Abstract: Off-chip driver (OCD) NMOS transistors with ESD protection are formed by interposing an P-ESD implant between the N+ drain regions of OCD NMOS transistors and the N-well such that the P-ESD surrounds a section of the N-well. The P-ESD implant is dosed less than the N+ source/drain implants but higher than the N-well dose. In another embodiment, N-well doping is used along with P-ESD doping, where the P-ESD doping is chosen such that it counterdopes the N-well underneath the N+ drains. The N-well, however, still maintains electrical connection to the N+ drains. This procedure creates a larger surface under the area where the junction breakdown occurs and an increased radius of curvature of the junction. The P-ESD implant is covered by N-type on three sides creating better parasitic bipolar transistor characteristics.

Abstract: An embodiment is a Electro Static Discharge (ESD) protection device comprising: a n-doped region and a p-doped region in a p-well in a semiconductor structure. The n-doped region and the p-doped region are spaced. A n-well and a deep n-well surrounding the p-well on the sides and bottom. A first I/O pad connected to the n-doped region. A trigger circuit connected the first I/O pad and the p-doped region. A second I/O pad connected to the n-well. A parasitic bipolar transistor is comprised of the n-doped region that functions as a collector terminal, the P-well that functions as a base terminal, and the deep N-well that functions as the emitter terminal. Whereby under an ESD condition, the p-well is charged positive using the trigger circuit and the parasitic bipolar transistor can be turned on.

Abstract: Off-chip driver (OCD) NMOS transistors with ESD protection are formed by interposing an P-ESD implant between the N+ drain regions of OCD NMOS transistors and the N-well such that the P-ESD surrounds a section of the N-well. The P-ESD implant is dosed less than the N+ source/drain implants but higher than the N-well dose. In another embodiment, N-well doping is used along with P-ESD doping, where the P-ESD doping is chosen such that it counterdopes the N-well underneath the N+ drains. The N-well, however, still maintains electrical connection to the N+ drains. This procedure creates a larger surface under the area where the junction breakdown occurs and an increased radius of curvature of the junction. The P-ESD implant is covered by N-type on three sides creating better parasitic bipolar transistor characteristics.

Abstract: A new method to form an integrated circuit device is achieved. The method comprises forming a dielectric layer overlying a semiconductor substrate. An intrinsic semiconductor layer is formed overlying the dielectric layer. The intrinsic semiconductor layer is patterned. A p+ region is formed in the intrinsic semiconductor layer. An n+ region is formed in the intrinsic semiconductor layer. The p+ region and said n+ region are laterally separated by an intrinsic region to thereby form a PIN diode device. A source region and a drain region are formed in the semiconductor substrate to thereby complete a MOSFET device. The PIN diode device is a gate electrode for the MOSFET device.