Patents by Inventor Pei-Hsuan Chang

Pei-Hsuan Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240087961
    Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hung-Ju CHOU, Chih-Chung Chang, Jun-Ming Kuo, Che-Yuan Hsu, Pei-Ling Kao, Chen-Hsuan Liao
  • Patent number: 11923250
    Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.
    Type: Grant
    Filed: July 28, 2022
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hung-Ju Chou, Chih-Chung Chang, Jiun-Ming Kuo, Che-Yuan Hsu, Pei-Ling Gao, Chen-Hsuan Liao
  • Patent number: 10688343
    Abstract: A measuring method for maximum muscle strength may be applied to a muscle training device and a user of the device. The muscle training device may include a control unit, an operation display unit, and a drag unit. The measuring method assists the user to measure their maximum strength on the muscle training device by themself, and this knowledge is helpful in designing and adjusting a muscle training schedule and to evaluate the resulting progress.
    Type: Grant
    Filed: October 13, 2017
    Date of Patent: June 23, 2020
    Assignee: Strength Master Fitness Tech. Co., Ltd.
    Inventors: Ming-Chu Su, Shu-Yao Wu, Pei-Hsuan Chang
  • Publication number: 20190111316
    Abstract: A measuring method for maximum muscle strength may be applied to a muscle training device and a user of the device. The muscle training device may include a control unit, an operation display unit, and a drag unit. The measuring method assists the user to measure their maximum strength on the muscle training device by themself, and this knowledge is helpful in designing and adjusting a muscle training schedule and to evaluate the resulting progress.
    Type: Application
    Filed: October 13, 2017
    Publication date: April 18, 2019
    Inventors: Ming-Chu Su, Shu-Yao Wu, Pei-Hsuan Chang
  • Patent number: D587105
    Type: Grant
    Filed: May 15, 2008
    Date of Patent: February 24, 2009
    Assignee: Nifco Taiwan Corporation
    Inventor: Pei-Hsuan Chang