Abstract: A process for ion milling using photoresist as a mask is described. In a preferred embodiment the invention is used in the fabricating air-bearing features on sliders for use in magnetic storage devices. According to the invention the photoresist (liquid or dry) is applied, developed and removed as in the prior art which includes baking steps. The embodiment of the invention includes an additional baking step beyond whatever baking steps are used in the photolithography process. The additional baking step is preferably performed immediately prior to ion milling. The additional baking step according to the invention yields increased uniformity of the depth of the ion milling which is believed to result from reduction of volatile material such as water in the photoresist. When the invention is used as part of the manufacturing process for ion milling the air-bearing features on a slider, the features are more uniform which improves the overall quality and performance.

Abstract: A process for ion milling using photoresist as a mask is described. In a preferred embodiment the invention is used in the fabricating air-bearing features on sliders for use in magnetic storage devices. According to the invention the photoresist (liquid or dry) is applied, developed and removed as in the prior art which includes baking steps. The embodiment of the invention includes an additional baking step beyond whatever baking steps are used in the photolithography process. The additional baking step is preferably performed immediately prior to ion milling. The additional baking step according to the invention yields increased uniformity of the depth of the ion milling which is believed to result from reduction of volatile material such as water in the photoresist. When the invention is used as part of the manufacturing process for ion milling the air-bearing features on a slider, the features are more uniform which improves the overall quality and performance.

Abstract: A silicon coating on an air bearing surface for magnetic thin film heads. A thick silicon layer is provided to replace metallic layers such as TiW as an overcoat for thin film heads. The silicon layer will provide a durable head-disk interface and act as a reflective surface for fly height measurement. The silicon layer can be planarized with the pole tips to avoid any magnetic spacing loss. The thickness of the silicon coating is preferably between 125 and 6500 angstroms thick. The slider body may be fabricated from silicon such that the silicon coating is substantially identical to the silicon slider body, thereby preventing thermal mismatch therebetween. The silicon coating is preferably applied using a magnetron sputtering technique which provides a high rate of deposition of silicon to form a dense, low stress silicon layer.

Abstract: A method for modifying a substrate surface, including the step of applying a high density plasma to the substrate surface in the presence of a hydrofluorocarbon gas and a carrier gas to form an antiwetting layer on the substrate surface. Optionally, the method including a cleaning step of contacting the slider surface with a carrier gas for a period of time effective to clean the surface.

Abstract: A silicon coating on an air bearing surface for magnetic thin film heads. A thick silicon layer is provided to replace metallic layers such as TiW as an overcoat for thin film heads. The silicon layer will provide a durable head-disk interface and act as a reflective surface for fly height measurement. The silicon layer can be planarized with the pole tips to avoid any magnetic spacing loss. The thickness of the silicon coating is preferably between 125 and 6500 Angstroms thick. The slider body may be fabricated from silicon such that the silicon coating is substantially identical to the silicon slider body, thereby preventing thermal mismatch therebetween. The silicon coating is preferably applied using a magnetron sputtering technique which provides a high rate of deposition of silicon to form a dense, low stress silicon layer.

Abstract: A single layer wear coating is provided for a magnetic head assembly. The single layer is silicon or silicon-based material with a thickness in the range of 30-75 .ANG.. The single layer may be formed by a single step of deposition employing a DC magnetron. The single layer wear coating improves the wear performance of the magnetic head assembly and protects one or more sensitive elements of a magnetic head without significant reduction of spacing loss.

Abstract: A method is provided for applying an overcoat to a slider and sensitive elements of a magnetic head which has improved coverage, reduced spacing loss and improved corrosion resistance. After lapping, an overcoat material is sputter deposited on the air bearing surface (ABS) of the slider, followed by a step of sputter etching the overcoat. The sputter etching redeposits material from high points on the slider and fills in trenches formed during the lapping process. The redeposition of the overcoat from the high places to the low places of the slider decreases the overall thickness of the overcoat, thereby decreasing spacing loss. The filling of the trenches implements increased coverage which increases wear resistance of the slider and more adequately protects the sensitive elements of the magnetic head from corrosion. In a preferred embodiment, a portion of the overcoat is left on the high places to ensure that the sputter etching does not damage the sensitive elements of the magnetic head.

