Abstract: Fabricating a photomask includes forming a protection layer over a substrate. A plurality of multilayers of reflecting films are formed over the protection layer. A capping layer is formed over the plurality of multilayers. An absorption layer is formed over capping layer. A first photoresist layer is formed over portions of absorption layer. Portions of the first photoresist layer and absorption layer are patterned, forming first openings in absorption layer. The first openings expose portions of the capping layer. Remaining portions of first photoresist layer are removed and a second photoresist layer is formed over portions of absorption layer. The second photoresist layer covers at least the first openings. Portions of the absorption layer and capping layer and plurality of multilayer of reflecting films not covered by the second photoresist layer are patterned, forming second openings. The second openings expose portions of protection layer and second photoresist layer is removed.

Abstract: A semiconductor device having an improved source/drain region profile and a method for forming the same are disclosed. In an embodiment, a method includes etching one or more semiconductor fins to form one or more recesses; and forming a source/drain region in the one ore more recesses, the forming the source/drain region including epitaxially growing a first semiconductor material in the one or more recesses at a temperature of 600° C. to 800° C., the first semiconductor material including doped silicon germanium; and conformally depositing a second semiconductor material over the first semiconductor material at a temperature of 300° C. to 600° C., the second semiconductor material including doped silicon germanium and having a different composition than the first semiconductor material.

Abstract: A method includes forming a multi-layered reflective layer over a substrate; depositing a metal capping layer over the multi-layered reflective layer; depositing a first metal oxide layer over the metal capping layer; depositing a metal nitride layer over the first metal oxide layer; depositing a second metal oxide layer over the metal nitride layer; forming a plurality of features on the second metal oxide layer and the metal nitride layer.

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.

Abstract: A facial beautifying and care apparatus includes a beauty bar (1) having an air supply passage (A), a negative pressure connecting hole (132), a conductive suction nozzle (15) and a first connection port (134); an EMS generation module (20) inside the beauty bar (1) electrically connected to the first connection port (134); an external negative pressure unit (6) separated from the beauty bar (1) and having a negative pressure driving control module (62) and a second connection port (637); the negative pressure driving control module (62) having an air supply tube assembly (66) with a negative pressure communicating hole (661); a communicating tube (7) communicating with the negative pressure connecting hole (132) and the negative pressure communicating hole (661); a conductive wire (8) connected to the first connecting port (134) and the second connecting port (637). Accordingly, the effects of facial skin firming, cleaning, beautifying and caring are achieved.

Abstract: The present disclosure describes a method of patterning a semiconductor wafer using extreme ultraviolet lithography (EUVL). The method includes receiving an EUVL mask that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further includes patterning the absorber layer to form a trench on the EUVL mask, wherein the trench has a first width above a target width. The method further includes treating the EUVL mask with oxygen plasma to reduce the trench to a second width, wherein the second width is below the target width. The method may also include treating the EUVL mask with nitrogen plasma to protect the capping layer, wherein the treating of the EUVL mask with the nitrogen plasma expands the trench to a third width at the target width.

Abstract: A system includes a mask. The system further includes a pellicle frame attached to the mask. The pellicle frame includes a check valve, wherein the check valve is configured to permit gas flow from a first side of the pellicle from to a second side of the pellicle frame. The pellicle frame further includes a flat bottom surface having only a single recess therein, wherein the flat bottom surface is free of an adhesive. The system further includes a gasket within the single recess.

Abstract: A pellicle for an extreme ultraviolet (EUV) photomask includes a pellicle frame and a main membrane attached to the pellicle frame. The main membrane includes a plurality of nanotubes, and each of the plurality of nanotubes is covered by a coating layer containing Si and one or more metal elements.

Abstract: In a method of cleaning a photo mask, the photo mask is placed on a support such that a pattered surface faces down, and an adhesive sheet is applied to edges of a backside surface of the photo mask.

Abstract: A method includes forming a test pattern and a reference pattern in an absorption layer of a photomask structure. The test pattern has a first trench and a second trench, the reference pattern has a third trench and a fourth trench, the test pattern and the reference pattern have substantially the same dimension in a top view, and the second trench is deeper than the first trench, the third trench, and the fourth trench. The method further includes emitting a light beam to the test pattern to obtain a first interference pattern reflected from the test pattern, emitting the light beam to the reference pattern to obtain a second interference pattern reflected from the reference pattern; and comparing the first interference pattern with the second interference pattern to obtain a measured complex refractive index of the absorption layer.

Abstract: In a method of manufacturing a pellicle for an extreme ultraviolet (EUV) photomask, a nanotube layer including a plurality of carbon nanotubes is formed, the nanotube layer is attached to a pellicle frame, and a solvent dipping treatment is performed to the nanotube layer by applying bubbles in a solvent to the nanotube layer.

Abstract: One embodiment of safety apparatus for a lithium ion battery module comprises a health monitoring component configured to detect degradation of a battery cell within the lithium ion battery module and transmit an output signal; and a safety protection component configured to receive the output signal and at least disable operation of the lithium ion battery module.

Abstract: One embodiment of safety apparatus for a lithium ion battery module comprises a health monitoring component configured to detect degradation of a battery cell within the lithium ion battery module and transmit an output signal; and a safety protection component configured to receive the output signal and at least disable operation of the lithium ion battery module.

Abstract: A method of increasing efficiency of video display includes receiving a first frame signal, where the first frame signal includes a first blank signal and a first image data, where the first blank signal includes a first sync signal, a first front-porch signal and a first back-porch signal. The method also includes separating the first blank signal and the first image data, performing image processing for the first image data for generating a second image data, and adding a second blank signal to the second image data for generating a second frame signal, where the second blank signal includes a second sync signal, a second front-porch signal and a second back-porch signal.

Abstract: A brightness adjustment method is applied to a display apparatus comprising a light source and a light sensor and includes the following steps. First, a target brightness value L1 is provided. Then, a detected value S2 of the light sensor is obtained by using the light sensor to detect brightness of the light source. Next, a detected brightness value L2 of the light source is obtained as the light sensor performs the detection. At last, the brightness of the light source is adjusted according to L1, L2 and S2.

Abstract: A method of increasing efficiency of video display includes receiving a first frame signal, where the first frame signal includes a first blank signal and a first image data, where the first blank signal includes a first sync signal, a first front-porch signal and a first back-porch signal. The method also includes separating the first blank signal and the first image data, performing image processing for the first image data for generating a second image data, and adding a second blank signal to the second image data for generating a second frame signal, where the second blank signal includes a second sync signal, a second front-porch signal and a second back-porch signal.