12, 2009
    Assignee: Norstel AB
    Inventors: Alexandre Ellison, Christer Hallin, Björn Magnusson, Peder Bergman
  • Homoepitaxial growth of SiC on low off-axis SiC wafers
    Publication number: 20060011128
    Abstract: A method for producing, on an SiC substrate, SiC homoepitaxial layers of the same polytype as the substrate. The layers are grown on a surface of the SiC substrate, wherein the surface is inclined relative to the (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree. An homoepitaxial growth is started by forming a boundary layer with a thickness up to 1 ?m.
    Type: Application
    Filed: July 14, 2005
    Publication date: January 19, 2006
    Applicant: NORSTEL AB
    Inventors: Alexandre Ellison, Christer Hallin, Bjorn Magnusson, Peder Bergman