Abstract: A single layer wear coating is provided for a magnetic head assembly. The single layer is silicon or silicon-based material with a thickness in the range of 30-75 .ANG.. The single layer may be formed by a single step of deposition employing a DC magnetron. The single layer wear coating improves the wear performance of the magnetic head assembly and protects one or more sensitive elements of a magnetic head without significant reduction of spacing loss.

Abstract: A method for vapor phase depositing a thin seed layer of, for example, chromium and copper onto the side walls of through holes in thin film substrates of, for example, polyimide is disclosed. This method is useful in fabricating devices such as a thin film semiconductor chip carrier in which a semiconductor chip mounted on one major surface of the chip carrier is electrically connected to a ground plane and/or a power conductor on the other major surface of the chip carrier via one or more metallized through holes.

Abstract: The adhesion of chromium-copper layer to polyimide has been greatly improved by a method which provides controlled reduction, rather than total elimination, of water content in the polyimide. The electronic packaging device which incorporates the flexible circuit prepared by the method exhibits greatly improved reliability. It is believed that the invention can be used to improve the adhesion between other organic materials having moisture affinity and materials comprising in-organics or between two organic materials.

Abstract: An improved method of laminating a metal foil or sheet to a polyimide material is provided. A solution of a precursor of an intractable (i.e. thermosetting) polyimide is applied to a substrate and the solvent is removed to form a dry tack-free film. Thereafter, a solution of a precursor of a thermoplastic polyimide is applied onto the first film of polyimide and the solvent is removed to form a dry tack-free second film. Both films are then cured concomitantly at a sufficiently rapid rate and low temperature to effect substantial imidization of the polyimide precursors of both films without substantial crosslinking or densification of the polyimides in either of the films. Thereafter, a metal sheet or foil is laminated onto the thermoplastic polyimide film according to the following process. The thermoplastic film is contacted with the sheet or foil of metal to be laminated thereto.

Abstract: A method for vapor phase depositing a thin seed layer of, for example, chromium and copper onto the side walls of through holes in thin film substrates of, for example, polyimide is disclosed. This method is useful in fabricating devices such as a thin film semiconductor chip carrier in which a semiconductor chip mounted on one major surface of the chip carrier is electrically connected to a ground plane and/or a power conductor on the other major surface of the chip carrier via one or more metallized through holes.

Abstract: An improved method of laminating a metal foil or sheet to a polyimide material is provided. A solution of a precursor of an intractable (i.e. thermosetting) polyimide is applied to a substrate and the solvent is removed to form a dry tack-free film. Thereafter, a solution of a precursor of a thermoplastic polyimide is applied onto the first film of polyimide and the solvent is removed to form a dry tack-free second film. Both films are then cured concomitantly at a sufficiently rapid rate and low temperature to effect substantial imidization of the polyimide precursors of both films without substantial crosslinking or densification of the polyimides in either of the films. Thereafter, a metal sheet or foil is laminated onto the thermoplastic polyimide film according to the following process. The thermoplastic film is contacted with the sheet or foil of metal to be laminated thereto.

Abstract: Disclosed is a method of fabricating a microelectronic package having least one layer formed of a copper surface core, e.g., a copper-Invar-copper core, with a polymeric dielectric film. The method includes removing copper oxide from the copper surface of the metallic core or layer. After this step an adhesion layer, such as a chromium layer, a nickel layer, or chromium and nickel or chromium and copper bilayers, is sputter deposited onto the copper surface of metallic core or layer. A polymeric dielectric film is then applied atop the metallic adhesion layer.