Abstract: Embodiments herein describe techniques for a semiconductor device including a substrate, a first inter-level dielectric (ILD) layer above the substrate, and a second ILD layer above the first ILD layer. A first capacitor and a second capacitor are formed within the first ILD layer and the second ILD layer. A first top plate of the first capacitor and a second top plate of the second capacitor are formed at a boundary between the first ILD layer and the second ILD layer. The first capacitor and the second capacitor are separated by a dielectric area in the first ILD layer. The dielectric area includes a first dielectric area that is coplanar with the first top plate or the second top plate, and a second dielectric area above the first dielectric area and to separate the first top plate and the second top plate. Other embodiments may be described and/or claimed.

Abstract: A method and device for detecting urea are provided. The method for detecting urea includes the following steps. A derivatization reagent reacts with a sample to obtain a mixture, wherein a reaction time period for reacting urea in the sample with the derivatization reagent to form a derivative product is controlled. The derivative product is separated from the mixture. The amount of separated derivative product is analyzed to determine the concentration of urea in the sample.

Abstract: A headband device is provided. The headband device includes a first knob, a first transmission mechanism, a vertical adjustment mechanism and a vertical headband. The first knob is rotated around a first axis. The first transmission mechanism is connected to the first knob, wherein the first transmission mechanism is rotated by the first knob around a second axis, wherein the first axis is perpendicular to the second axis. The vertical adjustment mechanism is adapted to be connected to the first transmission mechanism, wherein the vertical adjustment mechanism is rotated by the first transmission mechanism and is rotated around the second axis. The vertical headband is connected to the vertical adjustment mechanism, wherein the vertical headband is moved by the vertical adjustment mechanism and the tightness of the vertical headband is adjustable.